JP5239568B2 - 半導体受光素子 - Google Patents
半導体受光素子 Download PDFInfo
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- JP5239568B2 JP5239568B2 JP2008180151A JP2008180151A JP5239568B2 JP 5239568 B2 JP5239568 B2 JP 5239568B2 JP 2008180151 A JP2008180151 A JP 2008180151A JP 2008180151 A JP2008180151 A JP 2008180151A JP 5239568 B2 JP5239568 B2 JP 5239568B2
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 230000003287 optical effect Effects 0.000 claims description 40
- 239000012788 optical film Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 23
- 230000031700 light absorption Effects 0.000 claims description 22
- 230000014509 gene expression Effects 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
図1は、本発明の実施の形態1に係る半導体受光素子を示す断面図である。この半導体受光素子は裏面入射型の共振型フォトダイオードである。
Lopt1=nλ/4 ・・・(1)
ここで、nは整数である。これにより、図9のPDでは、ある特定の波長λ1のみで高い量子効率が得られる。
Lopt1≠Lopt2 ・・・(2)
これにより、本実施の形態では、波長λ1とは異なる波長λ2でも量子効率のピークを持つ。このように量子効率のピーク波長が2つに分散されるため、量子効率の波長依存性を低減することができる。具体的には、第2の光学膜厚Lopt2は、第1の光学膜厚Lopt1の数分の1から数倍の範囲である。
Lopt1=(2n−1)λ/4 ・・・(3)
Lopt2=2nλ/4 ・・・(4)
Lopt1=2nλ/4 ・・・(5)
Lopt2=(2n−1)λ/4 ・・・(6)
N1<N2 ・・・(7)
これにより、第1の共振モードによる量子効率改善効果が損なわれないため、高い量子効率を得ることができる。
図3は、本発明の実施の形態2に係る半導体受光素子を示す断面図である。n型InP基板10と第1の多層反射層12の間に、n型InP基板10側から順番に、第3の多層反射層30及び第2の光共振層32が更に形成されている。第2の光共振層32は、第1〜第3の多層反射層12,16,30を構成する各半導体層よりも厚い。その他の構成は実施の形態1と同様である。
Lopt1≠Lopt2≠Lopt3 ・・・(8)
これにより、本実施の形態では、波長λ1,λ2とは異なる波長λ3でも量子効率のピークを持つ。このように量子効率のピーク波長が3つに分散されるため、より広い波長範囲で量子効率の波長依存性を低減することができる。
図4は、本発明の実施の形態3に係る半導体受光素子を示す断面図である。実施の形態1の第1の光共振層14を、バンドギャップ波長が入射光の波長よりも長い第1の光共振層34に置き換えたものである。この吸収性の第1の光共振層34で発生した電子と正孔を光電流として取り出せば、より高い量子効率を得ることができる。
図5は、本発明の実施の形態4に係る半導体受光素子を示す断面図である。n型InP基板10の下面に、n型InP基板10側から順番に、第1の多層反射層12、第1の光共振層14、第2の多層反射層16、光吸収層18、第3の多層反射層36、第2の光共振層38及びアノード電極22(反射膜)が形成されている。その他の構成は実施の形態1と同様である。
図6は、本発明の実施の形態5に係る半導体受光素子を示す断面図である。この半導体受光素子は表面入射型の共振型フォトダイオードである。
図7は、本発明の実施の形態6に係る半導体受光素子を示す断面図である。第3の多層反射層52が無く、光共振層50の上面は空気に晒されている点以外は実施の形態5と同じである。空気と光共振層50は屈折率が異なるため、光共振層50の上面(光入射面)で光が反射し、第3の多層反射層52と同様に機能する。なお、光共振層50の上面に絶縁膜等の反射膜や反射抑制膜を設けて反射率を調整してもよい。
12,40 第1の多層反射層
14,34 第1の光共振層
16,48 第2の多層反射層
18,44 光吸収層
22 アノード電極(反射膜)
26 反射防止膜
30,36,52 第3の多層反射層
32,38 第2の光共振層
50 光共振層
Claims (3)
- 半導体基板の下面に、前記半導体基板側から順番に、第1の多層反射層、第1の光共振層、第2の多層反射層、光吸収層及び反射膜が形成され、
前記半導体基板の上面に反射防止膜が形成され、
前記第1の光共振層は、前記第1,第2の多層反射層を構成する各半導体層よりも厚く、
前記第2の多層反射層と前記反射膜の間に有る膜の光学膜厚を第1の光学膜厚とし、前記第1の光共振層の光学膜厚を第2の光学膜厚とし、
nを整数、λを入射光の波長とすると、前記第1の光学膜厚は(2n−1)λ/4であり、前記第2の光学膜厚は2nλ/4であることを特徴とする半導体受光素子。 - 半導体基板の下面に、前記半導体基板側から順番に、第1の多層反射層、第1の光共振層、第2の多層反射層、光吸収層及び反射膜が形成され、
前記半導体基板の上面に反射防止膜が形成され、
前記第1の光共振層は、前記第1,第2の多層反射層を構成する各半導体層よりも厚く、
前記第2の多層反射層と前記反射膜の間に有る膜の光学膜厚を第1の光学膜厚とし、前記第1の光共振層の光学膜厚を第2の光学膜厚とし、
nを整数、λを入射光の波長とすると、前記第1の光学膜厚は2nλ/4であり、前記第2の光学膜厚は(2n−1)λ/4であることを特徴とする半導体受光素子。 - 前記第1の光共振層のバンドギャップ波長が入射光の波長よりも長いことを特徴とする請求項1又は2に記載の半導体受光素子。
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JP2008180151A JP5239568B2 (ja) | 2008-07-10 | 2008-07-10 | 半導体受光素子 |
US12/327,861 US8035181B2 (en) | 2008-07-10 | 2008-12-04 | Semiconductor photodetector with improved quantum efficiency as a function of detected light wavelength |
CN2009101289696A CN101626043B (zh) | 2008-07-10 | 2009-03-20 | 半导体受光元件 |
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JP2008180151A JP5239568B2 (ja) | 2008-07-10 | 2008-07-10 | 半導体受光素子 |
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JP2010021337A JP2010021337A (ja) | 2010-01-28 |
JP5239568B2 true JP5239568B2 (ja) | 2013-07-17 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US8654232B2 (en) * | 2010-08-25 | 2014-02-18 | Sri International | Night vision CMOS imager with optical pixel cavity |
CN103579405B (zh) * | 2012-09-10 | 2015-09-30 | 清华大学 | 具有强吸收结构的高速snspd及其制备方法 |
US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10916669B2 (en) | 2012-12-10 | 2021-02-09 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10388806B2 (en) | 2012-12-10 | 2019-08-20 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
JP2015050446A (ja) * | 2013-09-05 | 2015-03-16 | ソニー株式会社 | 撮像素子および撮像装置 |
EP2889917A3 (en) * | 2013-12-28 | 2015-07-29 | Shu-Lu Chen | Photonic lock based high bandwidth photodetector |
US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
JP6693537B2 (ja) * | 2018-04-20 | 2020-05-13 | ソニー株式会社 | 撮像素子および撮像装置 |
JP7433898B2 (ja) | 2019-12-26 | 2024-02-20 | キヤノン株式会社 | 光電変換素子、光電変換システム |
WO2021246146A1 (ja) * | 2020-06-04 | 2021-12-09 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
CN112071938B (zh) * | 2020-08-07 | 2022-07-15 | 西安理工大学 | 具有中红外宽带光吸收特性的超导纳米线单光子探测器 |
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JP2874442B2 (ja) * | 1992-04-10 | 1999-03-24 | 日本電気株式会社 | 面入出力光電融合素子 |
JP2001308368A (ja) * | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 光共振器構造素子 |
JP3652252B2 (ja) * | 2001-01-17 | 2005-05-25 | キヤノン株式会社 | 半導体光装置 |
WO2006044982A1 (en) * | 2004-10-20 | 2006-04-27 | Massachusetts Institute Of Technology | Infrared detection material and method of production |
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JP2010021337A (ja) | 2010-01-28 |
US8035181B2 (en) | 2011-10-11 |
CN101626043A (zh) | 2010-01-13 |
CN101626043B (zh) | 2011-09-14 |
US20100006967A1 (en) | 2010-01-14 |
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