JP5003894B2 - レジスト下層膜形成組成物及び半導体装置の製造方法 - Google Patents

レジスト下層膜形成組成物及び半導体装置の製造方法 Download PDF

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JP5003894B2
JP5003894B2 JP2007302577A JP2007302577A JP5003894B2 JP 5003894 B2 JP5003894 B2 JP 5003894B2 JP 2007302577 A JP2007302577 A JP 2007302577A JP 2007302577 A JP2007302577 A JP 2007302577A JP 5003894 B2 JP5003894 B2 JP 5003894B2
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group
resist underlayer
underlayer film
forming composition
formula
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JP2009128564A (ja
JP2009128564A5 (enExample
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光 今村
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Nissan Chemical Corp
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Nissan Chemical Corp
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP2007302577A 2007-11-22 2007-11-22 レジスト下層膜形成組成物及び半導体装置の製造方法 Active JP5003894B2 (ja)

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JP2007302577A JP5003894B2 (ja) 2007-11-22 2007-11-22 レジスト下層膜形成組成物及び半導体装置の製造方法

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JP2007302577A JP5003894B2 (ja) 2007-11-22 2007-11-22 レジスト下層膜形成組成物及び半導体装置の製造方法

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JP2009128564A JP2009128564A (ja) 2009-06-11
JP2009128564A5 JP2009128564A5 (enExample) 2010-11-25
JP5003894B2 true JP5003894B2 (ja) 2012-08-15

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5739360B2 (ja) * 2012-02-14 2015-06-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
WO2018066515A1 (ja) * 2016-10-04 2018-04-12 日産化学工業株式会社 パターン反転のための被覆組成物
WO2022239631A1 (ja) * 2021-05-11 2022-11-17 旭化成株式会社 新規末端変性ポリフェニレンエーテルおよび末端変性ポリフェニレンエーテル組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1004936B1 (en) * 1997-08-14 2003-10-08 Showa Denko K K Resist resin, resist resin composition, and process for patterning therewith
JP4235344B2 (ja) * 2000-05-22 2009-03-11 富士フイルム株式会社 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法
JP3906393B2 (ja) * 2002-11-12 2007-04-18 東亞合成株式会社 ケイ素系アルカリ可溶性樹脂
JP2006222075A (ja) * 2005-01-11 2006-08-24 Sumitomo Chemical Co Ltd 隔壁を備えたプラズマディスプレイパネル用基板及びその製造方法並びにプラズマディスプレイパネルとプラズマディスプレイ装置
JP4602842B2 (ja) * 2005-06-07 2010-12-22 東京応化工業株式会社 反射防止膜形成用組成物、それを用いた反射防止膜
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法
JP2007226214A (ja) * 2006-01-27 2007-09-06 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
CN101622296B (zh) * 2007-02-27 2013-10-16 Az电子材料美国公司 硅基抗反射涂料组合物

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