JP2011124454A - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP2011124454A JP2011124454A JP2009282285A JP2009282285A JP2011124454A JP 2011124454 A JP2011124454 A JP 2011124454A JP 2009282285 A JP2009282285 A JP 2009282285A JP 2009282285 A JP2009282285 A JP 2009282285A JP 2011124454 A JP2011124454 A JP 2011124454A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000002093 peripheral effect Effects 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- Engineering & Computer Science (AREA)
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】 本発明の固体撮像装置の製造方法は、基板上に撮像領域と周辺回路領域を形成する工程と、撮像領域よりも周辺回路領域の配線パターン密度が高くなるように複数の配線パターンを形成する工程と、配線パターンの間を埋め込む絶縁膜を形成する工程を有する。そして、周辺回路領域上の前記絶縁膜の少なくとも一部をエッチングして除去する工程と、絶縁膜の表面をCMP法によって平坦化する工程と、を有する。
【選択図】 図1
Description
2 素子分離領域
3 第1の絶縁膜
4 第1の配線パターン
5 第2の絶縁膜
6 第2の配線パターン
7 第3の絶縁膜
8 フォトレジスト
Claims (5)
- 基板上に複数の光電変換素子が2次元に配された撮像領域と前記撮像領域の周辺に配された周辺回路領域とを形成する工程と、
前記基板上に前記撮像領域よりも前記周辺回路領域の配線パターン密度が高くなるように複数のパターンからなる配線パターンを形成する工程と、
前記撮像領域および前記周辺回路領域の上部に前記複数のパターンの間を埋め込む絶縁膜を形成する工程と、
前記周辺回路領域に配された前記絶縁膜の少なくとも一部をエッチングして除去する工程と、
前記絶縁膜の少なくとも一部をエッチングして除去する工程の後に、前記絶縁膜の表面をCMP法によって平坦化する工程と、を有する固体撮像装置の製造方法。 - 前記絶縁膜の表面をCMP法によって平坦化する工程の後に、前記複数の光電変換素子に1対1で対応する複数のレンズを前記絶縁膜の上部に形成する工程を有する請求項1記載の固体撮像装置の製造方法。
- 前記絶縁膜の表面をCMP法によって平坦化する工程の後に、前記絶縁膜の上部に、反射防止層を形成する工程を有する請求項1あるいは2のいずれかに記載の固体撮像装置の製造方法。
- 前記絶縁膜を形成する工程において形成される絶縁膜の膜厚は、前記絶縁膜の少なくとも一部をエッチングして除去する工程において除去される絶縁膜の膜厚の2倍以上4倍以下である請求項1乃至3のいずれか1項に記載の固体撮像装置の製造方法。
- 前記絶縁膜を形成する工程において形成される絶縁膜の膜厚は、前記絶縁膜の少なくとも一部をエッチングして除去する工程において除去される絶縁膜の膜厚の3倍である請求項4に記載の固体撮像装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009282285A JP5704811B2 (ja) | 2009-12-11 | 2009-12-11 | 固体撮像装置の製造方法 |
US12/941,678 US20110143485A1 (en) | 2009-12-11 | 2010-11-08 | Method of manufacturing solid-state imaging apparatus |
Applications Claiming Priority (1)
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---|---|---|---|
JP2009282285A JP5704811B2 (ja) | 2009-12-11 | 2009-12-11 | 固体撮像装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011124454A true JP2011124454A (ja) | 2011-06-23 |
JP2011124454A5 JP2011124454A5 (ja) | 2013-01-31 |
JP5704811B2 JP5704811B2 (ja) | 2015-04-22 |
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JP2009282285A Expired - Fee Related JP5704811B2 (ja) | 2009-12-11 | 2009-12-11 | 固体撮像装置の製造方法 |
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US (1) | US20110143485A1 (ja) |
JP (1) | JP5704811B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666629B2 (en) | 2015-03-12 | 2017-05-30 | Canon Kabushiki Kaisha | Method of manufacturing electronic device and method of manufacturing photoelectric conversion device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8956909B2 (en) | 2010-07-16 | 2015-02-17 | Unimicron Technology Corporation | Method of fabricating an electronic device comprising photodiode |
TWI534995B (zh) * | 2010-07-16 | 2016-05-21 | 欣興電子股份有限公司 | 電子裝置及其製法 |
JP2014229756A (ja) * | 2013-05-22 | 2014-12-08 | キヤノン株式会社 | 平坦化方法 |
US20150214114A1 (en) * | 2014-01-28 | 2015-07-30 | United Microelectronics Corp. | Manufacturing method of semiconductor structure |
JP6982977B2 (ja) * | 2017-04-24 | 2021-12-17 | キヤノン株式会社 | 固体撮像装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235537A (ja) * | 1994-02-23 | 1995-09-05 | Mitsubishi Electric Corp | 表面が平坦化された半導体装置およびその製造方法 |
JPH1167765A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 半導体装置の製造方法 |
JP2005012189A (ja) * | 2003-05-28 | 2005-01-13 | Canon Inc | 光電変換装置およびその製造方法 |
JP2006294765A (ja) * | 2005-04-08 | 2006-10-26 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2007242697A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 撮像装置および撮像システム |
Family Cites Families (9)
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JP3782297B2 (ja) * | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
JP2002270688A (ja) * | 2001-03-09 | 2002-09-20 | Oki Electric Ind Co Ltd | 半導体装置の製造方法。 |
US7008840B2 (en) * | 2002-08-26 | 2006-03-07 | Matsushita Electrical Industrial Co., Ltd. | Method for manufacturing semiconductor device with capacitor elements |
US6924472B2 (en) * | 2002-11-12 | 2005-08-02 | Eastman Kodak Company | Image sensor with improved optical response uniformity |
KR100666371B1 (ko) * | 2004-12-23 | 2007-01-09 | 삼성전자주식회사 | 이미지 소자의 제조 방법 |
KR100698067B1 (ko) * | 2004-12-30 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그의 제조방법 |
JP4618786B2 (ja) * | 2005-01-28 | 2011-01-26 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2006261597A (ja) * | 2005-03-18 | 2006-09-28 | Canon Inc | 固体撮像装置、その製造方法及びカメラ |
JP4793402B2 (ja) * | 2008-04-21 | 2011-10-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
-
2009
- 2009-12-11 JP JP2009282285A patent/JP5704811B2/ja not_active Expired - Fee Related
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2010
- 2010-11-08 US US12/941,678 patent/US20110143485A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235537A (ja) * | 1994-02-23 | 1995-09-05 | Mitsubishi Electric Corp | 表面が平坦化された半導体装置およびその製造方法 |
JPH1167765A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 半導体装置の製造方法 |
JP2005012189A (ja) * | 2003-05-28 | 2005-01-13 | Canon Inc | 光電変換装置およびその製造方法 |
JP2006294765A (ja) * | 2005-04-08 | 2006-10-26 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2007242697A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 撮像装置および撮像システム |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666629B2 (en) | 2015-03-12 | 2017-05-30 | Canon Kabushiki Kaisha | Method of manufacturing electronic device and method of manufacturing photoelectric conversion device |
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US20110143485A1 (en) | 2011-06-16 |
JP5704811B2 (ja) | 2015-04-22 |
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