JP2007226244A - リソグラフィプロセス用のトップコート及びその製造方法 - Google Patents

リソグラフィプロセス用のトップコート及びその製造方法 Download PDF

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Publication number
JP2007226244A
JP2007226244A JP2007042832A JP2007042832A JP2007226244A JP 2007226244 A JP2007226244 A JP 2007226244A JP 2007042832 A JP2007042832 A JP 2007042832A JP 2007042832 A JP2007042832 A JP 2007042832A JP 2007226244 A JP2007226244 A JP 2007226244A
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JP
Japan
Prior art keywords
silica source
topcoat
tri
triethoxysilane
butoxysilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007042832A
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English (en)
Japanese (ja)
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JP2007226244A5 (enExample
Inventor
Scott Jeffrey Weigel
ジェフリー ワイゲル スコット
Peng Zhang
チャン ペン
Thomas Albert Braymer
アルバート ブレイマー トーマス
Gene Everad Parris
エベラド パリス ジーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JP2007226244A publication Critical patent/JP2007226244A/ja
Publication of JP2007226244A5 publication Critical patent/JP2007226244A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007042832A 2006-02-22 2007-02-22 リソグラフィプロセス用のトップコート及びその製造方法 Pending JP2007226244A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77661006P 2006-02-22 2006-02-22
US11/706,243 US20070196773A1 (en) 2006-02-22 2007-02-15 Top coat for lithography processes

Publications (2)

Publication Number Publication Date
JP2007226244A true JP2007226244A (ja) 2007-09-06
JP2007226244A5 JP2007226244A5 (enExample) 2007-10-18

Family

ID=37872215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007042832A Pending JP2007226244A (ja) 2006-02-22 2007-02-22 リソグラフィプロセス用のトップコート及びその製造方法

Country Status (6)

Country Link
US (1) US20070196773A1 (enExample)
EP (1) EP1826613A3 (enExample)
JP (1) JP2007226244A (enExample)
KR (1) KR100893120B1 (enExample)
CN (1) CN101063818A (enExample)
TW (1) TW200732847A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025140917A1 (en) 2023-12-28 2025-07-03 Merck Patent Gmbh Top coat composition, and method for producing resist pattern and method for producing device using same

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US8945804B2 (en) * 2008-07-09 2015-02-03 Cabot Corporation Treated metal oxide particles and toner compositions
KR101541439B1 (ko) * 2008-07-24 2015-08-03 닛산 가가쿠 고교 가부시키 가이샤 코팅 조성물 및 패턴 형성방법
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
US20150041959A1 (en) * 2008-12-17 2015-02-12 Samsung Sdi Co., Ltd. Hardmask composition for forming resist underlayer film, process for producing a semiconductor integrated circuit device, and semiconductor integrated circuit device
JP5399347B2 (ja) * 2010-09-01 2014-01-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
CN102236253B (zh) * 2011-05-20 2012-11-07 潍坊星泰克微电子材料有限公司 用于微光刻工艺的多相高硅光刻胶成像方法、多相高硅光刻胶及应用
KR20140116908A (ko) * 2012-01-09 2014-10-06 다우 코닝 코포레이션 하드마스크 반사방지 코팅재로서의 다이-t-부톡시다이아세톡시실란계 실세스퀴옥산 수지 및 그의 제조방법
SG10201705330UA (en) * 2012-12-28 2017-07-28 Merck Patent Gmbh Printable diffusion barriers for silicon wafers
WO2017099365A1 (ko) * 2015-12-11 2017-06-15 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
EP4139750A1 (en) * 2020-04-21 2023-03-01 Carl Zeiss SMT GmbH Method for operating an euv lithography apparatus, and euv lithography apparatus
CN111781220A (zh) * 2020-07-03 2020-10-16 中国科学院上海应用物理研究所 一种多功能同步辐射干涉曝光实验平台及实验方法
US12535738B2 (en) * 2021-04-15 2026-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist top coating material for etching rate control

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EP1612604A2 (en) * 2004-07-02 2006-01-04 Rohm and Haas Electronic Materials, L.L.C. Compositions and processes for immersion lithography
JP2006243395A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法

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JPH0543238A (ja) * 1990-10-16 1993-02-23 Mitsui Petrochem Ind Ltd 高光線透過性防塵膜、その製造方法および防塵体
EP1612604A2 (en) * 2004-07-02 2006-01-04 Rohm and Haas Electronic Materials, L.L.C. Compositions and processes for immersion lithography
JP2006243395A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025140917A1 (en) 2023-12-28 2025-07-03 Merck Patent Gmbh Top coat composition, and method for producing resist pattern and method for producing device using same

Also Published As

Publication number Publication date
CN101063818A (zh) 2007-10-31
TW200732847A (en) 2007-09-01
KR20070085174A (ko) 2007-08-27
EP1826613A2 (en) 2007-08-29
EP1826613A3 (en) 2011-01-12
KR100893120B1 (ko) 2009-04-14
US20070196773A1 (en) 2007-08-23

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