JP2001119096A5 - - Google Patents
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- Publication number
- JP2001119096A5 JP2001119096A5 JP1999295260A JP29526099A JP2001119096A5 JP 2001119096 A5 JP2001119096 A5 JP 2001119096A5 JP 1999295260 A JP1999295260 A JP 1999295260A JP 29526099 A JP29526099 A JP 29526099A JP 2001119096 A5 JP2001119096 A5 JP 2001119096A5
- Authority
- JP
- Japan
- Prior art keywords
- range
- refractive index
- oxide
- materials containing
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29526099A JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
| US09/690,743 US6487227B1 (en) | 1999-10-18 | 2000-10-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29526099A JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001119096A JP2001119096A (ja) | 2001-04-27 |
| JP2001119096A5 true JP2001119096A5 (https=) | 2005-06-09 |
Family
ID=17818298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29526099A Pending JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6487227B1 (https=) |
| JP (1) | JP2001119096A (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133638A (ja) * | 2001-08-14 | 2003-05-09 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子及びレーザモジュール |
| JP2004087815A (ja) * | 2002-08-27 | 2004-03-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2004289108A (ja) * | 2002-09-27 | 2004-10-14 | Mitsubishi Electric Corp | 半導体光素子 |
| CN100407463C (zh) * | 2002-09-27 | 2008-07-30 | 三菱电机株式会社 | 半导体光电器件 |
| JP2010103569A (ja) * | 2002-09-27 | 2010-05-06 | Mitsubishi Electric Corp | 半導体光素子 |
| JP2004327581A (ja) | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2004327678A (ja) | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| KR20050020502A (ko) * | 2003-08-23 | 2005-03-04 | 엘지전자 주식회사 | 반도체 레이저 다이오드의 반사막 증착방법 |
| JP2005072488A (ja) * | 2003-08-27 | 2005-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2006186228A (ja) * | 2004-12-28 | 2006-07-13 | Toyoda Gosei Co Ltd | 半導体レーザダイオード |
| KR100663588B1 (ko) | 2005-01-04 | 2007-01-02 | 삼성전자주식회사 | 레이저 다이오드 |
| CN100449888C (zh) * | 2005-07-29 | 2009-01-07 | 日亚化学工业株式会社 | 半导体激光元件 |
| JP4923489B2 (ja) | 2005-09-05 | 2012-04-25 | 三菱電機株式会社 | 半導体レーザ装置 |
| DE102007059538B4 (de) * | 2007-12-11 | 2009-08-20 | Lumics Gmbh | Passivierung einer Resonator-Endfläche eines Halbleiter-Lasers mit einem Halbleiter-Übergitter |
| JP2010153826A (ja) * | 2008-11-25 | 2010-07-08 | Opnext Japan Inc | 波長可変フィルタ及び波長可変レーザモジュール |
| JP2010219436A (ja) * | 2009-03-18 | 2010-09-30 | Sony Corp | 多波長半導体レーザおよび光学記録再生装置 |
| US10615561B2 (en) * | 2017-04-28 | 2020-04-07 | Samsung Electronics Co., Ltd. | Multi-wavelength laser apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112679A (ja) | 1992-09-30 | 1994-04-22 | Asia Electron Inc | 電子機器の冷却装置 |
| US5812580A (en) * | 1996-11-05 | 1998-09-22 | Coherent, Inc. | Laser diode facet coating |
| US6330264B1 (en) * | 1999-01-18 | 2001-12-11 | Corning Lasertron, Inc. | Signal band antireflection coating for pump facet in fiber amplifier system |
-
1999
- 1999-10-18 JP JP29526099A patent/JP2001119096A/ja active Pending
-
2000
- 2000-10-18 US US09/690,743 patent/US6487227B1/en not_active Expired - Lifetime
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