CN101847827A - 半导体激光装置 - Google Patents

半导体激光装置 Download PDF

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Publication number
CN101847827A
CN101847827A CN200910253156A CN200910253156A CN101847827A CN 101847827 A CN101847827 A CN 101847827A CN 200910253156 A CN200910253156 A CN 200910253156A CN 200910253156 A CN200910253156 A CN 200910253156A CN 101847827 A CN101847827 A CN 101847827A
Authority
CN
China
Prior art keywords
layer
refractive index
dielectric film
wavelength
medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910253156A
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English (en)
Chinese (zh)
Inventor
奥贯雄一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101847827A publication Critical patent/CN101847827A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN200910253156A 2009-03-25 2009-12-04 半导体激光装置 Pending CN101847827A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009074678A JP2010226056A (ja) 2009-03-25 2009-03-25 半導体レーザ装置
JP2009-074678 2009-03-25

Publications (1)

Publication Number Publication Date
CN101847827A true CN101847827A (zh) 2010-09-29

Family

ID=42772331

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910253156A Pending CN101847827A (zh) 2009-03-25 2009-12-04 半导体激光装置

Country Status (3)

Country Link
US (3) US8094696B2 (https=)
JP (1) JP2010226056A (https=)
CN (1) CN101847827A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496851A (zh) * 2011-11-24 2012-06-13 上海宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5597029B2 (ja) * 2010-05-27 2014-10-01 住友電気工業株式会社 波長可変半導体レーザ
DE102011054954A1 (de) * 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
JP2018006396A (ja) * 2016-06-28 2018-01-11 ウシオ電機株式会社 半導体レーザ素子および半導体レーザ装置
JP2022021054A (ja) * 2020-07-21 2022-02-02 ソニーグループ株式会社 半導体レーザ素子
US11909175B2 (en) * 2021-01-13 2024-02-20 Apple Inc. Horizontal cavity surface-emitting laser (HCSEL) monolithically integrated with a photodetector

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130187A (ja) 1983-12-17 1985-07-11 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS61207091A (ja) 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
JPH0824209B2 (ja) 1987-03-10 1996-03-06 古河電気工業株式会社 化合物半導体レ−ザ
JPH0621265Y2 (ja) 1987-04-13 1994-06-01 三洋電機株式会社 半導体レ−ザ装置
JPH0418784A (ja) 1990-02-13 1992-01-22 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
JPH0745910A (ja) 1993-07-30 1995-02-14 Ricoh Co Ltd 半導体レーザー
JP3739107B2 (ja) 1995-04-26 2006-01-25 シャープ株式会社 誘電体多層反射膜
JP2967757B2 (ja) 1997-04-11 1999-10-25 日本電気株式会社 半導体レーザ装置及びその製造方法
JP2008227169A (ja) * 2007-03-13 2008-09-25 Nec Electronics Corp 半導体レーザ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496851A (zh) * 2011-11-24 2012-06-13 上海宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法
CN102496851B (zh) * 2011-11-24 2015-11-25 上海华虹宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法

Also Published As

Publication number Publication date
US20120269219A1 (en) 2012-10-25
JP2010226056A (ja) 2010-10-07
US20120076168A1 (en) 2012-03-29
US8094696B2 (en) 2012-01-10
US20100246623A1 (en) 2010-09-30
US8233514B2 (en) 2012-07-31

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Application publication date: 20100929