JP2007234724A - 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法 - Google Patents

垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法 Download PDF

Info

Publication number
JP2007234724A
JP2007234724A JP2006051892A JP2006051892A JP2007234724A JP 2007234724 A JP2007234724 A JP 2007234724A JP 2006051892 A JP2006051892 A JP 2006051892A JP 2006051892 A JP2006051892 A JP 2006051892A JP 2007234724 A JP2007234724 A JP 2007234724A
Authority
JP
Japan
Prior art keywords
photonic crystal
dimensional photonic
surface emitting
emitting laser
cavity surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006051892A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007234724A5 (enExample
Inventor
Yasuhiro Nagatomo
靖浩 長友
Mamoru Uchida
護 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006051892A priority Critical patent/JP2007234724A/ja
Priority to US11/678,855 priority patent/US7830943B2/en
Publication of JP2007234724A publication Critical patent/JP2007234724A/ja
Publication of JP2007234724A5 publication Critical patent/JP2007234724A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP2006051892A 2006-02-28 2006-02-28 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法 Pending JP2007234724A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006051892A JP2007234724A (ja) 2006-02-28 2006-02-28 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法
US11/678,855 US7830943B2 (en) 2006-02-28 2007-02-26 Vertical cavity surface emitting laser and method of manufacturing two-dimensional photonic crystal of vertical cavity surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006051892A JP2007234724A (ja) 2006-02-28 2006-02-28 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法

Publications (2)

Publication Number Publication Date
JP2007234724A true JP2007234724A (ja) 2007-09-13
JP2007234724A5 JP2007234724A5 (enExample) 2009-04-16

Family

ID=38443943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006051892A Pending JP2007234724A (ja) 2006-02-28 2006-02-28 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法

Country Status (2)

Country Link
US (1) US7830943B2 (enExample)
JP (1) JP2007234724A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188153A (ja) * 2008-02-06 2009-08-20 Canon Inc 垂直共振器型面発光レーザ
JP2009231578A (ja) * 2008-03-24 2009-10-08 Yokohama National Univ 半導体レーザ
JP2012134259A (ja) * 2010-12-20 2012-07-12 Canon Inc ２次元フォトニック結晶面発光レーザ
JP2013542609A (ja) * 2010-10-29 2013-11-21 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 小モード体積垂直共振器面発光レーザ
JP2014154787A (ja) * 2013-02-12 2014-08-25 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザアレイ素子
WO2020040132A1 (ja) * 2018-08-23 2020-02-27 株式会社ニコン 発光デバイス、発光方法、露光装置、露光方法及びデバイス製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100987358B1 (ko) 2008-07-07 2010-10-13 고려대학교 산학협력단 포토닉 크리스탈 구조가 형성된 발광 소자 및 그 제조 방법
DE102008058435B4 (de) * 2008-11-21 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Kantenemittierender Halbleiterlaser
JP2013161965A (ja) * 2012-02-06 2013-08-19 Kyoto Univ 半導体発光素子
JP7504368B2 (ja) * 2019-12-16 2024-06-24 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法
CN117613666B (zh) * 2023-12-05 2024-04-30 北京工业大学 一种高功率大孔径基模涡旋光波导vcsel相干阵列

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP2004134501A (ja) * 2002-10-09 2004-04-30 Sony Corp 発光素子及びその作製方法
JP2004165461A (ja) * 2002-11-13 2004-06-10 Sony Corp 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2005353623A (ja) * 2004-06-08 2005-12-22 Ricoh Co Ltd 面発光レーザ及び光伝送システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194503B2 (ja) 1992-06-04 2001-07-30 キヤノン株式会社 化合物半導体装置及びその製造方法
JP3689615B2 (ja) 2000-03-29 2005-08-31 キヤノン株式会社 立体形状を有する光電融合デバイス
FR2832513B1 (fr) * 2001-11-21 2004-04-09 Centre Nat Rech Scient Structure a cristal photonique pour la conversion de mode
US6810056B1 (en) * 2002-09-26 2004-10-26 Finisar Corporation Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
JP4641736B2 (ja) * 2003-10-28 2011-03-02 ソニー株式会社 面発光半導体レーザーとその製造方法及び光学装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP2004134501A (ja) * 2002-10-09 2004-04-30 Sony Corp 発光素子及びその作製方法
JP2004165461A (ja) * 2002-11-13 2004-06-10 Sony Corp 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2005353623A (ja) * 2004-06-08 2005-12-22 Ricoh Co Ltd 面発光レーザ及び光伝送システム

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188153A (ja) * 2008-02-06 2009-08-20 Canon Inc 垂直共振器型面発光レーザ
JP2009231578A (ja) * 2008-03-24 2009-10-08 Yokohama National Univ 半導体レーザ
JP2013542609A (ja) * 2010-10-29 2013-11-21 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 小モード体積垂直共振器面発光レーザ
US9991676B2 (en) 2010-10-29 2018-06-05 Hewlett Packard Enterprise Development Lp Small-mode-volume, vertical-cavity, surface-emitting laser
JP2012134259A (ja) * 2010-12-20 2012-07-12 Canon Inc ２次元フォトニック結晶面発光レーザ
JP2014154787A (ja) * 2013-02-12 2014-08-25 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザアレイ素子
WO2020040132A1 (ja) * 2018-08-23 2020-02-27 株式会社ニコン 発光デバイス、発光方法、露光装置、露光方法及びデバイス製造方法
TWI841585B (zh) * 2018-08-23 2024-05-11 日商尼康股份有限公司 光照射裝置、曝光裝置、曝光方法以及元件製造方法

Also Published As

Publication number Publication date
US20070201528A1 (en) 2007-08-30
US7830943B2 (en) 2010-11-09

Similar Documents

Publication Publication Date Title
JP4027392B2 (ja) 垂直共振器型面発光レーザ装置
US7769067B2 (en) Vertical cavity surface emitting laser device
JP4968959B2 (ja) フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
US7830943B2 (en) Vertical cavity surface emitting laser and method of manufacturing two-dimensional photonic crystal of vertical cavity surface emitting laser
JP5037835B2 (ja) 垂直共振器型面発光レーザ
JP4975130B2 (ja) フォトニック結晶面発光レーザ
JP5020866B2 (ja) 垂直共振器型面発光レーザ
US7795058B2 (en) Method for manufacturing optical element
US7697586B2 (en) Surface-emitting laser
TW200427163A (en) Surface light emitting semiconductor laser element
JPWO2009116140A1 (ja) 光半導体素子及びその製造方法
JP2008218975A (ja) 構造体、面発光レーザ、及び面発光レーザを備えた発光装置
JP4919628B2 (ja) 面発光レーザ及び面発光レーザアレイ及び光書き込みシステム及び光伝送システム
JP4300246B2 (ja) フォトニック結晶を有する構造体及びそれを用いた面発光レーザ
JP2007234721A (ja) 垂直共振器型面発光レーザ
JP4982838B2 (ja) 光制御素子
JPWO2018134950A1 (ja) 半導体レーザ素子、半導体レーザ素子の製造方法
WO2017045161A1 (zh) 半导体激光器及其加工方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110223

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110401

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111026