JP2007005594A5 - - Google Patents

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Publication number
JP2007005594A5
JP2007005594A5 JP2005184588A JP2005184588A JP2007005594A5 JP 2007005594 A5 JP2007005594 A5 JP 2007005594A5 JP 2005184588 A JP2005184588 A JP 2005184588A JP 2005184588 A JP2005184588 A JP 2005184588A JP 2007005594 A5 JP2007005594 A5 JP 2007005594A5
Authority
JP
Japan
Prior art keywords
laser
distributed bragg
bragg reflection
active layer
direct modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005184588A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007005594A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005184588A priority Critical patent/JP2007005594A/ja
Priority claimed from JP2005184588A external-priority patent/JP2007005594A/ja
Priority to US11/473,011 priority patent/US7760782B2/en
Publication of JP2007005594A publication Critical patent/JP2007005594A/ja
Publication of JP2007005594A5 publication Critical patent/JP2007005594A5/ja
Pending legal-status Critical Current

Links

JP2005184588A 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール Pending JP2007005594A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005184588A JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール
US11/473,011 US7760782B2 (en) 2005-06-24 2006-06-23 Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005184588A JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール

Publications (2)

Publication Number Publication Date
JP2007005594A JP2007005594A (ja) 2007-01-11
JP2007005594A5 true JP2007005594A5 (enExample) 2008-04-03

Family

ID=37567289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005184588A Pending JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール

Country Status (2)

Country Link
US (1) US7760782B2 (enExample)
JP (1) JP2007005594A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8014431B2 (en) * 2006-11-09 2011-09-06 Yiquan Li Vertical surface light emitting device with multiple active layers
US7394841B1 (en) 2007-01-18 2008-07-01 Epicrystals Oy Light emitting device for visual applications
JP2008277445A (ja) 2007-04-26 2008-11-13 Opnext Japan Inc 半導体レーザおよび光モジュール
US7679805B2 (en) * 2007-07-11 2010-03-16 Cubic Corporation Flip chip quantum well modulator
US8027591B2 (en) * 2007-10-29 2011-09-27 Cubic Corporation Resonant quantum well modulator driver
JP5250245B2 (ja) 2007-11-21 2013-07-31 日本オクラロ株式会社 半導体レーザ
JPWO2009116140A1 (ja) 2008-03-18 2011-07-21 富士通株式会社 光半導体素子及びその製造方法
JP5217767B2 (ja) * 2008-08-15 2013-06-19 富士通株式会社 半導体レーザ及び半導体レーザの製造方法
JP2010251649A (ja) * 2009-04-20 2010-11-04 Hitachi Ltd 面出射型レーザモジュールおよび面受光型モジュール
US8855160B2 (en) 2009-11-30 2014-10-07 Hitachi, Ltd. Horizontal-cavity surface-emitting laser
JP2011119311A (ja) * 2009-12-01 2011-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
JP5540360B2 (ja) * 2011-03-08 2014-07-02 日本電信電話株式会社 光パワーモニタ集積ｄｆｂレーザ
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
US8315287B1 (en) * 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
JP2014220463A (ja) * 2013-05-10 2014-11-20 住友電工デバイス・イノベーション株式会社 半導体装置
US9804348B2 (en) 2013-07-04 2017-10-31 Mellanox Technologies, Ltd. Silicon photonics connector
JP6220246B2 (ja) * 2013-11-26 2017-10-25 日本電信電話株式会社 直接変調レーザ
JP6247944B2 (ja) 2014-01-29 2017-12-13 日本オクラロ株式会社 水平共振器面出射型レーザ素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124983A (ja) * 1983-12-12 1985-07-04 Nec Corp 半導体レ−ザ
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
DE59204710D1 (de) * 1991-02-08 1996-02-01 Siemens Ag Optoelektronisches Bauelement zum Aus- und Einkoppeln von Strahlung
JP3245932B2 (ja) * 1992-02-06 2002-01-15 キヤノン株式会社 光半導体装置、その駆動方法及びそれを用いた光伝送方式
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
JP4026334B2 (ja) * 2001-07-30 2007-12-26 株式会社日立製作所 半導体レーザ、分布帰還型半導体レーザおよび波長可変半導体レーザ
US20030133482A1 (en) * 2001-12-03 2003-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for reducing stimulated brillouin scattering (SBS)
JP2003289169A (ja) 2002-03-28 2003-10-10 Hitachi Ltd 半導体レーザ装置
JP4634010B2 (ja) 2003-01-28 2011-02-16 株式会社日立製作所 半導体光素子

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