JP2007242697A - 撮像装置および撮像システム - Google Patents

撮像装置および撮像システム Download PDF

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Publication number
JP2007242697A
JP2007242697A JP2006059589A JP2006059589A JP2007242697A JP 2007242697 A JP2007242697 A JP 2007242697A JP 2006059589 A JP2006059589 A JP 2006059589A JP 2006059589 A JP2006059589 A JP 2006059589A JP 2007242697 A JP2007242697 A JP 2007242697A
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JP
Japan
Prior art keywords
film
insulating layer
disposed
protective layer
antireflection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006059589A
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English (en)
Japanese (ja)
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JP2007242697A5 (enExample
Inventor
Akira Okita
彰 沖田
Takumi Hiyama
拓己 樋山
Ryuichi Mishima
隆一 三島
Asako Ura
朝子 浦
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006059589A priority Critical patent/JP2007242697A/ja
Priority to US11/680,742 priority patent/US20070205439A1/en
Priority to CN2010105207791A priority patent/CN101976674B/zh
Priority to CN2007100856958A priority patent/CN101034712B/zh
Publication of JP2007242697A publication Critical patent/JP2007242697A/ja
Publication of JP2007242697A5 publication Critical patent/JP2007242697A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2006059589A 2006-03-06 2006-03-06 撮像装置および撮像システム Pending JP2007242697A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006059589A JP2007242697A (ja) 2006-03-06 2006-03-06 撮像装置および撮像システム
US11/680,742 US20070205439A1 (en) 2006-03-06 2007-03-01 Image pickup apparatus and image pickup system
CN2010105207791A CN101976674B (zh) 2006-03-06 2007-03-06 图像拾取装置和图像拾取系统
CN2007100856958A CN101034712B (zh) 2006-03-06 2007-03-06 图像拾取装置和图像拾取系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006059589A JP2007242697A (ja) 2006-03-06 2006-03-06 撮像装置および撮像システム

Publications (2)

Publication Number Publication Date
JP2007242697A true JP2007242697A (ja) 2007-09-20
JP2007242697A5 JP2007242697A5 (enExample) 2009-04-23

Family

ID=38470752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006059589A Pending JP2007242697A (ja) 2006-03-06 2006-03-06 撮像装置および撮像システム

Country Status (3)

Country Link
US (1) US20070205439A1 (enExample)
JP (1) JP2007242697A (enExample)
CN (2) CN101034712B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205843A (ja) * 2009-03-02 2010-09-16 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
EP2237318A2 (en) 2009-03-31 2010-10-06 Sony Corporation Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
JP2010239003A (ja) * 2009-03-31 2010-10-21 Sony Corp 反射防止構造体の製造方法および固体撮像装置の製造方法
JP2011124454A (ja) * 2009-12-11 2011-06-23 Canon Inc 固体撮像装置の製造方法
JP2017045786A (ja) * 2015-08-25 2017-03-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2018142681A (ja) * 2017-02-28 2018-09-13 キヤノン株式会社 光電変換装置、電子機器および輸送機器

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JP4459064B2 (ja) * 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP4416668B2 (ja) * 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP4459099B2 (ja) * 2005-03-18 2010-04-28 キヤノン株式会社 固体撮像装置及びカメラ
JP4677258B2 (ja) 2005-03-18 2011-04-27 キヤノン株式会社 固体撮像装置及びカメラ
JP4469781B2 (ja) * 2005-07-20 2010-05-26 パナソニック株式会社 固体撮像装置及びその製造方法
JP4315457B2 (ja) * 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
EP1930950B1 (en) * 2006-12-08 2012-11-07 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
JP4110192B1 (ja) * 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
JP5159120B2 (ja) * 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP2009141631A (ja) * 2007-12-05 2009-06-25 Canon Inc 光電変換装置及び撮像装置
JP5268389B2 (ja) 2008-02-28 2013-08-21 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5178266B2 (ja) * 2008-03-19 2013-04-10 キヤノン株式会社 固体撮像装置
JP5094498B2 (ja) * 2008-03-27 2012-12-12 キヤノン株式会社 固体撮像装置及び撮像システム
US20090302409A1 (en) * 2008-06-04 2009-12-10 Omnivision Technologies, Inc. Image sensor with multiple thickness anti-relfective coating layers
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
KR20100080150A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP2010177391A (ja) * 2009-01-29 2010-08-12 Sony Corp 固体撮像装置、電子機器、固体撮像装置の製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
JP5563257B2 (ja) * 2009-08-28 2014-07-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2011100900A (ja) * 2009-11-06 2011-05-19 Sony Corp 固体撮像装置及びその製造方法と設計方法並びに電子機器
JP2011129723A (ja) * 2009-12-17 2011-06-30 Sharp Corp 固体撮像素子の製造方法
CN102130137A (zh) * 2010-01-18 2011-07-20 英属开曼群岛商恒景科技股份有限公司 图像传感器
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
JP6412328B2 (ja) 2014-04-01 2018-10-24 キヤノン株式会社 固体撮像装置およびカメラ
CN105268110B (zh) * 2014-06-19 2018-03-13 昆山科技大学 黄疸光疗装置
JP6109125B2 (ja) 2014-08-20 2017-04-05 キヤノン株式会社 半導体装置、固体撮像装置、および撮像システム
US9979916B2 (en) 2014-11-21 2018-05-22 Canon Kabushiki Kaisha Imaging apparatus and imaging system
JP7023109B2 (ja) * 2015-06-05 2022-02-21 ソニーグループ株式会社 固体撮像装置
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
US12324254B2 (en) * 2021-03-04 2025-06-03 Taiwan Semiconductor Manufacturing Company Limited Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same
US20230411540A1 (en) * 2022-06-16 2023-12-21 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of making

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
JP2010205843A (ja) * 2009-03-02 2010-09-16 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
EP2237318A2 (en) 2009-03-31 2010-10-06 Sony Corporation Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
JP2010239003A (ja) * 2009-03-31 2010-10-21 Sony Corp 反射防止構造体の製造方法および固体撮像装置の製造方法
JP2011124454A (ja) * 2009-12-11 2011-06-23 Canon Inc 固体撮像装置の製造方法
JP2017045786A (ja) * 2015-08-25 2017-03-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2018142681A (ja) * 2017-02-28 2018-09-13 キヤノン株式会社 光電変換装置、電子機器および輸送機器
US10431617B2 (en) 2017-02-28 2019-10-01 Canon Kabushiki Kaisha Photoelectric conversion device and apparatus

Also Published As

Publication number Publication date
CN101976674B (zh) 2012-08-22
CN101034712A (zh) 2007-09-12
US20070205439A1 (en) 2007-09-06
CN101034712B (zh) 2010-12-08
CN101976674A (zh) 2011-02-16

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