JP2013505560A5 - - Google Patents

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Publication number
JP2013505560A5
JP2013505560A5 JP2012529204A JP2012529204A JP2013505560A5 JP 2013505560 A5 JP2013505560 A5 JP 2013505560A5 JP 2012529204 A JP2012529204 A JP 2012529204A JP 2012529204 A JP2012529204 A JP 2012529204A JP 2013505560 A5 JP2013505560 A5 JP 2013505560A5
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JP
Japan
Prior art keywords
type doped
doped layer
semiconductor laser
layer
waveguide
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JP2012529204A
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English (en)
Japanese (ja)
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JP2013505560A (ja
JP5800815B2 (ja
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Priority claimed from DE102009041934A external-priority patent/DE102009041934A1/de
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Publication of JP2013505560A5 publication Critical patent/JP2013505560A5/ja
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Publication of JP5800815B2 publication Critical patent/JP5800815B2/ja
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JP2012529204A 2009-09-17 2010-09-01 端面発光半導体レーザー Active JP5800815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009041934A DE102009041934A1 (de) 2009-09-17 2009-09-17 Kantenemittierender Halbleiterlaser
DE102009041934.9 2009-09-17
PCT/EP2010/062812 WO2011032841A2 (de) 2009-09-17 2010-09-01 Kantenemittierender halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2013505560A JP2013505560A (ja) 2013-02-14
JP2013505560A5 true JP2013505560A5 (https=) 2015-08-13
JP5800815B2 JP5800815B2 (ja) 2015-10-28

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ID=43603423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012529204A Active JP5800815B2 (ja) 2009-09-17 2010-09-01 端面発光半導体レーザー

Country Status (8)

Country Link
US (2) US8737444B2 (https=)
EP (1) EP2478601B1 (https=)
JP (1) JP5800815B2 (https=)
KR (1) KR20120075468A (https=)
CN (1) CN102498625B (https=)
DE (1) DE102009041934A1 (https=)
TW (1) TW201134036A (https=)
WO (1) WO2011032841A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
JP6123427B2 (ja) * 2013-03-29 2017-05-10 三菱電機株式会社 半導体レーザ装置
US9705285B2 (en) * 2014-01-31 2017-07-11 Technische Universität Berlin Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same
CN116581642B (zh) * 2023-07-11 2023-11-07 度亘核芯光电技术(苏州)有限公司 半导体激光器外延结构及其制备方法、半导体激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04781A (ja) * 1990-04-17 1992-01-06 Mitsubishi Electric Corp 半導体レーザの構造
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
JP2001332814A (ja) * 2000-05-25 2001-11-30 Nec Corp 半導体レーザ
KR100597532B1 (ko) * 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
JP2003060301A (ja) * 2002-06-17 2003-02-28 Nec Corp 半導体レーザ
US20050201439A1 (en) * 2002-09-06 2005-09-15 Mitsubishi Chemical Corporation Semiconductor light emitting device and semiconductor light emitting device module
GB0306279D0 (en) * 2003-03-19 2003-04-23 Bookham Technology Plc High power semiconductor laser with large optical superlattice waveguide
JP2005268298A (ja) * 2004-03-16 2005-09-29 Anritsu Corp 半導体レーザ
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR20070080696A (ko) 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
DE102007051315B4 (de) * 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP5002391B2 (ja) * 2007-09-26 2012-08-15 三菱電機株式会社 半導体レーザ装置
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法

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