JP2007005594A - 半導体光素子及びそれを用いたモジュール - Google Patents

半導体光素子及びそれを用いたモジュール Download PDF

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Publication number
JP2007005594A
JP2007005594A JP2005184588A JP2005184588A JP2007005594A JP 2007005594 A JP2007005594 A JP 2007005594A JP 2005184588 A JP2005184588 A JP 2005184588A JP 2005184588 A JP2005184588 A JP 2005184588A JP 2007005594 A JP2007005594 A JP 2007005594A
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JP
Japan
Prior art keywords
laser
distributed bragg
bragg reflection
active layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2005184588A
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English (en)
Japanese (ja)
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JP2007005594A5 (enExample
Inventor
Masahiro Aoki
雅博 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Opnext Japan Inc
Original Assignee
Opnext Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opnext Japan Inc filed Critical Opnext Japan Inc
Priority to JP2005184588A priority Critical patent/JP2007005594A/ja
Priority to US11/473,011 priority patent/US7760782B2/en
Publication of JP2007005594A publication Critical patent/JP2007005594A/ja
Publication of JP2007005594A5 publication Critical patent/JP2007005594A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2005184588A 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール Pending JP2007005594A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005184588A JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール
US11/473,011 US7760782B2 (en) 2005-06-24 2006-06-23 Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005184588A JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール

Publications (2)

Publication Number Publication Date
JP2007005594A true JP2007005594A (ja) 2007-01-11
JP2007005594A5 JP2007005594A5 (enExample) 2008-04-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005184588A Pending JP2007005594A (ja) 2005-06-24 2005-06-24 半導体光素子及びそれを用いたモジュール

Country Status (2)

Country Link
US (1) US7760782B2 (enExample)
JP (1) JP2007005594A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1986294A2 (en) 2007-04-26 2008-10-29 OpNext Japan, Inc. Semiconductor laser and optical module
JP2009130030A (ja) * 2007-11-21 2009-06-11 Opnext Japan Inc 半導体レーザ
JP2010045256A (ja) * 2008-08-15 2010-02-25 Fujitsu Ltd 半導体レーザ及び半導体レーザの製造方法
JP2010517066A (ja) * 2007-01-18 2010-05-20 エピクリスタルズ オイ 周波数変換に基づくパルスレーザ光源
JP2011119311A (ja) * 2009-12-01 2011-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
JP2012186419A (ja) * 2011-03-08 2012-09-27 Nippon Telegr & Teleph Corp <Ntt> 光パワーモニタ集積ｄｆｂレーザ
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
US8319229B2 (en) 2008-03-18 2012-11-27 Fujitsu Limited Optical semiconductor device and method for manufacturing the same
US8855160B2 (en) 2009-11-30 2014-10-07 Hitachi, Ltd. Horizontal-cavity surface-emitting laser
JP2015103715A (ja) * 2013-11-26 2015-06-04 日本電信電話株式会社 直接変調レーザ
JP2015142055A (ja) * 2014-01-29 2015-08-03 日本オクラロ株式会社 水平共振器面出射型レーザ素子

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8014431B2 (en) * 2006-11-09 2011-09-06 Yiquan Li Vertical surface light emitting device with multiple active layers
US7679805B2 (en) * 2007-07-11 2010-03-16 Cubic Corporation Flip chip quantum well modulator
US8027591B2 (en) * 2007-10-29 2011-09-27 Cubic Corporation Resonant quantum well modulator driver
JP2010251649A (ja) * 2009-04-20 2010-11-04 Hitachi Ltd 面出射型レーザモジュールおよび面受光型モジュール
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
US8315287B1 (en) * 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
JP2014220463A (ja) * 2013-05-10 2014-11-20 住友電工デバイス・イノベーション株式会社 半導体装置
US9804348B2 (en) 2013-07-04 2017-10-31 Mellanox Technologies, Ltd. Silicon photonics connector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124983A (ja) * 1983-12-12 1985-07-04 Nec Corp 半導体レ−ザ
JPH0588029A (ja) * 1991-02-08 1993-04-09 Siemens Ag オプトエレクトロニクデバイス
JP2003046190A (ja) * 2001-07-30 2003-02-14 Hitachi Ltd 半導体レーザ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JP3245932B2 (ja) * 1992-02-06 2002-01-15 キヤノン株式会社 光半導体装置、その駆動方法及びそれを用いた光伝送方式
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
US20030133482A1 (en) * 2001-12-03 2003-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for reducing stimulated brillouin scattering (SBS)
JP2003289169A (ja) 2002-03-28 2003-10-10 Hitachi Ltd 半導体レーザ装置
JP4634010B2 (ja) 2003-01-28 2011-02-16 株式会社日立製作所 半導体光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124983A (ja) * 1983-12-12 1985-07-04 Nec Corp 半導体レ−ザ
JPH0588029A (ja) * 1991-02-08 1993-04-09 Siemens Ag オプトエレクトロニクデバイス
JP2003046190A (ja) * 2001-07-30 2003-02-14 Hitachi Ltd 半導体レーザ

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517066A (ja) * 2007-01-18 2010-05-20 エピクリスタルズ オイ 周波数変換に基づくパルスレーザ光源
JP2008277445A (ja) * 2007-04-26 2008-11-13 Opnext Japan Inc 半導体レーザおよび光モジュール
US7502403B2 (en) 2007-04-26 2009-03-10 Opnext Japan, Inc. Semiconductor laser and optical module
EP1986294A2 (en) 2007-04-26 2008-10-29 OpNext Japan, Inc. Semiconductor laser and optical module
JP2009130030A (ja) * 2007-11-21 2009-06-11 Opnext Japan Inc 半導体レーザ
US7636378B2 (en) 2007-11-21 2009-12-22 Opnext Japan, Inc. Semiconductor laser diode
US8319229B2 (en) 2008-03-18 2012-11-27 Fujitsu Limited Optical semiconductor device and method for manufacturing the same
JP2010045256A (ja) * 2008-08-15 2010-02-25 Fujitsu Ltd 半導体レーザ及び半導体レーザの製造方法
US8855160B2 (en) 2009-11-30 2014-10-07 Hitachi, Ltd. Horizontal-cavity surface-emitting laser
JP2011119311A (ja) * 2009-12-01 2011-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
JP2012186419A (ja) * 2011-03-08 2012-09-27 Nippon Telegr & Teleph Corp <Ntt> 光パワーモニタ集積ｄｆｂレーザ
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
US8902947B2 (en) 2011-03-29 2014-12-02 Hitachi, Ltd. Optical module
JP2015103715A (ja) * 2013-11-26 2015-06-04 日本電信電話株式会社 直接変調レーザ
JP2015142055A (ja) * 2014-01-29 2015-08-03 日本オクラロ株式会社 水平共振器面出射型レーザ素子
US9601903B2 (en) 2014-01-29 2017-03-21 Oclaro Japan, Inc. Horizontal cavity surface emitting laser device

Also Published As

Publication number Publication date
US7760782B2 (en) 2010-07-20
US20060291516A1 (en) 2006-12-28

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