JP2001119096A - 半導体レーザー装置 - Google Patents
半導体レーザー装置Info
- Publication number
- JP2001119096A JP2001119096A JP29526099A JP29526099A JP2001119096A JP 2001119096 A JP2001119096 A JP 2001119096A JP 29526099 A JP29526099 A JP 29526099A JP 29526099 A JP29526099 A JP 29526099A JP 2001119096 A JP2001119096 A JP 2001119096A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- semiconductor laser
- face
- film
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 230000010355 oscillation Effects 0.000 claims abstract description 23
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 15
- 238000002310 reflectometry Methods 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 108
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 9
- 239000002356 single layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29526099A JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
| US09/690,743 US6487227B1 (en) | 1999-10-18 | 2000-10-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29526099A JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001119096A true JP2001119096A (ja) | 2001-04-27 |
| JP2001119096A5 JP2001119096A5 (https=) | 2005-06-09 |
Family
ID=17818298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29526099A Pending JP2001119096A (ja) | 1999-10-18 | 1999-10-18 | 半導体レーザー装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6487227B1 (https=) |
| JP (1) | JP2001119096A (https=) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004289108A (ja) * | 2002-09-27 | 2004-10-14 | Mitsubishi Electric Corp | 半導体光素子 |
| JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| KR20050020502A (ko) * | 2003-08-23 | 2005-03-04 | 엘지전자 주식회사 | 반도체 레이저 다이오드의 반사막 증착방법 |
| JP2005072488A (ja) * | 2003-08-27 | 2005-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| US7039085B2 (en) | 2003-04-23 | 2006-05-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| KR100663588B1 (ko) | 2005-01-04 | 2007-01-02 | 삼성전자주식회사 | 레이저 다이오드 |
| CN100407463C (zh) * | 2002-09-27 | 2008-07-30 | 三菱电机株式会社 | 半导体光电器件 |
| US7616673B2 (en) | 2005-09-05 | 2009-11-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| JP2010103569A (ja) * | 2002-09-27 | 2010-05-06 | Mitsubishi Electric Corp | 半導体光素子 |
| JP2010219436A (ja) * | 2009-03-18 | 2010-09-30 | Sony Corp | 多波長半導体レーザおよび光学記録再生装置 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133638A (ja) * | 2001-08-14 | 2003-05-09 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子及びレーザモジュール |
| JP2004087815A (ja) * | 2002-08-27 | 2004-03-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2006186228A (ja) * | 2004-12-28 | 2006-07-13 | Toyoda Gosei Co Ltd | 半導体レーザダイオード |
| CN100449888C (zh) * | 2005-07-29 | 2009-01-07 | 日亚化学工业株式会社 | 半导体激光元件 |
| DE102007059538B4 (de) * | 2007-12-11 | 2009-08-20 | Lumics Gmbh | Passivierung einer Resonator-Endfläche eines Halbleiter-Lasers mit einem Halbleiter-Übergitter |
| JP2010153826A (ja) * | 2008-11-25 | 2010-07-08 | Opnext Japan Inc | 波長可変フィルタ及び波長可変レーザモジュール |
| US10615561B2 (en) * | 2017-04-28 | 2020-04-07 | Samsung Electronics Co., Ltd. | Multi-wavelength laser apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112679A (ja) | 1992-09-30 | 1994-04-22 | Asia Electron Inc | 電子機器の冷却装置 |
| US5812580A (en) * | 1996-11-05 | 1998-09-22 | Coherent, Inc. | Laser diode facet coating |
| US6330264B1 (en) * | 1999-01-18 | 2001-12-11 | Corning Lasertron, Inc. | Signal band antireflection coating for pump facet in fiber amplifier system |
-
1999
- 1999-10-18 JP JP29526099A patent/JP2001119096A/ja active Pending
-
2000
- 2000-10-18 US US09/690,743 patent/US6487227B1/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103569A (ja) * | 2002-09-27 | 2010-05-06 | Mitsubishi Electric Corp | 半導体光素子 |
| JP2004289108A (ja) * | 2002-09-27 | 2004-10-14 | Mitsubishi Electric Corp | 半導体光素子 |
| CN100407463C (zh) * | 2002-09-27 | 2008-07-30 | 三菱电机株式会社 | 半导体光电器件 |
| US7039085B2 (en) | 2003-04-23 | 2006-05-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| KR100653320B1 (ko) * | 2003-04-23 | 2006-12-04 | 미쓰비시덴키 가부시키가이샤 | 반도체 레이저장치 |
| JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| KR101098724B1 (ko) | 2003-04-24 | 2011-12-23 | 소니 주식회사 | 다파장 반도체 레이저 및 그 제조 방법 |
| KR20050020502A (ko) * | 2003-08-23 | 2005-03-04 | 엘지전자 주식회사 | 반도체 레이저 다이오드의 반사막 증착방법 |
| JP2005072488A (ja) * | 2003-08-27 | 2005-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| CN100355162C (zh) * | 2003-08-27 | 2007-12-12 | 三菱电机株式会社 | 半导体激光器 |
| KR100663588B1 (ko) | 2005-01-04 | 2007-01-02 | 삼성전자주식회사 | 레이저 다이오드 |
| US7616673B2 (en) | 2005-09-05 | 2009-11-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| JP2010219436A (ja) * | 2009-03-18 | 2010-09-30 | Sony Corp | 多波長半導体レーザおよび光学記録再生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6487227B1 (en) | 2002-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4097552B2 (ja) | 半導体レーザ装置 | |
| JP2001119096A (ja) | 半導体レーザー装置 | |
| US20080074748A1 (en) | Transmissive diffraction grating, and spectral separation element and spectroscope using the same | |
| TWI233718B (en) | Semiconductor laser device | |
| JPH1146036A (ja) | 面発光型半導体レーザおよびその製造方法 | |
| JP7183484B1 (ja) | 光半導体装置の製造方法及び光半導体装置用反射防止膜の設計方法 | |
| JP3080312B2 (ja) | 半導体レーザの製造方法 | |
| JP2003101126A (ja) | 半導体レーザ装置の製造方法及び半導体レーザ装置 | |
| US6907057B2 (en) | Semiconductor optical device and semiconductor laser module using the semiconductor optical device | |
| JP4294699B2 (ja) | 半導体レーザ装置 | |
| JPH0766500A (ja) | 光学薄膜形成方法 | |
| JP2004363534A (ja) | 半導体光素子装置およびそれが用いられた半導体レーザモジュール | |
| JPH0418784A (ja) | 半導体レーザ素子の保護膜 | |
| JP2002223029A (ja) | 半導体レーザ素子およびレーザモジュール | |
| JP2004085975A (ja) | 酸化物多層膜光学素子およびその製造方法 | |
| JPH04145677A (ja) | 可視レーザ用高反射鏡 | |
| JPH01184893A (ja) | 半導体レーザー | |
| JPH07244202A (ja) | ２波長反射防止膜 | |
| JPH02204702A (ja) | レーザ高反射鏡 | |
| JPH08114702A (ja) | 多層反射防止膜 | |
| JPH02241075A (ja) | 半導体レーザ装置 | |
| JPH06180401A (ja) | エッジフィルター | |
| JPH10213708A (ja) | 光吸収フィルタ | |
| JP2000111704A (ja) | 反射防止膜 | |
| JP2022053623A (ja) | 光学部材及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040902 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040902 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20061201 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070622 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070626 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071023 |