JP2007073631A5 - - Google Patents

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Publication number
JP2007073631A5
JP2007073631A5 JP2005256833A JP2005256833A JP2007073631A5 JP 2007073631 A5 JP2007073631 A5 JP 2007073631A5 JP 2005256833 A JP2005256833 A JP 2005256833A JP 2005256833 A JP2005256833 A JP 2005256833A JP 2007073631 A5 JP2007073631 A5 JP 2007073631A5
Authority
JP
Japan
Prior art keywords
face
film
semiconductor laser
laser device
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005256833A
Other languages
English (en)
Japanese (ja)
Other versions
JP4923489B2 (ja
JP2007073631A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005256833A external-priority patent/JP4923489B2/ja
Priority to JP2005256833A priority Critical patent/JP4923489B2/ja
Priority to TW095115596A priority patent/TWI299930B/zh
Priority to US11/439,276 priority patent/US7616673B2/en
Priority to DE102006040769.5A priority patent/DE102006040769B4/de
Priority to KR1020060084991A priority patent/KR100834867B1/ko
Publication of JP2007073631A publication Critical patent/JP2007073631A/ja
Publication of JP2007073631A5 publication Critical patent/JP2007073631A5/ja
Publication of JP4923489B2 publication Critical patent/JP4923489B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005256833A 2005-09-05 2005-09-05 半導体レーザ装置 Expired - Lifetime JP4923489B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005256833A JP4923489B2 (ja) 2005-09-05 2005-09-05 半導体レーザ装置
TW095115596A TWI299930B (en) 2005-09-05 2006-05-02 Semiconductor laser device
US11/439,276 US7616673B2 (en) 2005-09-05 2006-05-24 Semiconductor laser device
DE102006040769.5A DE102006040769B4 (de) 2005-09-05 2006-08-31 Halbleiterlaservorrichtung
KR1020060084991A KR100834867B1 (ko) 2005-09-05 2006-09-05 반도체 레이저장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005256833A JP4923489B2 (ja) 2005-09-05 2005-09-05 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2007073631A JP2007073631A (ja) 2007-03-22
JP2007073631A5 true JP2007073631A5 (https=) 2008-08-21
JP4923489B2 JP4923489B2 (ja) 2012-04-25

Family

ID=37763314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005256833A Expired - Lifetime JP4923489B2 (ja) 2005-09-05 2005-09-05 半導体レーザ装置

Country Status (5)

Country Link
US (1) US7616673B2 (https=)
JP (1) JP4923489B2 (https=)
KR (1) KR100834867B1 (https=)
DE (1) DE102006040769B4 (https=)
TW (1) TWI299930B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277625A (ja) * 2007-05-01 2008-11-13 Mitsubishi Electric Corp 半導体発光素子
JP2009182052A (ja) * 2008-01-29 2009-08-13 Sumitomo Electric Ind Ltd 半導体レーザ素子
CN103688212B (zh) 2011-05-21 2017-11-28 伊英克公司 电光显示器
JP2018006396A (ja) * 2016-06-28 2018-01-11 ウシオ電機株式会社 半導体レーザ素子および半導体レーザ装置
TWI810873B (zh) * 2022-03-29 2023-08-01 華信光電科技股份有限公司 具有高導熱低反射前鏡面之邊射型半導體雷射
CN118748350B (zh) * 2024-06-24 2025-02-25 陕西源杰半导体科技股份有限公司 一种非气密应用的半导体激光器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261384A (ja) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp 高出力半導体レ−ザ装置
JP2572868B2 (ja) 1990-03-09 1997-01-16 三菱電機株式会社 半導体レーザ
JP3259585B2 (ja) 1995-03-16 2002-02-25 日本鋼管株式会社 耐もらい錆性に優れた有機複合被覆鋼板
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
JP2000068586A (ja) 1998-08-20 2000-03-03 Hitachi Ltd 光モジュールおよび光伝送装置
JP2000124554A (ja) * 1998-10-13 2000-04-28 Hitachi Cable Ltd 高消光比半導体光増幅器及びそれを用いた光スイッチ
JP2001119096A (ja) 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
KR100386593B1 (ko) * 2001-04-26 2003-06-09 엘지전자 주식회사 반도체 레이저 다이오드
JP2003110187A (ja) * 2001-10-02 2003-04-11 Rohm Co Ltd 半導体レーザおよびその製造方法
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP3856300B2 (ja) * 2002-03-11 2006-12-13 ソニー株式会社 半導体レーザ素子
JP3770386B2 (ja) * 2002-03-29 2006-04-26 ユーディナデバイス株式会社 光半導体装置及びその製造方法
JP2004281686A (ja) * 2003-03-14 2004-10-07 Sumitomo Electric Ind Ltd 半導体発光デバイス及びその製造方法
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4287702B2 (ja) * 2003-06-04 2009-07-01 シャープ株式会社 酸化物半導体発光素子
JP2005175111A (ja) * 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法

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