KR20120075468A - 에지 방출 반도체 레이저 - Google Patents

에지 방출 반도체 레이저 Download PDF

Info

Publication number
KR20120075468A
KR20120075468A KR1020127009496A KR20127009496A KR20120075468A KR 20120075468 A KR20120075468 A KR 20120075468A KR 1020127009496 A KR1020127009496 A KR 1020127009496A KR 20127009496 A KR20127009496 A KR 20127009496A KR 20120075468 A KR20120075468 A KR 20120075468A
Authority
KR
South Korea
Prior art keywords
layer
type doped
semiconductor laser
waveguide
undoped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127009496A
Other languages
English (en)
Korean (ko)
Inventor
알바로 고메즈-이글리시아스
구엔터 지로엔닌거
크리스티안 라우어
하랄드 코에니그
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120075468A publication Critical patent/KR20120075468A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
KR1020127009496A 2009-09-17 2010-09-01 에지 방출 반도체 레이저 Ceased KR20120075468A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009041934A DE102009041934A1 (de) 2009-09-17 2009-09-17 Kantenemittierender Halbleiterlaser
DE102009041934.9 2009-09-17

Publications (1)

Publication Number Publication Date
KR20120075468A true KR20120075468A (ko) 2012-07-06

Family

ID=43603423

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127009496A Ceased KR20120075468A (ko) 2009-09-17 2010-09-01 에지 방출 반도체 레이저

Country Status (8)

Country Link
US (2) US8737444B2 (https=)
EP (1) EP2478601B1 (https=)
JP (1) JP5800815B2 (https=)
KR (1) KR20120075468A (https=)
CN (1) CN102498625B (https=)
DE (1) DE102009041934A1 (https=)
TW (1) TW201134036A (https=)
WO (1) WO2011032841A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
JP6123427B2 (ja) * 2013-03-29 2017-05-10 三菱電機株式会社 半導体レーザ装置
US9705285B2 (en) * 2014-01-31 2017-07-11 Technische Universität Berlin Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same
CN116581642B (zh) * 2023-07-11 2023-11-07 度亘核芯光电技术(苏州)有限公司 半导体激光器外延结构及其制备方法、半导体激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04781A (ja) * 1990-04-17 1992-01-06 Mitsubishi Electric Corp 半導体レーザの構造
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
JP2001332814A (ja) * 2000-05-25 2001-11-30 Nec Corp 半導体レーザ
KR100597532B1 (ko) * 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
JP2003060301A (ja) * 2002-06-17 2003-02-28 Nec Corp 半導体レーザ
US20050201439A1 (en) * 2002-09-06 2005-09-15 Mitsubishi Chemical Corporation Semiconductor light emitting device and semiconductor light emitting device module
GB0306279D0 (en) * 2003-03-19 2003-04-23 Bookham Technology Plc High power semiconductor laser with large optical superlattice waveguide
JP2005268298A (ja) * 2004-03-16 2005-09-29 Anritsu Corp 半導体レーザ
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR20070080696A (ko) 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
DE102007051315B4 (de) * 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP5002391B2 (ja) * 2007-09-26 2012-08-15 三菱電機株式会社 半導体レーザ装置
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法

Also Published As

Publication number Publication date
CN102498625B (zh) 2014-04-23
EP2478601B1 (de) 2017-12-06
WO2011032841A2 (de) 2011-03-24
DE102009041934A1 (de) 2011-03-24
US8976831B2 (en) 2015-03-10
US8737444B2 (en) 2014-05-27
TW201134036A (en) 2011-10-01
EP2478601A2 (de) 2012-07-25
JP2013505560A (ja) 2013-02-14
WO2011032841A3 (de) 2012-03-08
CN102498625A (zh) 2012-06-13
US20120263205A1 (en) 2012-10-18
US20140211821A1 (en) 2014-07-31
JP5800815B2 (ja) 2015-10-28

Similar Documents

Publication Publication Date Title
US8897329B2 (en) Group III nitride-based green-laser diodes and waveguide structures thereof
CN102246369B (zh) 包括多个mqw区的mqw激光器结构
US7830938B2 (en) Laser diode
JP5795010B2 (ja) オプトエレクトロニクス半導体チップ
US20120213240A1 (en) Strain balanced laser diode
US9373937B2 (en) Semiconductor laser with improved current conduction
JP2014508420A5 (https=)
JP7716389B2 (ja) 半導体レーザ装置及び半導体レーザ装置の製造方法
EP2346124B1 (en) Semiconductor laser element
JP6807691B2 (ja) 半導体光素子、及びその製造方法
KR20120075468A (ko) 에지 방출 반도체 레이저
US10454249B2 (en) Semiconductor laser device
US8660160B2 (en) Semiconductor laser element and method of manufacturing the same
US20120195337A1 (en) Semiconductor laser
JP4983791B2 (ja) 光半導体素子
US20230369827A1 (en) Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component
KR20230161444A (ko) 반도체 광전자 디바이스

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20120413

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150805

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160706

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20170131

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20160706

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I