JP2017138514A - 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 - Google Patents
表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 Download PDFInfo
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- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016020151A JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| JP2018534865A JP6780004B2 (ja) | 2016-02-04 | 2017-01-25 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| KR1020187024835A KR20180104736A (ko) | 2016-02-04 | 2017-01-25 | 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법 |
| CN201780008738.4A CN108604070A (zh) | 2016-02-04 | 2017-01-25 | 表面处理用组合物以及使用其的抗蚀图案的表面处理方法 |
| PCT/EP2017/000083 WO2017133830A1 (en) | 2016-02-04 | 2017-01-25 | Surface treatment composition and surface treatment method of resist pattern using the same |
| US16/074,843 US20190041757A1 (en) | 2016-02-04 | 2017-01-25 | Surface treatment composition and surface treatment method of resist pattern using the same |
| TW106103679A TW201739842A (zh) | 2016-02-04 | 2017-02-03 | 表面處理用組成物及使用其之光阻圖案之表面處理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016020151A JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2017138514A true JP2017138514A (ja) | 2017-08-10 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016020151A Pending JP2017138514A (ja) | 2016-02-04 | 2016-02-04 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
| JP2018534865A Active JP6780004B2 (ja) | 2016-02-04 | 2017-01-25 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018534865A Active JP6780004B2 (ja) | 2016-02-04 | 2017-01-25 | 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190041757A1 (enExample) |
| JP (2) | JP2017138514A (enExample) |
| KR (1) | KR20180104736A (enExample) |
| CN (1) | CN108604070A (enExample) |
| TW (1) | TW201739842A (enExample) |
| WO (1) | WO2017133830A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2018005046A (ja) * | 2016-07-05 | 2018-01-11 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ | 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法 |
| KR20210015801A (ko) * | 2018-05-25 | 2021-02-10 | 바스프 에스이 | 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 용매 혼합물을 포함하는 조성물의 용도 |
| WO2021020091A1 (ja) * | 2019-07-29 | 2021-02-04 | Jsr株式会社 | 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002030118A (ja) * | 2000-07-14 | 2002-01-31 | Tokyo Ohka Kogyo Co Ltd | 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法 |
| DE10129577A1 (de) * | 2001-06-20 | 2003-01-16 | Infineon Technologies Ag | Silylierverfahren für Fotoresists im UV-Bereich |
| KR100618850B1 (ko) * | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| DE102004041610B4 (de) * | 2004-08-27 | 2006-09-07 | Kodak Polychrome Graphics Gmbh | Verfahren zur Herstellung einer Lithographie-Druckplatte |
| US7566525B2 (en) | 2005-06-14 | 2009-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication |
| US7531296B2 (en) | 2005-08-24 | 2009-05-12 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method of forming high etch resistant resist patterns |
| US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
| JP5446648B2 (ja) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | パターン形成方法 |
| KR101295858B1 (ko) * | 2009-07-23 | 2013-08-12 | 다우 코닝 코포레이션 | 더블 패터닝 방법 및 물질 |
| PL2520440T3 (pl) * | 2009-12-29 | 2018-09-28 | Toyobo Co., Ltd. | Sposób wytwarzania fleksograficznej płyty drukowej oraz fleksograficzna płyta drukowa |
| US8852848B2 (en) * | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
| WO2014157064A1 (ja) * | 2013-03-28 | 2014-10-02 | 東洋紡株式会社 | フレキソ印刷版の製造方法 |
-
2016
- 2016-02-04 JP JP2016020151A patent/JP2017138514A/ja active Pending
-
2017
- 2017-01-25 US US16/074,843 patent/US20190041757A1/en not_active Abandoned
- 2017-01-25 JP JP2018534865A patent/JP6780004B2/ja active Active
- 2017-01-25 WO PCT/EP2017/000083 patent/WO2017133830A1/en not_active Ceased
- 2017-01-25 KR KR1020187024835A patent/KR20180104736A/ko not_active Withdrawn
- 2017-01-25 CN CN201780008738.4A patent/CN108604070A/zh active Pending
- 2017-02-03 TW TW106103679A patent/TW201739842A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019507373A (ja) | 2019-03-14 |
| JP6780004B2 (ja) | 2020-11-04 |
| KR20180104736A (ko) | 2018-09-21 |
| TW201739842A (zh) | 2017-11-16 |
| US20190041757A1 (en) | 2019-02-07 |
| CN108604070A (zh) | 2018-09-28 |
| WO2017133830A1 (en) | 2017-08-10 |
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