JP2007033042A - 試験装置 - Google Patents
試験装置 Download PDFInfo
- Publication number
- JP2007033042A JP2007033042A JP2005212333A JP2005212333A JP2007033042A JP 2007033042 A JP2007033042 A JP 2007033042A JP 2005212333 A JP2005212333 A JP 2005212333A JP 2005212333 A JP2005212333 A JP 2005212333A JP 2007033042 A JP2007033042 A JP 2007033042A
- Authority
- JP
- Japan
- Prior art keywords
- test
- overcurrent
- measured
- coil
- avalanche breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
【解決手段】 本発明は、パルス信号の供給端子における電圧が立ち下がった後、被測定素子2への電源電圧VDDの端子における立ち下がりによりアバランシェ破壊を検出する。
【選択図】 図1
Description
Claims (1)
- アバランシェ破壊の試験装置において、
コイルを介して被測定素子に電源電圧を印加する電源と、
前記被測定素子にパルス信号を印加するバルスジェネレータと、
前記コイルに並列に接続されて、前記コイルに蓄積されたエネルギーを放電させるディスチャージ回路と、
前記被測定素子への前記電源の供給を停止するスイッチと、
前記被測定対象の端子における前記パルス信号の立ち下がりの後、前記被測定対象の端子における前記電源電圧の立ち下がりにより、前記ディスチャージ回路、前記スイッチを動作させる破壊判定回路と
を備えることを特徴とする試験装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005212333A JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005212333A JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007033042A true JP2007033042A (ja) | 2007-02-08 |
JP2007033042A5 JP2007033042A5 (ja) | 2008-08-28 |
JP4558601B2 JP4558601B2 (ja) | 2010-10-06 |
Family
ID=37792513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005212333A Active JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4558601B2 (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009145302A (ja) * | 2007-12-18 | 2009-07-02 | Toyota Motor Corp | 半導体素子の試験装置及びその試験方法 |
JP2010181314A (ja) * | 2009-02-06 | 2010-08-19 | Fuji Electric Systems Co Ltd | 半導体試験装置 |
JP2011169681A (ja) * | 2010-02-17 | 2011-09-01 | Mitsubishi Electric Corp | 半導体装置の試験装置 |
DE102011108897A1 (de) | 2010-08-02 | 2012-02-02 | Advantest Corp. | Prüfvorrichtung und Prüfverfahren |
DE102011055529A1 (de) | 2010-12-15 | 2012-06-21 | Advantest Corporation | Testvorrichtung |
DE102011055530A1 (de) | 2010-12-15 | 2012-06-21 | Advantest Corp. | Testvorrichtung |
US20130027067A1 (en) * | 2011-07-28 | 2013-01-31 | Integrated Technology Corporation | Damage reduction method and apparatus for destructive testing of power semiconductors |
JP2013092534A (ja) * | 2013-01-17 | 2013-05-16 | Fuji Electric Co Ltd | 半導体試験装置 |
JP2013108802A (ja) * | 2011-11-18 | 2013-06-06 | Toyota Motor Corp | 半導体素子の試験装置及びその試験方法 |
JP2014048223A (ja) * | 2012-09-03 | 2014-03-17 | Toyota Motor Corp | 半導体素子試験装置 |
JP2015014488A (ja) * | 2013-07-04 | 2015-01-22 | 三菱電機株式会社 | 半導体試験装置 |
WO2015137023A1 (ja) * | 2014-03-11 | 2015-09-17 | 新東工業株式会社 | 被試験デバイスの検査システム、及びその操作方法 |
CN104950236A (zh) * | 2014-03-28 | 2015-09-30 | 丰田自动车株式会社 | 试验装置以及试验方法 |
JP2016031351A (ja) * | 2014-07-30 | 2016-03-07 | 株式会社デンソー | 半導体素子の検査回路および検査方法 |
WO2016189781A1 (en) | 2015-05-28 | 2016-12-01 | Sintokogio, Ltd. | Dynamic characteristics test device and dynamic characteristics test method |
JP2017003299A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社デンソー | 半導体素子の検査回路 |
CN109212401A (zh) * | 2018-09-03 | 2019-01-15 | 东南大学 | 基于热成像技术的半导体雪崩失效分析测试方法及装置 |
US10365317B2 (en) | 2015-06-25 | 2019-07-30 | Denso Corporation | Semiconductor element test apparatus and semiconductor element test method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62220877A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 電力用トランジスタの試験装置 |
JPH10112545A (ja) * | 1996-08-12 | 1998-04-28 | Shindengen Electric Mfg Co Ltd | 高アバランシェ耐量mosfet、及びその製造方法 |
-
2005
- 2005-07-22 JP JP2005212333A patent/JP4558601B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62220877A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 電力用トランジスタの試験装置 |
JPH10112545A (ja) * | 1996-08-12 | 1998-04-28 | Shindengen Electric Mfg Co Ltd | 高アバランシェ耐量mosfet、及びその製造方法 |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009145302A (ja) * | 2007-12-18 | 2009-07-02 | Toyota Motor Corp | 半導体素子の試験装置及びその試験方法 |
JP2010181314A (ja) * | 2009-02-06 | 2010-08-19 | Fuji Electric Systems Co Ltd | 半導体試験装置 |
JP2011169681A (ja) * | 2010-02-17 | 2011-09-01 | Mitsubishi Electric Corp | 半導体装置の試験装置 |
DE102011108897A1 (de) | 2010-08-02 | 2012-02-02 | Advantest Corp. | Prüfvorrichtung und Prüfverfahren |
JP2012032327A (ja) * | 2010-08-02 | 2012-02-16 | Advantest Corp | 試験装置及び試験方法 |
US8704540B2 (en) | 2010-12-15 | 2014-04-22 | Advantest Corporation | Test apparatus |
DE102011055529A1 (de) | 2010-12-15 | 2012-06-21 | Advantest Corporation | Testvorrichtung |
DE102011055530A1 (de) | 2010-12-15 | 2012-06-21 | Advantest Corp. | Testvorrichtung |
JP2012127808A (ja) * | 2010-12-15 | 2012-07-05 | Advantest Corp | 試験装置 |
US8773144B2 (en) | 2010-12-15 | 2014-07-08 | Advantest Corporation | Avalanche breakdown test apparatus |
US20130027067A1 (en) * | 2011-07-28 | 2013-01-31 | Integrated Technology Corporation | Damage reduction method and apparatus for destructive testing of power semiconductors |
WO2013016643A3 (en) * | 2011-07-28 | 2013-05-10 | Integrated Technology Corporation | Damage reduction method and apparatus for destructive testing of power semiconductors |
US9759763B2 (en) | 2011-07-28 | 2017-09-12 | Integrated Technology Corporation | Damage reduction method and apparatus for destructive testing of power semiconductors |
JP2013108802A (ja) * | 2011-11-18 | 2013-06-06 | Toyota Motor Corp | 半導体素子の試験装置及びその試験方法 |
JP2014048223A (ja) * | 2012-09-03 | 2014-03-17 | Toyota Motor Corp | 半導体素子試験装置 |
JP2013092534A (ja) * | 2013-01-17 | 2013-05-16 | Fuji Electric Co Ltd | 半導体試験装置 |
JP2015014488A (ja) * | 2013-07-04 | 2015-01-22 | 三菱電機株式会社 | 半導体試験装置 |
WO2015137023A1 (ja) * | 2014-03-11 | 2015-09-17 | 新東工業株式会社 | 被試験デバイスの検査システム、及びその操作方法 |
US10161990B2 (en) | 2014-03-11 | 2018-12-25 | Sintokogio, Ltd. | Inspection system for device to be tested, and method for operating inspection system for device to be tested |
JPWO2015137023A1 (ja) * | 2014-03-11 | 2017-04-06 | 新東工業株式会社 | 被試験デバイスの検査システム、及びその操作方法 |
CN104950236B (zh) * | 2014-03-28 | 2017-05-17 | 丰田自动车株式会社 | 试验装置以及试验方法 |
US9500695B2 (en) | 2014-03-28 | 2016-11-22 | Toyota Jidosha Kabushiki Kaisha | Examination device and examination method |
JP2015190923A (ja) * | 2014-03-28 | 2015-11-02 | トヨタ自動車株式会社 | 試験装置及び試験方法 |
CN104950236A (zh) * | 2014-03-28 | 2015-09-30 | 丰田自动车株式会社 | 试验装置以及试验方法 |
JP2016031351A (ja) * | 2014-07-30 | 2016-03-07 | 株式会社デンソー | 半導体素子の検査回路および検査方法 |
WO2016189781A1 (en) | 2015-05-28 | 2016-12-01 | Sintokogio, Ltd. | Dynamic characteristics test device and dynamic characteristics test method |
CN107209223A (zh) * | 2015-05-28 | 2017-09-26 | 新东工业株式会社 | 动态特性试验装置以及动态特性试验方法 |
JP2016223832A (ja) * | 2015-05-28 | 2016-12-28 | 新東工業株式会社 | 動特性試験装置及び動特性試験方法 |
JP2017003299A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社デンソー | 半導体素子の検査回路 |
US10365317B2 (en) | 2015-06-25 | 2019-07-30 | Denso Corporation | Semiconductor element test apparatus and semiconductor element test method |
CN109212401A (zh) * | 2018-09-03 | 2019-01-15 | 东南大学 | 基于热成像技术的半导体雪崩失效分析测试方法及装置 |
CN109212401B (zh) * | 2018-09-03 | 2020-08-25 | 东南大学 | 基于热成像技术的半导体雪崩失效分析测试方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4558601B2 (ja) | 2010-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4558601B2 (ja) | 試験装置 | |
US8044674B2 (en) | Semiconductor device with thermal fault detection | |
JP4853470B2 (ja) | 半導体素子の試験装置及びその試験方法 | |
RU2491690C2 (ru) | Автоматический выключатель с улучшенной функцией повторного замыкания | |
US9759763B2 (en) | Damage reduction method and apparatus for destructive testing of power semiconductors | |
TWI484710B (zh) | 電子保險絲裝置及其操作方法 | |
US20150372678A1 (en) | Adaptive blanking timer for short circuit detection | |
CN108462146B (zh) | 功率开关的热观测器以及过载保护 | |
US9857428B2 (en) | Monitoring device and monitoring method for a switching element | |
KR101291367B1 (ko) | 온도 검출 회로 | |
JP3139553B2 (ja) | Ic試験装置 | |
US8280670B2 (en) | Method and apparatus for detecting failure of an actuator switching device | |
JP6412092B2 (ja) | 突入電流防止回路、突入電流防止方法、及び突入電流防止用プログラム | |
US7199589B2 (en) | Method for controlling a switching converter and control device for a switching converter | |
US9097759B2 (en) | Apparatus related to an inductive switching test | |
BRPI1005078B1 (pt) | Dispositivo de proteção diferencial, aparelho comutador elétrico e método de proteçãodiferencial | |
JP6409697B2 (ja) | 半導体素子の検査回路および検査方法 | |
JP5258810B2 (ja) | 半導体装置の試験装置 | |
JP2013257177A (ja) | 半導体試験装置 | |
US20230146986A1 (en) | Short circuit detection and protection for an insulated gate component by monitoring and checking the gate voltage | |
JP5969941B2 (ja) | 半導体トランジスタのテスト方法 | |
JP7132197B2 (ja) | 保護回路、半導体装置及び方法 | |
JP2013195291A (ja) | 電圧変化検出回路および電圧変化検出方法 | |
JP5351389B2 (ja) | プローブカード | |
Baker et al. | Failure protection in power modules with auxiliary-emitter bond-wires |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080710 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080710 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100705 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100720 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100721 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4558601 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130730 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |