CN108604070A - 表面处理用组合物以及使用其的抗蚀图案的表面处理方法 - Google Patents

表面处理用组合物以及使用其的抗蚀图案的表面处理方法 Download PDF

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Publication number
CN108604070A
CN108604070A CN201780008738.4A CN201780008738A CN108604070A CN 108604070 A CN108604070 A CN 108604070A CN 201780008738 A CN201780008738 A CN 201780008738A CN 108604070 A CN108604070 A CN 108604070A
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CN
China
Prior art keywords
composition
resist pattern
carbon atoms
resist
group
Prior art date
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Pending
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CN201780008738.4A
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English (en)
Chinese (zh)
Inventor
王晓伟
长原达郎
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AZ Electronic Materials Luxembourg SARL
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AZ Electronic Materials Luxembourg SARL
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Application filed by AZ Electronic Materials Luxembourg SARL filed Critical AZ Electronic Materials Luxembourg SARL
Publication of CN108604070A publication Critical patent/CN108604070A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
CN201780008738.4A 2016-02-04 2017-01-25 表面处理用组合物以及使用其的抗蚀图案的表面处理方法 Pending CN108604070A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-020151 2016-02-04
JP2016020151A JP2017138514A (ja) 2016-02-04 2016-02-04 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
PCT/EP2017/000083 WO2017133830A1 (en) 2016-02-04 2017-01-25 Surface treatment composition and surface treatment method of resist pattern using the same

Publications (1)

Publication Number Publication Date
CN108604070A true CN108604070A (zh) 2018-09-28

Family

ID=58018050

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780008738.4A Pending CN108604070A (zh) 2016-02-04 2017-01-25 表面处理用组合物以及使用其的抗蚀图案的表面处理方法

Country Status (6)

Country Link
US (1) US20190041757A1 (enExample)
JP (2) JP2017138514A (enExample)
KR (1) KR20180104736A (enExample)
CN (1) CN108604070A (enExample)
TW (1) TW201739842A (enExample)
WO (1) WO2017133830A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112135899A (zh) * 2018-05-25 2020-12-25 巴斯夫欧洲公司 包含溶剂混合物的组合物用于在处理具有50nm或更小的线-空间尺寸的图案化材料时避免图案坍塌的用途

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018005046A (ja) * 2016-07-05 2018-01-11 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法
JP7342953B2 (ja) * 2019-07-29 2023-09-12 Jsr株式会社 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1734352A (zh) * 2004-07-22 2006-02-15 三星电子株式会社 用于半导体器件制造的掩模图形及形成掩模图形的方法以及制造精细地构图的半导体器件的方法
TW201027593A (en) * 2008-10-07 2010-07-16 Shinetsu Chemical Co Patterning process
CN101981501A (zh) * 2008-04-02 2011-02-23 Az电子材料美国公司 使用双重图案化的光致抗蚀剂图像成形方法
CN102439523A (zh) * 2009-07-23 2012-05-02 道康宁公司 用于双重图案化的方法和材料
CN103025835A (zh) * 2010-07-28 2013-04-03 Az电子材料美国公司 在光刻胶图案上涂覆的组合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
DE10129577A1 (de) * 2001-06-20 2003-01-16 Infineon Technologies Ag Silylierverfahren für Fotoresists im UV-Bereich
DE102004041610B4 (de) * 2004-08-27 2006-09-07 Kodak Polychrome Graphics Gmbh Verfahren zur Herstellung einer Lithographie-Druckplatte
US7566525B2 (en) 2005-06-14 2009-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
US7531296B2 (en) 2005-08-24 2009-05-12 Taiwan Semiconductor Manufacturing, Co., Ltd. Method of forming high etch resistant resist patterns
JP5751492B2 (ja) * 2009-12-29 2015-07-22 東洋紡株式会社 フレキソ印刷版の製造方法およびフレキソ印刷版
WO2014157064A1 (ja) * 2013-03-28 2014-10-02 東洋紡株式会社 フレキソ印刷版の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1734352A (zh) * 2004-07-22 2006-02-15 三星电子株式会社 用于半导体器件制造的掩模图形及形成掩模图形的方法以及制造精细地构图的半导体器件的方法
CN101981501A (zh) * 2008-04-02 2011-02-23 Az电子材料美国公司 使用双重图案化的光致抗蚀剂图像成形方法
TW201027593A (en) * 2008-10-07 2010-07-16 Shinetsu Chemical Co Patterning process
CN102439523A (zh) * 2009-07-23 2012-05-02 道康宁公司 用于双重图案化的方法和材料
CN103025835A (zh) * 2010-07-28 2013-04-03 Az电子材料美国公司 在光刻胶图案上涂覆的组合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112135899A (zh) * 2018-05-25 2020-12-25 巴斯夫欧洲公司 包含溶剂混合物的组合物用于在处理具有50nm或更小的线-空间尺寸的图案化材料时避免图案坍塌的用途

Also Published As

Publication number Publication date
US20190041757A1 (en) 2019-02-07
TW201739842A (zh) 2017-11-16
JP2019507373A (ja) 2019-03-14
WO2017133830A1 (en) 2017-08-10
JP6780004B2 (ja) 2020-11-04
KR20180104736A (ko) 2018-09-21
JP2017138514A (ja) 2017-08-10

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Application publication date: 20180928