JP2007226244A5 - - Google Patents
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- Publication number
- JP2007226244A5 JP2007226244A5 JP2007042832A JP2007042832A JP2007226244A5 JP 2007226244 A5 JP2007226244 A5 JP 2007226244A5 JP 2007042832 A JP2007042832 A JP 2007042832A JP 2007042832 A JP2007042832 A JP 2007042832A JP 2007226244 A5 JP2007226244 A5 JP 2007226244A5
- Authority
- JP
- Japan
- Prior art keywords
- silica source
- tri
- triethoxysilane
- group
- topcoat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 78
- 238000000034 method Methods 0.000 claims 39
- 239000000377 silicon dioxide Substances 0.000 claims 39
- 239000000463 material Substances 0.000 claims 14
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 14
- 150000001875 compounds Chemical class 0.000 claims 13
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical group CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 claims 12
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims 10
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 claims 9
- 125000003709 fluoroalkyl group Chemical group 0.000 claims 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 8
- 125000000962 organic group Chemical group 0.000 claims 8
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims 7
- 229910052731 fluorine Inorganic materials 0.000 claims 7
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims 7
- 229920002120 photoresistant polymer Polymers 0.000 claims 7
- WSWCOQWTEOXDQX-UHFFFAOYSA-N 2,4-Hexadienoic acid Chemical compound CC=CC=CC(O)=O WSWCOQWTEOXDQX-UHFFFAOYSA-N 0.000 claims 6
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 claims 6
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 claims 6
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims 6
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims 6
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 claims 6
- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 claims 6
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical group CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims 6
- RQNVIKXOOKXAJQ-UHFFFAOYSA-N naphthazarin Chemical compound O=C1C=CC(=O)C2=C1C(O)=CC=C2O RQNVIKXOOKXAJQ-UHFFFAOYSA-N 0.000 claims 6
- 229920005573 silicon-containing polymer Polymers 0.000 claims 6
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 claims 6
- AVYKQOAMZCAHRG-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AVYKQOAMZCAHRG-UHFFFAOYSA-N 0.000 claims 6
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims 6
- QALDFNLNVLQDSP-UHFFFAOYSA-N triethoxy-(2,3,4,5,6-pentafluorophenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=C(F)C(F)=C(F)C(F)=C1F QALDFNLNVLQDSP-UHFFFAOYSA-N 0.000 claims 6
- IJROHELDTBDTPH-UHFFFAOYSA-N trimethoxy(3,3,4,4,5,5,6,6,6-nonafluorohexyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F IJROHELDTBDTPH-UHFFFAOYSA-N 0.000 claims 6
- BVQYIDJXNYHKRK-UHFFFAOYSA-N trimethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BVQYIDJXNYHKRK-UHFFFAOYSA-N 0.000 claims 6
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 claims 6
- QCKKBOHAYRLMQP-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH](OC(C)(C)C)OC(C)(C)C QCKKBOHAYRLMQP-UHFFFAOYSA-N 0.000 claims 6
- COKLPZSYWJNYBJ-UHFFFAOYSA-N tri(butan-2-yloxy)silane Chemical compound CCC(C)O[SiH](OC(C)CC)OC(C)CC COKLPZSYWJNYBJ-UHFFFAOYSA-N 0.000 claims 5
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims 5
- RKFOUDRIIBYXLR-UHFFFAOYSA-N trimethoxy-(1,1,2,3,3-pentafluoro-3-phenylpropyl)silane Chemical compound FC(C([Si](OC)(OC)OC)(F)F)C(C1=CC=CC=C1)(F)F RKFOUDRIIBYXLR-UHFFFAOYSA-N 0.000 claims 5
- 125000001153 fluoro group Chemical group F* 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 238000003980 solgel method Methods 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 235000010199 sorbic acid Nutrition 0.000 claims 3
- HJIMAFKWSKZMBK-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F HJIMAFKWSKZMBK-UHFFFAOYSA-N 0.000 claims 2
- NDJKXXJCMXVBJW-UHFFFAOYSA-N Heptadecane Natural products CCCCCCCCCCCCCCCCC NDJKXXJCMXVBJW-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- RBCYCMNKVQPXDR-UHFFFAOYSA-N phenoxysilane Chemical compound [SiH3]OC1=CC=CC=C1 RBCYCMNKVQPXDR-UHFFFAOYSA-N 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- XWQLYVIMMBLXPY-UHFFFAOYSA-N butan-2-yloxysilane Chemical compound CCC(C)O[SiH3] XWQLYVIMMBLXPY-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- BRXRWXRBHMHPOH-UHFFFAOYSA-N diethoxy-(1,1,2,2,2-pentafluoroethoxy)-(3-phenylpropyl)silane Chemical compound FC(F)(F)C(F)(F)O[Si](OCC)(OCC)CCCC1=CC=CC=C1 BRXRWXRBHMHPOH-UHFFFAOYSA-N 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000003381 stabilizer Substances 0.000 claims 1
- -1 triisopropoxysilane Chemical compound 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77661006P | 2006-02-22 | 2006-02-22 | |
| US11/706,243 US20070196773A1 (en) | 2006-02-22 | 2007-02-15 | Top coat for lithography processes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007226244A JP2007226244A (ja) | 2007-09-06 |
| JP2007226244A5 true JP2007226244A5 (enExample) | 2007-10-18 |
Family
ID=37872215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007042832A Pending JP2007226244A (ja) | 2006-02-22 | 2007-02-22 | リソグラフィプロセス用のトップコート及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070196773A1 (enExample) |
| EP (1) | EP1826613A3 (enExample) |
| JP (1) | JP2007226244A (enExample) |
| KR (1) | KR100893120B1 (enExample) |
| CN (1) | CN101063818A (enExample) |
| TW (1) | TW200732847A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945804B2 (en) * | 2008-07-09 | 2015-02-03 | Cabot Corporation | Treated metal oxide particles and toner compositions |
| JP5397636B2 (ja) * | 2008-07-24 | 2014-01-22 | 日産化学工業株式会社 | コーティング組成物及びパターン形成方法 |
| US20150041959A1 (en) * | 2008-12-17 | 2015-02-12 | Samsung Sdi Co., Ltd. | Hardmask composition for forming resist underlayer film, process for producing a semiconductor integrated circuit device, and semiconductor integrated circuit device |
| KR101288572B1 (ko) * | 2008-12-17 | 2013-07-22 | 제일모직주식회사 | 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물 |
| JP5399347B2 (ja) | 2010-09-01 | 2014-01-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
| CN102236253B (zh) * | 2011-05-20 | 2012-11-07 | 潍坊星泰克微电子材料有限公司 | 用于微光刻工艺的多相高硅光刻胶成像方法、多相高硅光刻胶及应用 |
| KR20140116908A (ko) * | 2012-01-09 | 2014-10-06 | 다우 코닝 코포레이션 | 하드마스크 반사방지 코팅재로서의 다이-t-부톡시다이아세톡시실란계 실세스퀴옥산 수지 및 그의 제조방법 |
| SG10201705330UA (en) * | 2012-12-28 | 2017-07-28 | Merck Patent Gmbh | Printable diffusion barriers for silicon wafers |
| KR20170069914A (ko) * | 2015-12-11 | 2017-06-21 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자 |
| US10260149B2 (en) * | 2016-04-28 | 2019-04-16 | Applied Materials, Inc. | Side inject nozzle design for processing chamber |
| CN107403717B (zh) * | 2016-04-28 | 2023-07-18 | 应用材料公司 | 一种用于处理腔室的改进侧注入喷嘴设计 |
| KR102177417B1 (ko) * | 2017-12-31 | 2020-11-11 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 조성물 및 방법 |
| WO2021213986A1 (en) | 2020-04-21 | 2021-10-28 | Carl Zeiss Smt Gmbh | Method for operating an euv lithography apparatus, and euv lithography apparatus |
| CN111781220A (zh) * | 2020-07-03 | 2020-10-16 | 中国科学院上海应用物理研究所 | 一种多功能同步辐射干涉曝光实验平台及实验方法 |
| US20220334482A1 (en) * | 2021-04-15 | 2022-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist top coating material for etching rate control |
| WO2025140917A1 (en) | 2023-12-28 | 2025-07-03 | Merck Patent Gmbh | Top coat composition, and method for producing resist pattern and method for producing device using same |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232088A (en) * | 1978-04-12 | 1980-11-04 | General Electric Company | Polycarbonate articles coated with an adherent, durable organopolysiloxane coating and process for producing same |
| JPH0543238A (ja) * | 1990-10-16 | 1993-02-23 | Mitsui Petrochem Ind Ltd | 高光線透過性防塵膜、その製造方法および防塵体 |
| DE69130280T2 (de) * | 1990-10-16 | 1999-04-08 | Mitsui Chemicals, Inc., Tokio/Tokyo | Verwendung eines hochlichtdurchlässigen staubschützenden Films, Verfahren zu dessen Herstellung und staubschützendes Element |
| US5645891A (en) * | 1994-11-23 | 1997-07-08 | Battelle Memorial Institute | Ceramic porous material and method of making same |
| US5707680A (en) * | 1996-01-02 | 1998-01-13 | Moore; Steven Jerome | Method for reducing invalid acceptances of expired printed offers and end-consumer re-distribution of printed works |
| JP3378441B2 (ja) * | 1996-07-24 | 2003-02-17 | 株式会社東芝 | 陰極線管およびその製造方法 |
| US5869141A (en) * | 1996-11-04 | 1999-02-09 | The Boeing Company | Surface pretreatment for sol coating of metals |
| US5858457A (en) * | 1997-09-25 | 1999-01-12 | Sandia Corporation | Process to form mesostructured films |
| US5944866A (en) * | 1997-09-26 | 1999-08-31 | Lucent Technologies Inc. | Fabrication including sol-gel processing |
| US6258514B1 (en) * | 1999-03-10 | 2001-07-10 | Lsi Logic Corporation | Top surface imaging technique using a topcoat delivery system |
| US6455234B1 (en) * | 1999-05-04 | 2002-09-24 | Air Products And Chemicals, Inc. | Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers |
| US6238849B1 (en) * | 1999-06-21 | 2001-05-29 | Air Products And Chemicals, Inc. | Cyclic ureas in photoresist developers |
| US6127101A (en) * | 1999-10-12 | 2000-10-03 | Air Products And Chemicals, Inc. | Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers |
| US6365266B1 (en) * | 1999-12-07 | 2002-04-02 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
| US6268115B1 (en) * | 2000-01-06 | 2001-07-31 | Air Products And Chemicals, Inc. | Use of alkylated polyamines in photoresist developers |
| US6120978A (en) * | 2000-01-06 | 2000-09-19 | Air Products And Chemicals, Inc. | Use of N,N-dialkyl ureas in photoresist developers |
| US6730454B2 (en) * | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| US7122880B2 (en) * | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
| US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
| TW200413417A (en) * | 2002-10-31 | 2004-08-01 | Arch Spec Chem Inc | Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof |
| TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US20050202351A1 (en) * | 2004-03-09 | 2005-09-15 | Houlihan Francis M. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| JP4484603B2 (ja) * | 2004-03-31 | 2010-06-16 | セントラル硝子株式会社 | トップコート組成物 |
| US7335456B2 (en) * | 2004-05-27 | 2008-02-26 | International Business Machines Corporation | Top coat material and use thereof in lithography processes |
| JP2008502154A (ja) * | 2004-06-01 | 2008-01-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 紫外線透過性アルカンと、これを真空用途および深紫外線用途に利用する方法 |
| TWI322334B (en) * | 2004-07-02 | 2010-03-21 | Rohm & Haas Elect Mat | Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein |
| KR100618850B1 (ko) * | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| JP4368266B2 (ja) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| KR100640587B1 (ko) * | 2004-09-23 | 2006-11-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| US7320855B2 (en) * | 2004-11-03 | 2008-01-22 | International Business Machines Corporation | Silicon containing TARC/barrier layer |
| JP4616040B2 (ja) * | 2005-03-03 | 2011-01-19 | 富士通株式会社 | レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法 |
| KR100652425B1 (ko) * | 2005-08-12 | 2006-12-01 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
-
2007
- 2007-02-15 US US11/706,243 patent/US20070196773A1/en not_active Abandoned
- 2007-02-22 EP EP07003658A patent/EP1826613A3/en not_active Withdrawn
- 2007-02-22 JP JP2007042832A patent/JP2007226244A/ja active Pending
- 2007-02-22 KR KR1020070023159A patent/KR100893120B1/ko not_active Expired - Fee Related
- 2007-02-25 CN CNA2007101006433A patent/CN101063818A/zh active Pending
- 2007-02-26 TW TW096106563A patent/TW200732847A/zh unknown
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