JP2009128564A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009128564A5 JP2009128564A5 JP2007302577A JP2007302577A JP2009128564A5 JP 2009128564 A5 JP2009128564 A5 JP 2009128564A5 JP 2007302577 A JP2007302577 A JP 2007302577A JP 2007302577 A JP2007302577 A JP 2007302577A JP 2009128564 A5 JP2009128564 A5 JP 2009128564A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- resist underlayer
- underlayer film
- lithography
- forming composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001459 lithography Methods 0.000 claims 9
- 229920005573 silicon-containing polymer Polymers 0.000 claims 7
- 125000001424 substituent group Chemical group 0.000 claims 6
- 239000003960 organic solvent Substances 0.000 claims 4
- 125000005372 silanol group Chemical group 0.000 claims 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims 3
- 239000003729 cation exchange resin Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 125000000962 organic group Chemical group 0.000 claims 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 3
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 claims 2
- 125000000304 alkynyl group Chemical group 0.000 claims 2
- 238000006482 condensation reaction Methods 0.000 claims 2
- 125000000392 cycloalkenyl group Chemical group 0.000 claims 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 230000007062 hydrolysis Effects 0.000 claims 2
- 238000006460 hydrolysis reaction Methods 0.000 claims 2
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 230000002378 acidificating effect Effects 0.000 claims 1
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 150000001768 cations Chemical class 0.000 claims 1
- -1 dimethylsilyl group Chemical group 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 230000003301 hydrolyzing effect Effects 0.000 claims 1
- 125000001624 naphthyl group Chemical group 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 150000004714 phosphonium salts Chemical group 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007302577A JP5003894B2 (ja) | 2007-11-22 | 2007-11-22 | レジスト下層膜形成組成物及び半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007302577A JP5003894B2 (ja) | 2007-11-22 | 2007-11-22 | レジスト下層膜形成組成物及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009128564A JP2009128564A (ja) | 2009-06-11 |
| JP2009128564A5 true JP2009128564A5 (enExample) | 2010-11-25 |
| JP5003894B2 JP5003894B2 (ja) | 2012-08-15 |
Family
ID=40819562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007302577A Active JP5003894B2 (ja) | 2007-11-22 | 2007-11-22 | レジスト下層膜形成組成物及び半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5003894B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5739360B2 (ja) * | 2012-02-14 | 2015-06-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
| CN109790414B (zh) | 2016-10-04 | 2022-07-12 | 日产化学株式会社 | 用于图案反转的被覆组合物 |
| WO2022239631A1 (ja) * | 2021-05-11 | 2022-11-17 | 旭化成株式会社 | 新規末端変性ポリフェニレンエーテルおよび末端変性ポリフェニレンエーテル組成物 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999009457A1 (en) * | 1997-08-14 | 1999-02-25 | Showa Denko K.K. | Resist resin, resist resin composition, and process for patterning therewith |
| JP4235344B2 (ja) * | 2000-05-22 | 2009-03-11 | 富士フイルム株式会社 | 2層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 |
| JP3906393B2 (ja) * | 2002-11-12 | 2007-04-18 | 東亞合成株式会社 | ケイ素系アルカリ可溶性樹脂 |
| JP2006222075A (ja) * | 2005-01-11 | 2006-08-24 | Sumitomo Chemical Co Ltd | 隔壁を備えたプラズマディスプレイパネル用基板及びその製造方法並びにプラズマディスプレイパネルとプラズマディスプレイ装置 |
| JP4602842B2 (ja) * | 2005-06-07 | 2010-12-22 | 東京応化工業株式会社 | 反射防止膜形成用組成物、それを用いた反射防止膜 |
| JP2007178455A (ja) * | 2005-12-26 | 2007-07-12 | Tokyo Ohka Kogyo Co Ltd | レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法 |
| JP2007226214A (ja) * | 2006-01-27 | 2007-09-06 | Toray Ind Inc | 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子 |
| CN101622296B (zh) * | 2007-02-27 | 2013-10-16 | Az电子材料美国公司 | 硅基抗反射涂料组合物 |
-
2007
- 2007-11-22 JP JP2007302577A patent/JP5003894B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102124064B (zh) | 具有*基的含硅的抗蚀剂下层膜形成用组合物 | |
| CN105706000B (zh) | 正型感光性树脂组合物、使用了它的膜的制造方法以及电子部件 | |
| JP2007226244A5 (enExample) | ||
| KR101849638B1 (ko) | 습식-박리성 실리콘-함유 반사방지제 | |
| CN102754034B (zh) | 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物 | |
| KR101708256B1 (ko) | 나노 임프린트용 레지스트 하층막 형성 조성물 | |
| KR101847382B1 (ko) | 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물 | |
| TW200618111A (en) | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | |
| WO2010061744A1 (ja) | シロキサン樹脂組成物およびそれを用いたタッチパネル用保護膜 | |
| JP2014085643A5 (enExample) | ||
| CN108885997B (zh) | 使用了含硅组合物的半导体基板的平坦化方法 | |
| WO2011114995A1 (ja) | シランカップリング剤、ネガ型感光性樹脂組成物、硬化膜、およびタッチパネル用部材 | |
| KR101296889B1 (ko) | 리버스 패터닝 방법 및 재료 | |
| WO2015060155A1 (ja) | ケイ素含有熱または光硬化性組成物 | |
| JP2022037944A (ja) | 水素ガスを用いた前処理によるレジスト下層膜のエッチング耐性を向上する方法 | |
| WO2013125637A1 (ja) | ネガ型感光性樹脂組成物、硬化膜、およびタッチパネル用部材 | |
| KR20100126295A (ko) | 실세스퀴옥산 수지 | |
| WO2016111210A1 (ja) | シリコン含有膜形成用組成物及び該組成物を用いたパターン形成方法 | |
| JP5970933B2 (ja) | パターン形成方法 | |
| JP2009128564A5 (enExample) | ||
| CN115362216B (zh) | 膜形成用组合物 | |
| JP2004038143A5 (enExample) | ||
| CN102037092B (zh) | 氨基酸产生剂和含有氨基酸产生剂的聚硅氧烷组合物 | |
| CN116547343A (zh) | 含有硅的抗蚀剂下层膜形成用组合物 | |
| JP2007046008A5 (enExample) |