JP2006528430A - 有機半導体の積層 - Google Patents
有機半導体の積層 Download PDFInfo
- Publication number
- JP2006528430A JP2006528430A JP2006521198A JP2006521198A JP2006528430A JP 2006528430 A JP2006528430 A JP 2006528430A JP 2006521198 A JP2006521198 A JP 2006521198A JP 2006521198 A JP2006521198 A JP 2006521198A JP 2006528430 A JP2006528430 A JP 2006528430A
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- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- donor
- transistor
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 17
- 229920005570 flexible polymer Polymers 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract description 7
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000004816 latex Substances 0.000 description 3
- 229920000126 latex Polymers 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002964 pentacenes Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 206010048334 Mobility decreased Diseases 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 and therefore Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009820 dry lamination Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
- Y10T156/1702—For plural parts or plural areas of single part
- Y10T156/1705—Lamina transferred to base from adhered flexible web or sheet type carrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
a)有機半導体をドナー基板上に堆積させ、
b)ドナー基板上の有機半導体をレシーバ基板と積層し、
c)ドナー基板を除去すること、
を含んでなる方法に関する。
実施例
Claims (5)
- a)ドナー基板上に有機半導体を堆積させ、
b)前記ドナー基板上の前記有機半導体をレシーバ基板と積層し、
c)前記ドナー基板を除去すること、
を含んでなる方法。 - 前記レシーバ基板は可撓性ポリマーである、請求項1に記載の方法。
- レシーバ基板上に積層された有機半導体を含んでなる、電子デバイス。
- 前記デバイスはトランジスタである、請求項3に記載の電子デバイス。
- 前記レシーバ基板は可撓性ポリマーである、請求項3または4に記載の電子デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48933003P | 2003-07-22 | 2003-07-22 | |
US50168703P | 2003-09-10 | 2003-09-10 | |
PCT/US2004/023375 WO2005011016A2 (en) | 2003-07-22 | 2004-07-22 | Lamination of organic semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006528430A true JP2006528430A (ja) | 2006-12-14 |
JP2006528430A5 JP2006528430A5 (ja) | 2007-08-02 |
Family
ID=34107798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006521198A Pending JP2006528430A (ja) | 2003-07-22 | 2004-07-22 | 有機半導体の積層 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7105462B2 (ja) |
EP (1) | EP1647063A2 (ja) |
JP (1) | JP2006528430A (ja) |
KR (1) | KR20060063903A (ja) |
WO (1) | WO2005011016A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067390A (ja) * | 2005-08-05 | 2007-03-15 | Sony Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP2007067320A (ja) * | 2005-09-02 | 2007-03-15 | Dainippon Printing Co Ltd | 有機トランジスタ及びその作製方法並びに有機トランジスタシート |
JP2008103680A (ja) * | 2006-09-22 | 2008-05-01 | Konica Minolta Holdings Inc | ドナーシートの製造方法、ドナーシート、及び有機薄膜トランジスタの製造方法 |
JP2008263045A (ja) * | 2007-04-12 | 2008-10-30 | Sony Corp | パターン形成方法および電子素子の製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0515175D0 (en) * | 2005-07-25 | 2005-08-31 | Plastic Logic Ltd | Flexible resistive touch screen |
JP4892894B2 (ja) * | 2005-08-31 | 2012-03-07 | 株式会社島津製作所 | 光または放射線検出ユニットの製造方法、およびその製造方法で製造された光または放射線検出ユニット |
JP4831406B2 (ja) | 2006-01-10 | 2011-12-07 | ソニー株式会社 | 半導体装置の製造方法 |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
GB0611032D0 (en) * | 2006-06-05 | 2006-07-12 | Plastic Logic Ltd | Multi-touch active display keyboard |
US7571920B2 (en) * | 2006-09-21 | 2009-08-11 | Felt Racing, Llc | Bicycle front fork assembly |
US7976045B2 (en) * | 2006-09-21 | 2011-07-12 | Felt Racing, Llc | Bicycle front fork assembly |
GB2453766A (en) * | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
AU2012216352B2 (en) | 2012-08-22 | 2015-02-12 | Woodside Energy Technologies Pty Ltd | Modular LNG production facility |
US9583426B2 (en) | 2014-11-05 | 2017-02-28 | Invensas Corporation | Multi-layer substrates suitable for interconnection between circuit modules |
US10283492B2 (en) | 2015-06-23 | 2019-05-07 | Invensas Corporation | Laminated interposers and packages with embedded trace interconnects |
US9852994B2 (en) | 2015-12-14 | 2017-12-26 | Invensas Corporation | Embedded vialess bridges |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070271A2 (en) * | 2001-03-01 | 2002-09-12 | E. I. Du Pont De Nemours And Company | Thermal imaging processes and products of electroactive organic material |
JP2002260854A (ja) * | 2001-03-02 | 2002-09-13 | Fuji Photo Film Co Ltd | 転写材料及び有機薄膜素子の製造方法 |
JP2003187972A (ja) * | 2001-12-20 | 2003-07-04 | Dainippon Printing Co Ltd | 有機el素子の製造方法および有機el転写体と被転写体 |
JP2003298067A (ja) * | 2001-12-25 | 2003-10-17 | Sharp Corp | トランジスタおよびそれを用いた表示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
US6335263B1 (en) * | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
US6767807B2 (en) | 2001-03-02 | 2004-07-27 | Fuji Photo Film Co., Ltd. | Method for producing organic thin film device and transfer material used therein |
US6485884B2 (en) | 2001-04-27 | 2002-11-26 | 3M Innovative Properties Company | Method for patterning oriented materials for organic electronic displays and devices |
JP3812935B2 (ja) | 2001-10-22 | 2006-08-23 | シャープ株式会社 | 液晶表示装置 |
US6852996B2 (en) * | 2002-09-25 | 2005-02-08 | Stmicroelectronics, Inc. | Organic semiconductor sensor device |
US6918982B2 (en) * | 2002-12-09 | 2005-07-19 | International Business Machines Corporation | System and method of transfer printing an organic semiconductor |
US7141893B2 (en) * | 2005-03-30 | 2006-11-28 | Motorola, Inc. | Highly available power distribution system |
-
2004
- 2004-07-21 US US10/895,599 patent/US7105462B2/en not_active Expired - Fee Related
- 2004-07-22 KR KR1020067001364A patent/KR20060063903A/ko not_active Application Discontinuation
- 2004-07-22 EP EP04757163A patent/EP1647063A2/en not_active Withdrawn
- 2004-07-22 JP JP2006521198A patent/JP2006528430A/ja active Pending
- 2004-07-22 WO PCT/US2004/023375 patent/WO2005011016A2/en not_active Application Discontinuation
-
2006
- 2006-07-26 US US11/493,050 patent/US20070004229A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070271A2 (en) * | 2001-03-01 | 2002-09-12 | E. I. Du Pont De Nemours And Company | Thermal imaging processes and products of electroactive organic material |
JP2002260854A (ja) * | 2001-03-02 | 2002-09-13 | Fuji Photo Film Co Ltd | 転写材料及び有機薄膜素子の製造方法 |
JP2003187972A (ja) * | 2001-12-20 | 2003-07-04 | Dainippon Printing Co Ltd | 有機el素子の製造方法および有機el転写体と被転写体 |
JP2003298067A (ja) * | 2001-12-25 | 2003-10-17 | Sharp Corp | トランジスタおよびそれを用いた表示装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067390A (ja) * | 2005-08-05 | 2007-03-15 | Sony Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP2007067320A (ja) * | 2005-09-02 | 2007-03-15 | Dainippon Printing Co Ltd | 有機トランジスタ及びその作製方法並びに有機トランジスタシート |
JP2008103680A (ja) * | 2006-09-22 | 2008-05-01 | Konica Minolta Holdings Inc | ドナーシートの製造方法、ドナーシート、及び有機薄膜トランジスタの製造方法 |
JP2008263045A (ja) * | 2007-04-12 | 2008-10-30 | Sony Corp | パターン形成方法および電子素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050035374A1 (en) | 2005-02-17 |
WO2005011016A2 (en) | 2005-02-03 |
US7105462B2 (en) | 2006-09-12 |
EP1647063A2 (en) | 2006-04-19 |
WO2005011016A3 (en) | 2005-03-03 |
US20070004229A1 (en) | 2007-01-04 |
KR20060063903A (ko) | 2006-06-12 |
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