TWI299930B - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- TWI299930B TWI299930B TW095115596A TW95115596A TWI299930B TW I299930 B TWI299930 B TW I299930B TW 095115596 A TW095115596 A TW 095115596A TW 95115596 A TW95115596 A TW 95115596A TW I299930 B TWI299930 B TW I299930B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- semiconductor laser
- reflectance
- layer
- face
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 89
- 230000001681 protective effect Effects 0.000 claims description 23
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 18
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 357
- 239000010410 layer Substances 0.000 description 88
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 11
- 239000004575 stone Substances 0.000 description 10
- 238000000985 reflectance spectrum Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005256833A JP4923489B2 (ja) | 2005-09-05 | 2005-09-05 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200713722A TW200713722A (en) | 2007-04-01 |
| TWI299930B true TWI299930B (en) | 2008-08-11 |
Family
ID=37763314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095115596A TWI299930B (en) | 2005-09-05 | 2006-05-02 | Semiconductor laser device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7616673B2 (https=) |
| JP (1) | JP4923489B2 (https=) |
| KR (1) | KR100834867B1 (https=) |
| DE (1) | DE102006040769B4 (https=) |
| TW (1) | TWI299930B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI810873B (zh) * | 2022-03-29 | 2023-08-01 | 華信光電科技股份有限公司 | 具有高導熱低反射前鏡面之邊射型半導體雷射 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277625A (ja) * | 2007-05-01 | 2008-11-13 | Mitsubishi Electric Corp | 半導体発光素子 |
| JP2009182052A (ja) * | 2008-01-29 | 2009-08-13 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
| CN103688212B (zh) | 2011-05-21 | 2017-11-28 | 伊英克公司 | 电光显示器 |
| JP2018006396A (ja) * | 2016-06-28 | 2018-01-11 | ウシオ電機株式会社 | 半導体レーザ素子および半導体レーザ装置 |
| CN118748350B (zh) * | 2024-06-24 | 2025-02-25 | 陕西源杰半导体科技股份有限公司 | 一种非气密应用的半导体激光器 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6261384A (ja) * | 1985-09-11 | 1987-03-18 | Mitsubishi Electric Corp | 高出力半導体レ−ザ装置 |
| JP2572868B2 (ja) | 1990-03-09 | 1997-01-16 | 三菱電機株式会社 | 半導体レーザ |
| JP3259585B2 (ja) | 1995-03-16 | 2002-02-25 | 日本鋼管株式会社 | 耐もらい錆性に優れた有機複合被覆鋼板 |
| US6396864B1 (en) * | 1998-03-13 | 2002-05-28 | Jds Uniphase Corporation | Thermally conductive coatings for light emitting devices |
| JP2000068586A (ja) | 1998-08-20 | 2000-03-03 | Hitachi Ltd | 光モジュールおよび光伝送装置 |
| JP2000124554A (ja) * | 1998-10-13 | 2000-04-28 | Hitachi Cable Ltd | 高消光比半導体光増幅器及びそれを用いた光スイッチ |
| JP2001119096A (ja) | 1999-10-18 | 2001-04-27 | Fuji Photo Film Co Ltd | 半導体レーザー装置 |
| JP2001257413A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Electronic Engineering Corp | 半導体レーザ装置及びその製造方法 |
| US6618409B1 (en) * | 2000-05-03 | 2003-09-09 | Corning Incorporated | Passivation of semiconductor laser facets |
| KR100386593B1 (ko) * | 2001-04-26 | 2003-06-09 | 엘지전자 주식회사 | 반도체 레이저 다이오드 |
| JP2003110187A (ja) * | 2001-10-02 | 2003-04-11 | Rohm Co Ltd | 半導体レーザおよびその製造方法 |
| JP2003243764A (ja) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
| JP2004088049A (ja) * | 2002-03-08 | 2004-03-18 | Mitsubishi Electric Corp | 光半導体装置 |
| JP3856300B2 (ja) * | 2002-03-11 | 2006-12-13 | ソニー株式会社 | 半導体レーザ素子 |
| JP3770386B2 (ja) * | 2002-03-29 | 2006-04-26 | ユーディナデバイス株式会社 | 光半導体装置及びその製造方法 |
| JP2004281686A (ja) * | 2003-03-14 | 2004-10-07 | Sumitomo Electric Ind Ltd | 半導体発光デバイス及びその製造方法 |
| JP4097552B2 (ja) * | 2003-03-27 | 2008-06-11 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP2004327581A (ja) * | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| JP4287702B2 (ja) * | 2003-06-04 | 2009-07-01 | シャープ株式会社 | 酸化物半導体発光素子 |
| JP2005175111A (ja) * | 2003-12-10 | 2005-06-30 | Hitachi Ltd | 半導体レーザ及びその製造方法 |
-
2005
- 2005-09-05 JP JP2005256833A patent/JP4923489B2/ja not_active Expired - Lifetime
-
2006
- 2006-05-02 TW TW095115596A patent/TWI299930B/zh active
- 2006-05-24 US US11/439,276 patent/US7616673B2/en active Active
- 2006-08-31 DE DE102006040769.5A patent/DE102006040769B4/de active Active
- 2006-09-05 KR KR1020060084991A patent/KR100834867B1/ko active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI810873B (zh) * | 2022-03-29 | 2023-08-01 | 華信光電科技股份有限公司 | 具有高導熱低反射前鏡面之邊射型半導體雷射 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102006040769B4 (de) | 2018-06-21 |
| US7616673B2 (en) | 2009-11-10 |
| TW200713722A (en) | 2007-04-01 |
| KR100834867B1 (ko) | 2008-06-03 |
| JP4923489B2 (ja) | 2012-04-25 |
| US20070053398A1 (en) | 2007-03-08 |
| JP2007073631A (ja) | 2007-03-22 |
| DE102006040769A1 (de) | 2007-03-15 |
| KR20070026271A (ko) | 2007-03-08 |
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