JP2007173812A - 薄膜トランジスタバックプレーン回路およびその製造方法 - Google Patents
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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Abstract
【解決手段】各薄膜トランジスタ110は、ドレインコンタクト構造Dと、ソースコンタクト構造Sと、ソースコンタクト構造とドレインコンタクト構造との間に配置された有機半導体領域115とを含む。各アドレスラインは複数の薄膜トランジスタの列のドレインコンタクト構造に接続されている。各アドレスラインと各薄膜トランジスタのソースコンタクト構造及びドレインコンタクト構造とはそれぞれ、ベース部分118−1,118−2と、ベース部分の少なくとも一つの表面に対向しベース部分に比べて薄いコンタクト層119−1,119−2とを含む。ベース部分は第一材料を含んで構成され、コンタクト層は有機半導体との電気接触性が第一材料に比べて良好な第二材料を含んで構成される。
【選択図】図1
Description
Claims (3)
- 複数の薄膜トランジスタであって、各薄膜トランジスタがドレインコンタクト構造と、ソースコンタクト構造と、前記ソースコンタクト構造と前記ドレインコンタクト構造との間に配置された有機半導体領域とを含む複数の薄膜トランジスタと、
複数のアドレスラインであって、各アドレスラインが前記複数の薄膜トランジスタの列の前記ドレインコンタクト構造に接続されている複数のアドレスラインと、
を備え、
前記各アドレスラインと前記各薄膜トランジスタの前記ソースコンタクト構造および前記ドレインコンタクト構造とがそれぞれ、ベース部分と、前記ベース部分の少なくとも一つの表面に対向して形成され前記ベース部分に比べて薄いコンタクト層と、を含んだ多層構造を備え、
前記ベース部分が、第一材料を含んで構成され、
前記コンタクト層が、前記有機半導体との電気接触性が前記第一材料に比べて良好な第二材料を含んで構成されていることを特徴とする、薄膜トランジスタバックプレーン回路。 - 複数の薄膜トランジスタであって、各薄膜トランジスタがドレインコンタクト構造と、ソースコンタクト構造と、前記ソースコンタクト構造と前記ドレインコンタクト構造との間に配置された有機半導体領域とを含む複数の薄膜トランジスタと、
複数のアドレスラインであって、各アドレスラインが前記複数の薄膜トランジスタの列の前記ドレインコンタクト構造に接続されている複数のアドレスラインと、
を備え、
前記各アドレスラインと前記各薄膜トランジスタの前記ソースコンタクト構造および前記ドレインコンタクト構造とがそれぞれ、ベース部分と、前記ベース部分の少なくとも一つの表面に対向して形成され前記ベース部分に比べて薄いコンタクト層と、を含んだ多層構造を備え、
前記各薄膜トランジスタは、関連するドレインコンタクト構造の第一ベース部分と関連する有機半導体領域の第一部分との間に位置する第一インタフェース領域と、関連するソースコンタクト構造の第二ベース部分と前記関連する有機半導体領域の第二部分との間に位置する第二インタフェース領域と、を規定し、
前記関連するドレインコンタクト構造の第一コンタクト層の少なくとも一部が前記第一インタフェース領域に配置され、
前記関連するドレインコンタクト構造の第二コンタクト層の少なくとも一部が前記第二インタフェース領域に配置されていることを特徴とする、薄膜トランジスタバックプレーン回路。 - 第一ベース部分がドレインコンタクト構造と関連のアドレスラインとに関連し第二ベース部分がソースコンタクト構造に関連する複数のベース部分を所定の仕事関数を有する第一材料を含んで統合的に形成するステップと、
前記複数のベース部分各々に一層以上のコンタクト層を統合的に形成するステップであって、前記一層以上のコンタクト層が前記所定の仕事関数に比べて高い仕事関数を有する第二材料を含むように前記一層以上のコンタクト層を統合的に形成するステップと、
を備えることを特徴とする、薄膜トランジスタバックプレーン回路の製造方法。
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US11/316,551 | 2005-12-21 | ||
US11/316,551 US7566899B2 (en) | 2005-12-21 | 2005-12-21 | Organic thin-film transistor backplane with multi-layer contact structures and data lines |
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JP2007173812A true JP2007173812A (ja) | 2007-07-05 |
JP5420820B2 JP5420820B2 (ja) | 2014-02-19 |
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US20070158644A1 (en) | 2007-07-12 |
US7566899B2 (en) | 2009-07-28 |
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