JP2007150301A5 - - Google Patents

Download PDF

Info

Publication number
JP2007150301A5
JP2007150301A5 JP2006312571A JP2006312571A JP2007150301A5 JP 2007150301 A5 JP2007150301 A5 JP 2007150301A5 JP 2006312571 A JP2006312571 A JP 2006312571A JP 2006312571 A JP2006312571 A JP 2006312571A JP 2007150301 A5 JP2007150301 A5 JP 2007150301A5
Authority
JP
Japan
Prior art keywords
via hole
manufacturing
semiconductor device
forming
lower wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006312571A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007150301A (ja
Filing date
Publication date
Priority claimed from KR1020050113818A external-priority patent/KR100714476B1/ko
Application filed filed Critical
Publication of JP2007150301A publication Critical patent/JP2007150301A/ja
Publication of JP2007150301A5 publication Critical patent/JP2007150301A5/ja
Pending legal-status Critical Current

Links

JP2006312571A 2005-11-25 2006-11-20 半導体装置およびその製造方法 Pending JP2007150301A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050113818A KR100714476B1 (ko) 2005-11-25 2005-11-25 반도체 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
JP2007150301A JP2007150301A (ja) 2007-06-14
JP2007150301A5 true JP2007150301A5 (enExample) 2010-01-14

Family

ID=38086643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006312571A Pending JP2007150301A (ja) 2005-11-25 2006-11-20 半導体装置およびその製造方法

Country Status (3)

Country Link
US (2) US7482684B2 (enExample)
JP (1) JP2007150301A (enExample)
KR (1) KR100714476B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122898B1 (en) * 2005-05-09 2006-10-17 International Business Machines Corporation Electrical programmable metal resistor
KR100714476B1 (ko) * 2005-11-25 2007-05-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5498751B2 (ja) * 2009-10-05 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TW201532247A (zh) 2013-10-16 2015-08-16 康佛森智財管理公司 形成嵌入動態隨機存取記憶體電容器的成本效益佳的方法
US9997457B2 (en) * 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
CN113140501B (zh) * 2020-01-17 2024-10-15 长鑫存储技术有限公司 半导体器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850380B2 (ja) * 1989-07-11 1999-01-27 セイコーエプソン株式会社 半導体装置の製造方法
US6100184A (en) * 1997-08-20 2000-08-08 Sematech, Inc. Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
JPH11330235A (ja) * 1998-05-11 1999-11-30 Sony Corp 半導体装置の絶縁層加工方法および半導体装置の絶縁層加工装置
JPH11340234A (ja) * 1998-05-29 1999-12-10 Matsushita Electron Corp 半導体装置の製造方法
JP3329380B2 (ja) * 1999-09-21 2002-09-30 日本電気株式会社 半導体装置およびその製造方法
KR100385227B1 (ko) * 2001-02-12 2003-05-27 삼성전자주식회사 구리 다층 배선을 가지는 반도체 장치 및 그 형성방법
KR100413828B1 (ko) * 2001-12-13 2004-01-03 삼성전자주식회사 반도체 장치 및 그 형성방법
KR100402428B1 (ko) * 2001-12-18 2003-10-17 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
JP2003249547A (ja) 2002-02-22 2003-09-05 Mitsubishi Electric Corp 配線間の接続構造及びその製造方法
JP2004349609A (ja) * 2003-05-26 2004-12-09 Renesas Technology Corp 半導体装置およびその製造方法
KR20060001313A (ko) * 2004-06-30 2006-01-06 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
JP2006270080A (ja) * 2005-02-25 2006-10-05 Toshiba Corp 半導体装置及びその製造方法
KR100714476B1 (ko) * 2005-11-25 2007-05-07 삼성전자주식회사 반도체 장치 및 그 제조 방법

Similar Documents

Publication Publication Date Title
TWI548032B (zh) 導電內連線層及填充導電內連線層之間隙之方法
TWI324811B (en) Barrier structure for semiconductor devices
TWI579917B (zh) 於通孔底部具有自形成阻障層之半導體設備及其形成方法
TW201113934A (en) Methods for multi-step copper plating on a continuous ruthenium film in recessed features
JP2005509292A5 (enExample)
JP2006024905A5 (enExample)
JP2010539698A5 (enExample)
JP2010245334A5 (enExample)
TWI646578B (zh) 鈷填充金屬化的裝置及方法
TW200518263A (en) Method for fabricating copper interconnects
US20160268207A1 (en) Method and apparatus for protecting metal interconnect from halogen based precursors
JP2010206057A5 (enExample)
TW200710966A (en) Semiconductor device and method for production thereof
JP2013545302A5 (enExample)
JP2008205119A5 (enExample)
JP2007150301A5 (enExample)
US8623759B2 (en) Method for manufacturing semiconductor device
TWI225684B (en) Method of improving a barrier layer in a via or contact opening
US6869871B1 (en) Method of forming metal line in semiconductor device including forming first and second zirconium films
TW200834816A (en) Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication therof and methods of fabricating the same
JP2008141204A5 (enExample)
TW200739810A (en) A method of fabricating a structure for a semiconductor device
JP2005159326A5 (enExample)
TWI490987B (zh) 具有抵抗電漿傷害之先進銲墊結構的半導體元件及其製造方法
CN103426816B (zh) 用于高深宽比填充的半导体反流处理