JP4558601B2 - 試験装置 - Google Patents
試験装置 Download PDFInfo
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- JP4558601B2 JP4558601B2 JP2005212333A JP2005212333A JP4558601B2 JP 4558601 B2 JP4558601 B2 JP 4558601B2 JP 2005212333 A JP2005212333 A JP 2005212333A JP 2005212333 A JP2005212333 A JP 2005212333A JP 4558601 B2 JP4558601 B2 JP 4558601B2
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- test
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- device under
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- avalanche breakdown
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- Testing Of Individual Semiconductor Devices (AREA)
Description
Claims (1)
- アバランシェ破壊の試験装置において、
コイルを介して被測定素子の第1及び第2の端子間に電源電圧を印加する電源と、
前記被測定素子の第3及び第2の端子間にパルス信号を印加するパルスジェネレータと、
前記コイルに並列に接続されて、前記コイルに蓄積されたエネルギーを放電させるディスチャージ回路と、
前記被測定素子への前記電源の供給を停止するスイッチと、
前記被測定対象の前記第3の端子における前記パルス信号の立ち下がりの後、前記被測定対象の前記第1及び第2の端子間電圧の立ち下がりにより、前記ディスチャージ回路、前記スイッチを動作させる破壊判定回路とを備える
ことを特徴とする試験装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005212333A JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005212333A JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007033042A JP2007033042A (ja) | 2007-02-08 |
JP2007033042A5 JP2007033042A5 (ja) | 2008-08-28 |
JP4558601B2 true JP4558601B2 (ja) | 2010-10-06 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2005212333A Active JP4558601B2 (ja) | 2005-07-22 | 2005-07-22 | 試験装置 |
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JP (1) | JP4558601B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4853470B2 (ja) * | 2007-12-18 | 2012-01-11 | トヨタ自動車株式会社 | 半導体素子の試験装置及びその試験方法 |
JP5257110B2 (ja) * | 2009-02-06 | 2013-08-07 | 富士電機株式会社 | 半導体試験装置 |
JP5258810B2 (ja) * | 2010-02-17 | 2013-08-07 | 三菱電機株式会社 | 半導体装置の試験装置 |
JP5547579B2 (ja) | 2010-08-02 | 2014-07-16 | 株式会社アドバンテスト | 試験装置及び試験方法 |
JP5461379B2 (ja) | 2010-12-15 | 2014-04-02 | 株式会社アドバンテスト | 試験装置 |
JP5528998B2 (ja) * | 2010-12-15 | 2014-06-25 | 株式会社アドバンテスト | 試験装置 |
US9759763B2 (en) * | 2011-07-28 | 2017-09-12 | Integrated Technology Corporation | Damage reduction method and apparatus for destructive testing of power semiconductors |
JP5742681B2 (ja) * | 2011-11-18 | 2015-07-01 | トヨタ自動車株式会社 | 半導体素子の試験装置及びその試験方法 |
JP2014048223A (ja) * | 2012-09-03 | 2014-03-17 | Toyota Motor Corp | 半導体素子試験装置 |
JP2013092534A (ja) * | 2013-01-17 | 2013-05-16 | Fuji Electric Co Ltd | 半導体試験装置 |
JP6207265B2 (ja) * | 2013-07-04 | 2017-10-04 | 三菱電機株式会社 | 半導体試験装置 |
WO2015137023A1 (ja) * | 2014-03-11 | 2015-09-17 | 新東工業株式会社 | 被試験デバイスの検査システム、及びその操作方法 |
JP5939272B2 (ja) * | 2014-03-28 | 2016-06-22 | トヨタ自動車株式会社 | 試験装置及び試験方法 |
JP6398433B2 (ja) * | 2014-07-30 | 2018-10-03 | 株式会社デンソー | 半導体素子の検査回路および検査方法 |
JP6398873B2 (ja) | 2015-05-28 | 2018-10-03 | 新東工業株式会社 | 動特性試験装置及び動特性試験方法 |
JP6365425B2 (ja) * | 2015-06-05 | 2018-08-01 | 株式会社デンソー | 半導体素子の検査回路 |
JP6332165B2 (ja) | 2015-06-25 | 2018-05-30 | 株式会社デンソー | 半導体素子の検査装置および検査方法 |
CN109212401B (zh) * | 2018-09-03 | 2020-08-25 | 东南大学 | 基于热成像技术的半导体雪崩失效分析测试方法及装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62220877A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 電力用トランジスタの試験装置 |
JPH10112545A (ja) * | 1996-08-12 | 1998-04-28 | Shindengen Electric Mfg Co Ltd | 高アバランシェ耐量mosfet、及びその製造方法 |
-
2005
- 2005-07-22 JP JP2005212333A patent/JP4558601B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62220877A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 電力用トランジスタの試験装置 |
JPH10112545A (ja) * | 1996-08-12 | 1998-04-28 | Shindengen Electric Mfg Co Ltd | 高アバランシェ耐量mosfet、及びその製造方法 |
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JP2007033042A (ja) | 2007-02-08 |
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