JP2007073887A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2007073887A JP2007073887A JP2005262262A JP2005262262A JP2007073887A JP 2007073887 A JP2007073887 A JP 2007073887A JP 2005262262 A JP2005262262 A JP 2005262262A JP 2005262262 A JP2005262262 A JP 2005262262A JP 2007073887 A JP2007073887 A JP 2007073887A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate electrode
- contact
- memory cell
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 120
- 239000004020 conductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000011229 interlayer Substances 0.000 claims abstract description 27
- 229910021332 silicide Inorganic materials 0.000 claims description 67
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 67
- 238000009792 diffusion process Methods 0.000 claims description 37
- 238000003860 storage Methods 0.000 claims description 15
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 238000009825 accumulation Methods 0.000 abstract 2
- 230000004048 modification Effects 0.000 description 46
- 238000012986 modification Methods 0.000 description 46
- 229910052739 hydrogen Inorganic materials 0.000 description 37
- 239000001257 hydrogen Substances 0.000 description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 35
- 238000005530 etching Methods 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 230000006866 deterioration Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000002955 isolation Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
【解決手段】上記の課題を解決した半導体装置は、半導体基板と、前記半導体基板上に第1の絶縁膜を介して形成された電荷蓄積層と、前記電荷蓄積層上に第2の絶縁膜を介して形成された導電体層とを含む複数のゲート電極と、前記導電体層上部に設けられた第2の導電体層と、前記ゲート電極間に設けられ、前記ゲート電極とは側面のみで接するバリア絶縁膜と、前記第2の導電体層の上面に接して設けられた層間絶縁膜と、を具備する。
【選択図】図2
Description
本発明の第1の実施形態は、ゲート電極の一部を残してゲート電極間を電極間絶縁膜により埋め、その上にU字型の水素バリア絶縁膜をゲート電極と側面でのみ接するように設けた半導体記憶装置及びその製造方法である。
本実施形態の第1の変形例のビット線方向の断面図を図7に示す。第1の変形例は、水素バリア絶縁膜である第3の絶縁膜38をメモリセルゲート電極22とほぼ同じ高さに形成した不揮発性半導体記憶装置である。
本実施形態の第2の変形例のビット線方向の断面図を図8に示す。第2の変形例は、第3の絶縁膜38を深いU字型にして、フローティングゲート電極24の側面とも接するように形成した不揮発性半導体記憶装置である。
本実施形態の第3の変形例のビット線方向の断面図を図9に示す。第3の変形例は、メモリセルゲート電極22間が第2の絶縁膜36により完全に埋め込まれずに、第2の絶縁膜36をゲート電極22の側壁のように形成した不揮発性半導体記憶装置である。第2の絶縁膜36は、ゲート電極22の上側の側面を露出させるように形成される。
本実施形態の第4の変形例のビット線方向の断面図を図10に示す。第4の変形例は、ゲート電極22間に後酸化膜及び第2の絶縁膜がなく、第3の絶縁膜38がメモリセルトランジスタのゲート電極22の側面全体に接触している不揮発性半導体記憶装置である。
本実施形態の第5の変形例のビット線方向の断面図を図11に示す。第5の変形例は、メモリセルアレイ両端のドレイン側選択トランジスタSTD及びソース側選択トランジスタSTSのコンタクト拡散層領域32d、32sから第2の絶縁膜36を除去した不揮発性半導体記憶装置である。
本実施形態の第6の変形例のビット線方向の断面図を図12に示す。第6の変形例は、ソース線をシリコン基板10中に拡散層を用いて形成した不揮発性半導体記憶装置である。
本発明は、NAND型不揮発性半導体記憶装置だけでなく、その他の半導体記憶装置にも適用できる。
本発明は、メモリセルがフローティングゲート電極型の不揮発性半導体記憶装置だけでなく、その他の半導体記憶装置にも適用することができる。上記の実施形態は、フローティングゲート電極に電荷を蓄積するメモリセルで説明してきたが、例えば、絶縁膜に電荷を蓄積するMONOS(metal oxide nitride oxide silicon)型メモリセルに対しても適用することができる。
Claims (5)
- 半導体基板と、
前記半導体基板上に第1の絶縁膜を介して形成された電荷蓄積層と、前記電荷蓄積層上に第2の絶縁膜を介して形成された導電体層とを含む複数のゲート電極と、
前記導電体層上部に設けられた第2の導電体層と、
前記ゲート電極間に設けられ、前記ゲート電極とは側面のみで接するバリア絶縁膜と、
前記第2の導電体層の上面に接して設けられた層間絶縁膜と、
を具備することを特徴とする半導体装置。 - 半導体基板上に形成された複数のメモリセルと、
直列に接続された複数の前記メモリセルの両端に設けられ、前記メモリセルに電気的に接続された第1及び第2の選択トランジスタと、
前記メモリセルのゲート電極並びに前記第1及び第2の選択トランジスタのゲート電極の導電体層上部に設けられた第2の導電体層と、
前記第1又は第2の選択トランジスタのゲート電極の外側の前記半導体基板中に設けられた第1又は第2の拡散層に接続する第1又は第2のコンタクト電極と、
前記メモリセルのゲート電極、前記第1及び第2の選択トランジスタのゲート電極、並びに前記第1及び第2のコンタクト電極とはそれぞれの側面のみで接するバリア絶縁膜と、
前記第2の導電体層の上面に接して設けられた層間絶縁膜と、
を具備することを特徴とする半導体装置。 - 前記バリア絶縁膜は、シリコン窒化膜を含むことを特徴とする、請求項1若しくは2に記載の半導体装置。
- 前記第2の導電体層は、コバルトシリサイド、ニッケルシリサイド、プラチナシリサイド、チタンシリサイド、タンタルシリサイドのいずれか1を含むことを特徴とする、請求項1ないし3のいずれか1に記載の半導体装置。
- 半導体基板上に第1の絶縁膜を介して電荷蓄積層を形成する工程と、
前記電荷蓄積層上に第2の絶縁膜を介して導電体層を形成して複数のゲート電極を形成する工程と、
前記ゲート電極間に、前記ゲート電極とは側面のみで接するバリア絶縁膜を形成する工程と、
前記導電体層の上部に第2の導電体層を形成する工程と、
前記第2の導電体層の上面に接する層間絶縁膜を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005262262A JP4528700B2 (ja) | 2005-09-09 | 2005-09-09 | 半導体装置及びその製造方法 |
US11/319,743 US7629638B2 (en) | 2005-09-09 | 2005-12-29 | Semiconductor memory device and manufacturing method thereof |
KR1020060086619A KR100824468B1 (ko) | 2005-09-09 | 2006-09-08 | 반도체 장치 및 그 제조 방법 |
US11/833,564 US7638832B2 (en) | 2005-09-09 | 2007-08-03 | Semiconductor memory device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005262262A JP4528700B2 (ja) | 2005-09-09 | 2005-09-09 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007073887A true JP2007073887A (ja) | 2007-03-22 |
JP4528700B2 JP4528700B2 (ja) | 2010-08-18 |
Family
ID=37854221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005262262A Expired - Fee Related JP4528700B2 (ja) | 2005-09-09 | 2005-09-09 | 半導体装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7629638B2 (ja) |
JP (1) | JP4528700B2 (ja) |
KR (1) | KR100824468B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7897500B2 (en) | 2008-01-30 | 2011-03-01 | Samsung Electronics Co., Ltd. | Methods for forming silicide conductors using substrate masking |
JP2011071332A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7948021B2 (en) | 2007-04-27 | 2011-05-24 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
US8043914B2 (en) | 2008-12-31 | 2011-10-25 | Samsung Electronics Co., Ltd. | Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006310454A (ja) * | 2005-04-27 | 2006-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4528700B2 (ja) | 2005-09-09 | 2010-08-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4364225B2 (ja) * | 2006-09-15 | 2009-11-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2008078298A (ja) | 2006-09-20 | 2008-04-03 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5059437B2 (ja) * | 2007-02-06 | 2012-10-24 | 株式会社Genusion | 不揮発性半導体記憶装置 |
JP2008294220A (ja) * | 2007-05-24 | 2008-12-04 | Toshiba Corp | 半導体メモリ装置 |
US8466508B2 (en) * | 2007-10-03 | 2013-06-18 | Macronix International Co., Ltd. | Non-volatile memory structure including stress material between stacked patterns |
KR101036744B1 (ko) * | 2009-01-29 | 2011-05-24 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조 방법 |
JP2011009447A (ja) * | 2009-06-25 | 2011-01-13 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US8325529B2 (en) * | 2009-08-03 | 2012-12-04 | Sandisk Technologies Inc. | Bit-line connections for non-volatile storage |
JP2011049237A (ja) * | 2009-08-25 | 2011-03-10 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2012204537A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US8673717B2 (en) * | 2012-07-18 | 2014-03-18 | International Business Machines Corporation | Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor |
US9224475B2 (en) * | 2012-08-23 | 2015-12-29 | Sandisk Technologies Inc. | Structures and methods for making NAND flash memory |
US9245898B2 (en) * | 2014-06-30 | 2016-01-26 | Sandisk Technologies Inc. | NAND flash memory integrated circuits and processes with controlled gate height |
US9224637B1 (en) | 2014-08-26 | 2015-12-29 | Sandisk Technologies Inc. | Bi-level dry etching scheme for transistor contacts |
TWI555213B (zh) * | 2014-09-04 | 2016-10-21 | 力晶科技股份有限公司 | 快閃記憶體閘極結構及其製作方法 |
US9613971B2 (en) | 2015-07-24 | 2017-04-04 | Sandisk Technologies Llc | Select gates with central open areas |
US9443862B1 (en) | 2015-07-24 | 2016-09-13 | Sandisk Technologies Llc | Select gates with select gate dielectric first |
US10355006B2 (en) | 2015-09-08 | 2019-07-16 | Toshiba Memory Corporation | Semiconductor storage device and manufacturing method thereof |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936358A (ja) * | 1995-07-19 | 1997-02-07 | Toshiba Corp | 半導体装置の製造方法 |
JPH09283751A (ja) * | 1996-04-11 | 1997-10-31 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH11317464A (ja) * | 1998-03-02 | 1999-11-16 | Sony Corp | 電気的書き換えが可能なメモリ素子及びその製造方法 |
JP2002231835A (ja) * | 2001-01-11 | 2002-08-16 | Samsung Electronics Co Ltd | 半導体装置及びその形成方法 |
JP2003347511A (ja) * | 2002-05-30 | 2003-12-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
JP2004128505A (ja) * | 2002-09-30 | 2004-04-22 | Samsung Electronics Co Ltd | 不揮発性メモリ装置及びその製造方法 |
JP2005116970A (ja) * | 2003-10-10 | 2005-04-28 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2005123524A (ja) * | 2003-10-20 | 2005-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007005654A (ja) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | 不揮発性半導体記憶装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010065796A (ko) | 1999-12-30 | 2001-07-11 | 박종섭 | 더블 스페이서를 이용한 복합 반도체장치의 제조 방법 |
KR100370242B1 (ko) * | 2000-12-26 | 2003-01-30 | 삼성전자 주식회사 | 불휘발성 메모리 소자의 제조방법 |
TW473915B (en) * | 2000-12-29 | 2002-01-21 | Applied Materials Inc | Manufacture method of silicon nitride layer |
KR100500448B1 (ko) | 2003-02-06 | 2005-07-14 | 삼성전자주식회사 | 선택적 디스포저블 스페이서 기술을 사용하는 반도체집적회로의 제조방법 및 그에 의해 제조된 반도체 집적회로 |
US6974743B2 (en) * | 2004-02-02 | 2005-12-13 | Infineon Technologies Ag | Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates |
JP4410075B2 (ja) * | 2004-09-28 | 2010-02-03 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4528700B2 (ja) | 2005-09-09 | 2010-08-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2005
- 2005-09-09 JP JP2005262262A patent/JP4528700B2/ja not_active Expired - Fee Related
- 2005-12-29 US US11/319,743 patent/US7629638B2/en not_active Expired - Fee Related
-
2006
- 2006-09-08 KR KR1020060086619A patent/KR100824468B1/ko not_active IP Right Cessation
-
2007
- 2007-08-03 US US11/833,564 patent/US7638832B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936358A (ja) * | 1995-07-19 | 1997-02-07 | Toshiba Corp | 半導体装置の製造方法 |
JPH09283751A (ja) * | 1996-04-11 | 1997-10-31 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH11317464A (ja) * | 1998-03-02 | 1999-11-16 | Sony Corp | 電気的書き換えが可能なメモリ素子及びその製造方法 |
JP2002231835A (ja) * | 2001-01-11 | 2002-08-16 | Samsung Electronics Co Ltd | 半導体装置及びその形成方法 |
JP2003347511A (ja) * | 2002-05-30 | 2003-12-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
JP2004128505A (ja) * | 2002-09-30 | 2004-04-22 | Samsung Electronics Co Ltd | 不揮発性メモリ装置及びその製造方法 |
JP2005116970A (ja) * | 2003-10-10 | 2005-04-28 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2005123524A (ja) * | 2003-10-20 | 2005-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007005654A (ja) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | 不揮発性半導体記憶装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7948021B2 (en) | 2007-04-27 | 2011-05-24 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
US8076205B2 (en) | 2007-04-27 | 2011-12-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
US8525249B2 (en) | 2007-04-27 | 2013-09-03 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
US8704287B2 (en) | 2007-04-27 | 2014-04-22 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
US7897500B2 (en) | 2008-01-30 | 2011-03-01 | Samsung Electronics Co., Ltd. | Methods for forming silicide conductors using substrate masking |
US8043914B2 (en) | 2008-12-31 | 2011-10-25 | Samsung Electronics Co., Ltd. | Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate |
JP2011071332A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
US7629638B2 (en) | 2009-12-08 |
US20070272972A1 (en) | 2007-11-29 |
US7638832B2 (en) | 2009-12-29 |
KR20070029582A (ko) | 2007-03-14 |
JP4528700B2 (ja) | 2010-08-18 |
US20070057316A1 (en) | 2007-03-15 |
KR100824468B1 (ko) | 2008-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4528700B2 (ja) | 半導体装置及びその製造方法 | |
US10290645B2 (en) | Three-dimensional memory device containing hydrogen diffusion barrier layer for CMOS under array architecture and method of making thereof | |
CN106024794B (zh) | 半导体器件及其制造方法 | |
US10515907B2 (en) | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | |
US7521318B2 (en) | Semiconductor device and method of manufacturing the same | |
US9461061B2 (en) | Vertical memory devices and methods of manufacturing the same | |
US10937797B2 (en) | Three-dimensional semiconductor memory devices | |
KR100921287B1 (ko) | 불휘발성 반도체 메모리 및 그 제조 방법 | |
US9419131B2 (en) | Semiconductor device having vertical channel transistor and method for fabricating the same | |
US8564046B2 (en) | Vertical semiconductor devices | |
US10515897B2 (en) | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | |
JPH10270575A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
US10354956B1 (en) | Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the same | |
KR20170061232A (ko) | 반도체 메모리 소자 | |
US7411239B2 (en) | Nand flash memory devices and methods of fabricating the same | |
JP3623400B2 (ja) | 半導体装置及びその製造方法 | |
US20090035907A1 (en) | Method of forming stacked gate structure for semiconductor memory | |
US7952133B2 (en) | Flash memory and method for manufacturing the same | |
WO2019221797A1 (en) | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | |
US20220216230A1 (en) | Semiconductor device and method for fabricating the same | |
US20230320076A1 (en) | Semiconductor memory device | |
US20100295115A1 (en) | Nonvolatile semiconductor memory device including nonvolatile memory cell | |
CN115707246A (zh) | 半导体装置和制造该半导体装置的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080528 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090714 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100414 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100511 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100607 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130611 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130611 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |