JP2007180297A - 半導体セラミック、及び積層型半導体セラミックコンデンサ、並びに半導体セラミックの製造方法 - Google Patents
半導体セラミック、及び積層型半導体セラミックコンデンサ、並びに半導体セラミックの製造方法 Download PDFInfo
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- JP2007180297A JP2007180297A JP2005377538A JP2005377538A JP2007180297A JP 2007180297 A JP2007180297 A JP 2007180297A JP 2005377538 A JP2005377538 A JP 2005377538A JP 2005377538 A JP2005377538 A JP 2005377538A JP 2007180297 A JP2007180297 A JP 2007180297A
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Abstract
【解決手段】SrサイトとTiサイトとの配合モル比mを1.000≦m<1.020とし、Sr元素よりも価数の大きなLa等のドナー元素をTi元素100モルに対し0.8〜2.0モルの範囲でSrサイトに固溶させ、Mn等の遷移金属元素をTi元素100モルに対し0.3〜1.0モルの範囲で含有させて結晶粒界に偏析させ、結晶粒子の平均粒径を1.0μm以下とした半導体セラミックを得る。半導体セラミック層1a〜1gが積層されてなる部品素体1をこの半導体セラミックで構成し、部品素体1に内部電極2を埋設させる。
【選択図】図1
Description
ここで、εは誘電率、Sは電極面積、dは電極間距離である。
SrサイトとTiサイトの配合モル比mは、半導体セラミックの誘電特性や結晶粒子の平均粒径に影響を及ぼす。
Sr元素よりも価数の大きなドナー元素をSrサイトに固溶させ、かつ還元雰囲気で焼成処理を行うことによりセラミックを半導体化することが可能となるが、その含有モル量は見掛け比誘電率εrAPPに影響を与える。すなわち、前記ドナー元素がTi元素100モルに対し0.8モル未満の場合は所望の大きな見掛け比誘電率εrAPPを得ることができない。一方、ドナー元素がTi100モルに対し2.0モルを超えるとSrサイトへの固溶限界を超えてしまってドナー元素が結晶粒界に析出してしまい、このため見掛け比誘電率εrAPPが極端に低下し、誘電特性の劣化を招く。
半導体セラミック中に遷移金属元素を含有させて結晶粒界に偏析させると、二次焼成時に前記遷移金属元素が酸素を結晶粒界に吸着し、これにより誘電特性を向上させることができる。
1a〜1g 半導体セラミック層
2 内部電極
Claims (6)
- SrTiO3系粒界絶縁型の半導体セラミックであって、
SrサイトとTiサイトとの配合モル比mが1.000≦m<1.020であり、
Sr元素よりも価数の大きなドナー元素が、Ti元素100モルに対し0.8〜2.0モルの範囲でSrサイトに固溶されると共に、
所定の遷移金属元素が、前記Ti元素100モルに対し0.3〜1.0モルの範囲で含有されて結晶粒界に偏析され、
かつ、結晶粒子の平均粒径が1.0μm以下であることを特徴とする半導体セラミック。 - 前記ドナー元素が、La及びSmのうちの少なくとも1種の元素を含むことを特徴とする請求項1記載の半導体セラミック。
- 前記所定の遷移金属元素には、Mn、Co、Ni、及びCrのうちの少なくとも1種の元素が含まれることを特徴とする請求項1又は請求項2記載の半導体セラミック。
- 低融点酸化物が、前記Ti元素100モルに対し0.1モル以下の範囲で含有されていることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体セラミック。
- 前記低融点酸化物が、SiO2であることを特徴とする請求項4記載の半導体セラミック。
- 請求項1乃至請求項5のいずれかに記載の半導体セラミックで部品素体が形成されると共に、内部電極が前記部品素体に設けられ、かつ前記部品素体の表面に前記内部電極と電気的に接続可能とされた外部電極が形成されていることを特徴とする積層型半導体セラミックコンデンサ。
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EP0734031B1 (en) * | 1995-03-24 | 2004-06-09 | TDK Corporation | Multilayer varistor |
JP3237502B2 (ja) | 1996-02-14 | 2001-12-10 | 松下電器産業株式会社 | 粒界絶縁型半導体セラミックコンデンサの製造方法 |
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JP2005158896A (ja) * | 2003-11-21 | 2005-06-16 | Tdk Corp | 粒界絶縁型半導体セラミックス及び積層半導体コンデンサ |
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2005
- 2005-12-28 JP JP2005377538A patent/JP4165893B2/ja not_active Expired - Fee Related
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2006
- 2006-12-12 WO PCT/JP2006/324732 patent/WO2007074635A1/ja active Application Filing
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2008
- 2008-06-24 US US12/145,283 patent/US7990678B2/en not_active Expired - Fee Related
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Also Published As
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JP4165893B2 (ja) | 2008-10-15 |
US7990678B2 (en) | 2011-08-02 |
WO2007074635A1 (ja) | 2007-07-05 |
US20080248286A1 (en) | 2008-10-09 |
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