DE102006040769B4 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung Download PDF

Info

Publication number
DE102006040769B4
DE102006040769B4 DE102006040769.5A DE102006040769A DE102006040769B4 DE 102006040769 B4 DE102006040769 B4 DE 102006040769B4 DE 102006040769 A DE102006040769 A DE 102006040769A DE 102006040769 B4 DE102006040769 B4 DE 102006040769B4
Authority
DE
Germany
Prior art keywords
layer
reflectance
semiconductor laser
thickness
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102006040769.5A
Other languages
German (de)
English (en)
Other versions
DE102006040769A1 (de
Inventor
Hiromasu Matsuoka
Yasuyuki Nakagawa
Toshihiko Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102006040769A1 publication Critical patent/DE102006040769A1/de
Application granted granted Critical
Publication of DE102006040769B4 publication Critical patent/DE102006040769B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE102006040769.5A 2005-09-05 2006-08-31 Halbleiterlaservorrichtung Active DE102006040769B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-256833 2005-09-05
JP2005256833A JP4923489B2 (ja) 2005-09-05 2005-09-05 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE102006040769A1 DE102006040769A1 (de) 2007-03-15
DE102006040769B4 true DE102006040769B4 (de) 2018-06-21

Family

ID=37763314

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006040769.5A Active DE102006040769B4 (de) 2005-09-05 2006-08-31 Halbleiterlaservorrichtung

Country Status (5)

Country Link
US (1) US7616673B2 (https=)
JP (1) JP4923489B2 (https=)
KR (1) KR100834867B1 (https=)
DE (1) DE102006040769B4 (https=)
TW (1) TWI299930B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277625A (ja) * 2007-05-01 2008-11-13 Mitsubishi Electric Corp 半導体発光素子
JP2009182052A (ja) * 2008-01-29 2009-08-13 Sumitomo Electric Ind Ltd 半導体レーザ素子
CN103688212B (zh) 2011-05-21 2017-11-28 伊英克公司 电光显示器
JP2018006396A (ja) * 2016-06-28 2018-01-11 ウシオ電機株式会社 半導体レーザ素子および半導体レーザ装置
TWI810873B (zh) * 2022-03-29 2023-08-01 華信光電科技股份有限公司 具有高導熱低反射前鏡面之邊射型半導體雷射
CN118748350B (zh) * 2024-06-24 2025-02-25 陕西源杰半导体科技股份有限公司 一种非气密应用的半导体激光器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259585B2 (ja) 1995-03-16 2002-02-25 日本鋼管株式会社 耐もらい錆性に優れた有機複合被覆鋼板
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
US20030156614A1 (en) 2002-02-19 2003-08-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for manufacturing the same
US6618409B1 (en) 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
US20030210722A1 (en) 2002-03-11 2003-11-13 Takahiro Arakida Semiconductor laser device
US20040238828A1 (en) 2003-03-14 2004-12-02 Sumitomo Electric Industries, Ltd. Semiconductor optical integrated device
US20050127383A1 (en) * 2003-12-10 2005-06-16 Takeshi Kikawa Laser diode and manufacturing method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261384A (ja) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp 高出力半導体レ−ザ装置
JP2572868B2 (ja) 1990-03-09 1997-01-16 三菱電機株式会社 半導体レーザ
JP2000068586A (ja) 1998-08-20 2000-03-03 Hitachi Ltd 光モジュールおよび光伝送装置
JP2000124554A (ja) * 1998-10-13 2000-04-28 Hitachi Cable Ltd 高消光比半導体光増幅器及びそれを用いた光スイッチ
JP2001119096A (ja) 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
KR100386593B1 (ko) * 2001-04-26 2003-06-09 엘지전자 주식회사 반도체 레이저 다이오드
JP2003110187A (ja) * 2001-10-02 2003-04-11 Rohm Co Ltd 半導体レーザおよびその製造方法
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP3770386B2 (ja) * 2002-03-29 2006-04-26 ユーディナデバイス株式会社 光半導体装置及びその製造方法
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4287702B2 (ja) * 2003-06-04 2009-07-01 シャープ株式会社 酸化物半導体発光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259585B2 (ja) 1995-03-16 2002-02-25 日本鋼管株式会社 耐もらい錆性に優れた有機複合被覆鋼板
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
US6618409B1 (en) 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
US20030156614A1 (en) 2002-02-19 2003-08-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for manufacturing the same
US20030210722A1 (en) 2002-03-11 2003-11-13 Takahiro Arakida Semiconductor laser device
US20040238828A1 (en) 2003-03-14 2004-12-02 Sumitomo Electric Industries, Ltd. Semiconductor optical integrated device
US20050127383A1 (en) * 2003-12-10 2005-06-16 Takeshi Kikawa Laser diode and manufacturing method thereof

Also Published As

Publication number Publication date
US7616673B2 (en) 2009-11-10
TW200713722A (en) 2007-04-01
KR100834867B1 (ko) 2008-06-03
JP4923489B2 (ja) 2012-04-25
US20070053398A1 (en) 2007-03-08
JP2007073631A (ja) 2007-03-22
DE102006040769A1 (de) 2007-03-15
TWI299930B (en) 2008-08-11
KR20070026271A (ko) 2007-03-08

Similar Documents

Publication Publication Date Title
DE19964228B4 (de) Verfahren zur Herstellung eines Reflexionsfilms und Herstellung optischer Vorrichtungen die einen Reflexionsfilm verwenden
EP2561386B1 (de) Flächenlichtleiter und flächenstrahler
EP2149160B1 (de) Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente
EP1906462B1 (de) Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
EP2149163B9 (de) Lumineszenzdiodenchip mit winkelfilterelement
DE112012003902B4 (de) Verfahren zur Herstellung einer durch Abblättern abzutrennenden Verbundstruktur, zugehörige Verbundstruktur und Verfahren zum Trennen derselben
EP2628193A1 (de) Konversionsbauteil
EP2510558B1 (de) Optoelektronisches halbleiterbauteil
DE102011054954A1 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
WO2016087656A1 (de) Konversionselement, optoelektronisches halbleiterbauelement und verfahren zur herstellung von konversionselementen
DE102004040277B4 (de) Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
DE102006040769B4 (de) Halbleiterlaservorrichtung
DE102004019993A1 (de) Halbleiterlaservorrichtung
DE10222852A1 (de) Streulichtschneidstruktur für optische Vorrichtung
EP2232593A2 (de) Polarisierte strahlung emittierendes halbleiterbauelement
DE112020000701B4 (de) Dielektrische filmbeschichtung für keramische vollkonversionsplättchen
WO2014048883A1 (de) Optoelektronisches bauteil
DE112020001069T5 (de) Optoelektronische halbleiterlichtquelle und bragg-spiegel
DE3725871C2 (de) Element mit hohem Emissionsvermögen für Infrarot-Strahlung
DE102013222702B4 (de) Optoelektronisches Bauelement, optoelektronische Anordnung, Verfahren zum Herstellen eines optischen Elements und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE112016005214B4 (de) Strahlungsemittierender Halbleiterchip, optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip und Verfahren zur Beschichtung eines strahlungsemittierenden Halbleiterchips
DE112016000537B4 (de) Vorrichtung zur Konversion der Wellenlänge einer elektromagnetischen Strahlung
CN116941052A (zh) 用于发光器件的横向光收集和波长转换
DE102007057669A1 (de) Mischfarbige Strahlung emittierendes Halbleiterbauelement
DE112017006583T5 (de) Wellenlängenkonverter und Wellenlängenkonverterelement

Legal Events

Date Code Title Description
R012 Request for examination validly filed
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R016 Response to examination communication
R084 Declaration of willingness to licence
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final