KR100893120B1 - 리소그래피 공정용 탑 코트 - Google Patents

리소그래피 공정용 탑 코트 Download PDF

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Publication number
KR100893120B1
KR100893120B1 KR1020070023159A KR20070023159A KR100893120B1 KR 100893120 B1 KR100893120 B1 KR 100893120B1 KR 1020070023159 A KR1020070023159 A KR 1020070023159A KR 20070023159 A KR20070023159 A KR 20070023159A KR 100893120 B1 KR100893120 B1 KR 100893120B1
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South Korea
Prior art keywords
top coat
butoxysilane
silica
tri
triethoxysilane
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Expired - Fee Related
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KR1020070023159A
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English (en)
Korean (ko)
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KR20070085174A (ko
Inventor
스콧 제프리 웨이겔
펭 장
토마스 알버트 브라이머
진 에버래드 패리스
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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Publication of KR20070085174A publication Critical patent/KR20070085174A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070023159A 2006-02-22 2007-02-22 리소그래피 공정용 탑 코트 Expired - Fee Related KR100893120B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US77661006P 2006-02-22 2006-02-22
US60/776,610 2006-02-22
US11/706,243 US20070196773A1 (en) 2006-02-22 2007-02-15 Top coat for lithography processes
US11/706,243 2007-02-15

Publications (2)

Publication Number Publication Date
KR20070085174A KR20070085174A (ko) 2007-08-27
KR100893120B1 true KR100893120B1 (ko) 2009-04-14

Family

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KR1020070023159A Expired - Fee Related KR100893120B1 (ko) 2006-02-22 2007-02-22 리소그래피 공정용 탑 코트

Country Status (6)

Country Link
US (1) US20070196773A1 (enExample)
EP (1) EP1826613A3 (enExample)
JP (1) JP2007226244A (enExample)
KR (1) KR100893120B1 (enExample)
CN (1) CN101063818A (enExample)
TW (1) TW200732847A (enExample)

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JP5397636B2 (ja) * 2008-07-24 2014-01-22 日産化学工業株式会社 コーティング組成物及びパターン形成方法
US20150041959A1 (en) * 2008-12-17 2015-02-12 Samsung Sdi Co., Ltd. Hardmask composition for forming resist underlayer film, process for producing a semiconductor integrated circuit device, and semiconductor integrated circuit device
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
JP5399347B2 (ja) 2010-09-01 2014-01-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
CN102236253B (zh) * 2011-05-20 2012-11-07 潍坊星泰克微电子材料有限公司 用于微光刻工艺的多相高硅光刻胶成像方法、多相高硅光刻胶及应用
KR20140116908A (ko) * 2012-01-09 2014-10-06 다우 코닝 코포레이션 하드마스크 반사방지 코팅재로서의 다이-t-부톡시다이아세톡시실란계 실세스퀴옥산 수지 및 그의 제조방법
SG10201705330UA (en) * 2012-12-28 2017-07-28 Merck Patent Gmbh Printable diffusion barriers for silicon wafers
KR20170069914A (ko) * 2015-12-11 2017-06-21 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
WO2021213986A1 (en) 2020-04-21 2021-10-28 Carl Zeiss Smt Gmbh Method for operating an euv lithography apparatus, and euv lithography apparatus
CN111781220A (zh) * 2020-07-03 2020-10-16 中国科学院上海应用物理研究所 一种多功能同步辐射干涉曝光实验平台及实验方法
US20220334482A1 (en) * 2021-04-15 2022-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist top coating material for etching rate control
WO2025140917A1 (en) 2023-12-28 2025-07-03 Merck Patent Gmbh Top coat composition, and method for producing resist pattern and method for producing device using same

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Publication number Publication date
EP1826613A3 (en) 2011-01-12
US20070196773A1 (en) 2007-08-23
CN101063818A (zh) 2007-10-31
EP1826613A2 (en) 2007-08-29
TW200732847A (en) 2007-09-01
JP2007226244A (ja) 2007-09-06
KR20070085174A (ko) 2007-08-27

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