JP2019507373A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019507373A5 JP2019507373A5 JP2018534865A JP2018534865A JP2019507373A5 JP 2019507373 A5 JP2019507373 A5 JP 2019507373A5 JP 2018534865 A JP2018534865 A JP 2018534865A JP 2018534865 A JP2018534865 A JP 2018534865A JP 2019507373 A5 JP2019507373 A5 JP 2019507373A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- resist pattern
- composition
- carbon atoms
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000004432 carbon atom Chemical group C* 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 5
- -1 polysiloxane Polymers 0.000 claims 5
- 239000011247 coating layer Substances 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 229920001296 polysiloxane Polymers 0.000 claims 4
- 125000004429 atom Chemical group 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 3
- 239000002904 solvent Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000002947 alkylene group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 125000000732 arylene group Chemical group 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 238000004381 surface treatment Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016020151 | 2016-02-04 | ||
| JP2016020151A JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| PCT/EP2017/000083 WO2017133830A1 (en) | 2016-02-04 | 2017-01-25 | Surface treatment composition and surface treatment method of resist pattern using the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019507373A JP2019507373A (ja) | 2019-03-14 |
| JP2019507373A5 true JP2019507373A5 (enExample) | 2020-02-06 |
| JP6780004B2 JP6780004B2 (ja) | 2020-11-04 |
Family
ID=58018050
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016020151A Pending JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| JP2018534865A Active JP6780004B2 (ja) | 2016-02-04 | 2017-01-25 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016020151A Pending JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190041757A1 (enExample) |
| JP (2) | JP2017138514A (enExample) |
| KR (1) | KR20180104736A (enExample) |
| CN (1) | CN108604070A (enExample) |
| TW (1) | TW201739842A (enExample) |
| WO (1) | WO2017133830A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018005046A (ja) * | 2016-07-05 | 2018-01-11 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法 |
| KR20210015801A (ko) * | 2018-05-25 | 2021-02-10 | 바스프 에스이 | 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 용매 혼합물을 포함하는 조성물의 용도 |
| WO2021020091A1 (ja) * | 2019-07-29 | 2021-02-04 | Jsr株式会社 | 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002030118A (ja) * | 2000-07-14 | 2002-01-31 | Tokyo Ohka Kogyo Co Ltd | 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法 |
| DE10129577A1 (de) * | 2001-06-20 | 2003-01-16 | Infineon Technologies Ag | Silylierverfahren für Fotoresists im UV-Bereich |
| KR100618850B1 (ko) * | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| DE102004041610B4 (de) * | 2004-08-27 | 2006-09-07 | Kodak Polychrome Graphics Gmbh | Verfahren zur Herstellung einer Lithographie-Druckplatte |
| US7566525B2 (en) | 2005-06-14 | 2009-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication |
| US7531296B2 (en) | 2005-08-24 | 2009-05-12 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method of forming high etch resistant resist patterns |
| US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
| JP5446648B2 (ja) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | パターン形成方法 |
| KR101295858B1 (ko) * | 2009-07-23 | 2013-08-12 | 다우 코닝 코포레이션 | 더블 패터닝 방법 및 물질 |
| PL2520440T3 (pl) * | 2009-12-29 | 2018-09-28 | Toyobo Co., Ltd. | Sposób wytwarzania fleksograficznej płyty drukowej oraz fleksograficzna płyta drukowa |
| US8852848B2 (en) * | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
| WO2014157064A1 (ja) * | 2013-03-28 | 2014-10-02 | 東洋紡株式会社 | フレキソ印刷版の製造方法 |
-
2016
- 2016-02-04 JP JP2016020151A patent/JP2017138514A/ja active Pending
-
2017
- 2017-01-25 US US16/074,843 patent/US20190041757A1/en not_active Abandoned
- 2017-01-25 JP JP2018534865A patent/JP6780004B2/ja active Active
- 2017-01-25 WO PCT/EP2017/000083 patent/WO2017133830A1/en not_active Ceased
- 2017-01-25 KR KR1020187024835A patent/KR20180104736A/ko not_active Withdrawn
- 2017-01-25 CN CN201780008738.4A patent/CN108604070A/zh active Pending
- 2017-02-03 TW TW106103679A patent/TW201739842A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017156685A5 (enExample) | ||
| JP2019507373A5 (enExample) | ||
| JP2012144695A5 (enExample) | ||
| KR101296889B1 (ko) | 리버스 패터닝 방법 및 재료 | |
| JPWO2020030855A5 (enExample) | ||
| JP2009175436A5 (enExample) | ||
| WO2011149029A1 (ja) | 絶縁パターン形成方法及びダマシンプロセス用絶縁パターン形成材料 | |
| JP2009115835A5 (enExample) | ||
| TW200529252A (en) | Insulating film, method for forming same and composition for forming film | |
| JP2006269402A (ja) | 絶縁材料形成用組成物および絶縁膜 | |
| CN109072039A (zh) | 用于显示装置基底加工的包含倍半硅氧烷聚合物和硅烷中至少一种的粘合剂层离层 | |
| JP2006018249A5 (enExample) | ||
| JP2006152063A (ja) | 新規ポリカルボシランおよびその製造方法、膜形成用組成物、ならびに膜およびその形成方法 | |
| TWI812824B (zh) | 包含嵌段共聚物而成之矽質膜形成組成物、及使用其之矽質膜的製造方法 | |
| JP2011502844A5 (enExample) | ||
| JP2009109541A5 (enExample) | ||
| JP2023086715A5 (enExample) | ||
| JP2023184588A5 (enExample) | ||
| JPS60124943A (ja) | 酸化珪素膜の形成方法 | |
| JP2574403B2 (ja) | 有機ケイ素重合体及びその製法ならびにそれを使用した半導体装置 | |
| JPS6155524B2 (enExample) | ||
| JP5413185B2 (ja) | ネガ型感放射線性組成物、硬化パターン形成方法および硬化パターン | |
| JP2009185255A5 (enExample) | ||
| JPS62215944A (ja) | 感光性耐熱樹脂組成物及び絶縁層形成方法 | |
| JP2007196211A5 (enExample) |