JP2010226056A5 - - Google Patents
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- Publication number
- JP2010226056A5 JP2010226056A5 JP2009074678A JP2009074678A JP2010226056A5 JP 2010226056 A5 JP2010226056 A5 JP 2010226056A5 JP 2009074678 A JP2009074678 A JP 2009074678A JP 2009074678 A JP2009074678 A JP 2009074678A JP 2010226056 A5 JP2010226056 A5 JP 2010226056A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- interface
- light
- electric field
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009074678A JP2010226056A (ja) | 2009-03-25 | 2009-03-25 | 半導体レーザ装置 |
| US12/572,323 US8094696B2 (en) | 2009-03-25 | 2009-10-02 | Semiconductor laser device |
| CN200910253156A CN101847827A (zh) | 2009-03-25 | 2009-12-04 | 半导体激光装置 |
| US13/309,120 US8233514B2 (en) | 2009-03-25 | 2011-12-01 | Semiconductor laser device |
| US13/533,008 US20120269219A1 (en) | 2009-03-25 | 2012-06-26 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009074678A JP2010226056A (ja) | 2009-03-25 | 2009-03-25 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010226056A JP2010226056A (ja) | 2010-10-07 |
| JP2010226056A5 true JP2010226056A5 (https=) | 2012-03-08 |
Family
ID=42772331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009074678A Pending JP2010226056A (ja) | 2009-03-25 | 2009-03-25 | 半導体レーザ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US8094696B2 (https=) |
| JP (1) | JP2010226056A (https=) |
| CN (1) | CN101847827A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5597029B2 (ja) * | 2010-05-27 | 2014-10-01 | 住友電気工業株式会社 | 波長可変半導体レーザ |
| DE102011054954A1 (de) * | 2011-10-31 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser |
| CN102496851B (zh) * | 2011-11-24 | 2015-11-25 | 上海华虹宏力半导体制造有限公司 | 激光器及其形成方法、谐振腔及其形成方法 |
| JP2018006396A (ja) * | 2016-06-28 | 2018-01-11 | ウシオ電機株式会社 | 半導体レーザ素子および半導体レーザ装置 |
| JP2022021054A (ja) * | 2020-07-21 | 2022-02-02 | ソニーグループ株式会社 | 半導体レーザ素子 |
| US11909175B2 (en) * | 2021-01-13 | 2024-02-20 | Apple Inc. | Horizontal cavity surface-emitting laser (HCSEL) monolithically integrated with a photodetector |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130187A (ja) | 1983-12-17 | 1985-07-11 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPS61207091A (ja) | 1985-03-11 | 1986-09-13 | Sharp Corp | 半導体レ−ザ素子 |
| JPH0824209B2 (ja) | 1987-03-10 | 1996-03-06 | 古河電気工業株式会社 | 化合物半導体レ−ザ |
| JPH0621265Y2 (ja) | 1987-04-13 | 1994-06-01 | 三洋電機株式会社 | 半導体レ−ザ装置 |
| JPH0418784A (ja) | 1990-02-13 | 1992-01-22 | Fuji Electric Co Ltd | 半導体レーザ素子の保護膜 |
| JPH0745910A (ja) | 1993-07-30 | 1995-02-14 | Ricoh Co Ltd | 半導体レーザー |
| JP3739107B2 (ja) | 1995-04-26 | 2006-01-25 | シャープ株式会社 | 誘電体多層反射膜 |
| JP2967757B2 (ja) | 1997-04-11 | 1999-10-25 | 日本電気株式会社 | 半導体レーザ装置及びその製造方法 |
| JP2008227169A (ja) * | 2007-03-13 | 2008-09-25 | Nec Electronics Corp | 半導体レーザ素子 |
-
2009
- 2009-03-25 JP JP2009074678A patent/JP2010226056A/ja active Pending
- 2009-10-02 US US12/572,323 patent/US8094696B2/en not_active Expired - Fee Related
- 2009-12-04 CN CN200910253156A patent/CN101847827A/zh active Pending
-
2011
- 2011-12-01 US US13/309,120 patent/US8233514B2/en not_active Expired - Fee Related
-
2012
- 2012-06-26 US US13/533,008 patent/US20120269219A1/en not_active Abandoned
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