JP2007180425A5 - - Google Patents

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Publication number
JP2007180425A5
JP2007180425A5 JP2005379661A JP2005379661A JP2007180425A5 JP 2007180425 A5 JP2007180425 A5 JP 2007180425A5 JP 2005379661 A JP2005379661 A JP 2005379661A JP 2005379661 A JP2005379661 A JP 2005379661A JP 2007180425 A5 JP2007180425 A5 JP 2007180425A5
Authority
JP
Japan
Prior art keywords
capacitor
electrode pad
region
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005379661A
Other languages
English (en)
Japanese (ja)
Other versions
JP5052007B2 (ja
JP2007180425A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005379661A priority Critical patent/JP5052007B2/ja
Priority claimed from JP2005379661A external-priority patent/JP5052007B2/ja
Priority to US11/642,896 priority patent/US7332758B2/en
Priority to CN200610171482A priority patent/CN100587948C/zh
Publication of JP2007180425A publication Critical patent/JP2007180425A/ja
Priority to US12/003,111 priority patent/US7692227B2/en
Publication of JP2007180425A5 publication Critical patent/JP2007180425A5/ja
Application granted granted Critical
Publication of JP5052007B2 publication Critical patent/JP5052007B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005379661A 2005-12-28 2005-12-28 半導体装置 Expired - Fee Related JP5052007B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005379661A JP5052007B2 (ja) 2005-12-28 2005-12-28 半導体装置
US11/642,896 US7332758B2 (en) 2005-12-28 2006-12-21 Semiconductor device
CN200610171482A CN100587948C (zh) 2005-12-28 2006-12-28 半导体器件
US12/003,111 US7692227B2 (en) 2005-12-28 2007-12-20 Semiconductor device having an electrode pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005379661A JP5052007B2 (ja) 2005-12-28 2005-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2007180425A JP2007180425A (ja) 2007-07-12
JP2007180425A5 true JP2007180425A5 (enExample) 2009-02-19
JP5052007B2 JP5052007B2 (ja) 2012-10-17

Family

ID=38192635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005379661A Expired - Fee Related JP5052007B2 (ja) 2005-12-28 2005-12-28 半導体装置

Country Status (3)

Country Link
US (2) US7332758B2 (enExample)
JP (1) JP5052007B2 (enExample)
CN (1) CN100587948C (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5197930B2 (ja) * 2006-06-30 2013-05-15 住友電工デバイス・イノベーション株式会社 半導体受光素子の製造方法
US7919860B2 (en) * 2007-08-27 2011-04-05 Texas Instruments Incorporated Semiconductor device having wafer level chip scale packaging substrate decoupling
JP5401817B2 (ja) * 2008-03-25 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
JP5474662B2 (ja) * 2010-05-27 2014-04-16 住友電工デバイス・イノベーション株式会社 半導体受光素子
WO2012026089A1 (ja) 2010-08-27 2012-03-01 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP5734784B2 (ja) * 2011-08-05 2015-06-17 株式会社東芝 光結合装置
JP2013115371A (ja) 2011-11-30 2013-06-10 Sumitomo Electric Device Innovations Inc 容量素子
JP5920128B2 (ja) 2012-09-07 2016-05-18 住友電気工業株式会社 光導波路型受光素子の製造方法および光導波路型受光素子
KR102037866B1 (ko) * 2013-02-05 2019-10-29 삼성전자주식회사 전자장치
JP6094268B2 (ja) 2013-03-04 2017-03-15 住友電気工業株式会社 半導体集積受光デバイス
JP6330549B2 (ja) 2014-07-25 2018-05-30 住友電気工業株式会社 光半導体素子およびその製造方法
USD760230S1 (en) * 2014-09-16 2016-06-28 Daishinku Corporation Piezoelectric vibration device
CN106981542A (zh) * 2017-03-29 2017-07-25 武汉京邦科技有限公司 一种半导体光电倍增器件的制造方法
KR102668436B1 (ko) * 2021-11-08 2024-05-24 (주)위드멤스 트렌치 커패시터 및 이의 제조 방법
CN114362119B (zh) * 2022-01-04 2024-05-14 武汉电信器件有限公司 一种apd保护电路结构

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698859A (en) * 1980-01-07 1981-08-08 Mitsubishi Electric Corp Solid-state electronic device
EP0093818A1 (de) * 1982-05-07 1983-11-16 Deutsche ITT Industries GmbH Monolithisch integrierte Schaltung mit integrierten Kondensatoren
JPS63186448A (ja) * 1987-01-28 1988-08-02 Mitsubishi Electric Corp 半導体装置
JPH0758294A (ja) * 1993-08-19 1995-03-03 Kawasaki Steel Corp 半導体集積回路チップ
JP4136009B2 (ja) * 1995-02-02 2008-08-20 住友電気工業株式会社 ｐｉｎ型受光素子、およびｐｉｎ型受光素子の製造方法
JPH0936305A (ja) * 1995-07-20 1997-02-07 Rohm Co Ltd ダイオードとコンデンサとを備えたチップ型複合素子の構造
US6902981B2 (en) * 2002-10-10 2005-06-07 Chartered Semiconductor Manufacturing Ltd Structure and process for a capacitor and other devices
JP2005129689A (ja) 2003-10-23 2005-05-19 Sumitomo Electric Ind Ltd 半導体受光素子及び光受信モジュール
EP1732134B1 (en) * 2004-02-27 2012-10-24 National University Corporation Tohoku Unversity Solid-state imagine device, line sensor, optical sensor, and method for operating solid-state imaging device
KR100672993B1 (ko) * 2005-01-19 2007-01-24 삼성전자주식회사 자가 승압 기능을 갖는 이미지 센서, 자가 승압 방법 및상기 이미지 센서 형성 방법
JP4911445B2 (ja) * 2005-06-29 2012-04-04 富士フイルム株式会社 有機と無機のハイブリッド光電変換素子

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