KR100834867B1 - 반도체 레이저장치 - Google Patents

반도체 레이저장치 Download PDF

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Publication number
KR100834867B1
KR100834867B1 KR1020060084991A KR20060084991A KR100834867B1 KR 100834867 B1 KR100834867 B1 KR 100834867B1 KR 1020060084991 A KR1020060084991 A KR 1020060084991A KR 20060084991 A KR20060084991 A KR 20060084991A KR 100834867 B1 KR100834867 B1 KR 100834867B1
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KR
South Korea
Prior art keywords
film
semiconductor laser
face
reflectance
layer
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KR1020060084991A
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English (en)
Korean (ko)
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KR20070026271A (ko
Inventor
히로마스 마쓰오카
야스유키 나카가와
토시히코 시가
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20070026271A publication Critical patent/KR20070026271A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020060084991A 2005-09-05 2006-09-05 반도체 레이저장치 Active KR100834867B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005256833A JP4923489B2 (ja) 2005-09-05 2005-09-05 半導体レーザ装置
JPJP-P-2005-00256833 2005-09-05

Publications (2)

Publication Number Publication Date
KR20070026271A KR20070026271A (ko) 2007-03-08
KR100834867B1 true KR100834867B1 (ko) 2008-06-03

Family

ID=37763314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060084991A Active KR100834867B1 (ko) 2005-09-05 2006-09-05 반도체 레이저장치

Country Status (5)

Country Link
US (1) US7616673B2 (https=)
JP (1) JP4923489B2 (https=)
KR (1) KR100834867B1 (https=)
DE (1) DE102006040769B4 (https=)
TW (1) TWI299930B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277625A (ja) * 2007-05-01 2008-11-13 Mitsubishi Electric Corp 半導体発光素子
JP2009182052A (ja) * 2008-01-29 2009-08-13 Sumitomo Electric Ind Ltd 半導体レーザ素子
CN103688212B (zh) 2011-05-21 2017-11-28 伊英克公司 电光显示器
JP2018006396A (ja) * 2016-06-28 2018-01-11 ウシオ電機株式会社 半導体レーザ素子および半導体レーザ装置
TWI810873B (zh) * 2022-03-29 2023-08-01 華信光電科技股份有限公司 具有高導熱低反射前鏡面之邊射型半導體雷射
CN118748350B (zh) * 2024-06-24 2025-02-25 陕西源杰半导体科技股份有限公司 一种非气密应用的半导体激光器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020083243A (ko) * 2001-04-26 2002-11-02 엘지전자 주식회사 반도체 레이저 다이오드
KR20030074307A (ko) * 2002-03-08 2003-09-19 미쓰비시덴키 가부시키가이샤 광 반도체장치
KR20040092422A (ko) * 2003-04-23 2004-11-03 미쓰비시덴키 가부시키가이샤 반도체 레이저장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261384A (ja) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp 高出力半導体レ−ザ装置
JP2572868B2 (ja) 1990-03-09 1997-01-16 三菱電機株式会社 半導体レーザ
JP3259585B2 (ja) 1995-03-16 2002-02-25 日本鋼管株式会社 耐もらい錆性に優れた有機複合被覆鋼板
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
JP2000068586A (ja) 1998-08-20 2000-03-03 Hitachi Ltd 光モジュールおよび光伝送装置
JP2000124554A (ja) * 1998-10-13 2000-04-28 Hitachi Cable Ltd 高消光比半導体光増幅器及びそれを用いた光スイッチ
JP2001119096A (ja) 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
JP2003110187A (ja) * 2001-10-02 2003-04-11 Rohm Co Ltd 半導体レーザおよびその製造方法
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP3856300B2 (ja) * 2002-03-11 2006-12-13 ソニー株式会社 半導体レーザ素子
JP3770386B2 (ja) * 2002-03-29 2006-04-26 ユーディナデバイス株式会社 光半導体装置及びその製造方法
JP2004281686A (ja) * 2003-03-14 2004-10-07 Sumitomo Electric Ind Ltd 半導体発光デバイス及びその製造方法
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4287702B2 (ja) * 2003-06-04 2009-07-01 シャープ株式会社 酸化物半導体発光素子
JP2005175111A (ja) * 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020083243A (ko) * 2001-04-26 2002-11-02 엘지전자 주식회사 반도체 레이저 다이오드
KR20030074307A (ko) * 2002-03-08 2003-09-19 미쓰비시덴키 가부시키가이샤 광 반도체장치
KR20040092422A (ko) * 2003-04-23 2004-11-03 미쓰비시덴키 가부시키가이샤 반도체 레이저장치

Also Published As

Publication number Publication date
DE102006040769B4 (de) 2018-06-21
US7616673B2 (en) 2009-11-10
TW200713722A (en) 2007-04-01
JP4923489B2 (ja) 2012-04-25
US20070053398A1 (en) 2007-03-08
JP2007073631A (ja) 2007-03-22
DE102006040769A1 (de) 2007-03-15
TWI299930B (en) 2008-08-11
KR20070026271A (ko) 2007-03-08

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