JP2006525878A - 基板研磨装置 - Google Patents

基板研磨装置 Download PDF

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Publication number
JP2006525878A
JP2006525878A JP2006519155A JP2006519155A JP2006525878A JP 2006525878 A JP2006525878 A JP 2006525878A JP 2006519155 A JP2006519155 A JP 2006519155A JP 2006519155 A JP2006519155 A JP 2006519155A JP 2006525878 A JP2006525878 A JP 2006525878A
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JP
Japan
Prior art keywords
substrate
polishing
measurement
light
fluid
Prior art date
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Pending
Application number
JP2006519155A
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English (en)
Japanese (ja)
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JP2006525878A5 (enExample
Inventor
一人 廣川
俊輔 中井
真朗 大田
雄高 和田
洋一 小林
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Ebara Corp
Original Assignee
Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of JP2006525878A publication Critical patent/JP2006525878A/ja
Publication of JP2006525878A5 publication Critical patent/JP2006525878A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2006519155A 2003-05-16 2004-05-13 基板研磨装置 Pending JP2006525878A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003138479 2003-05-16
JP2003138782 2003-05-16
JP2003138496 2003-05-16
PCT/JP2004/006768 WO2004101223A1 (en) 2003-05-16 2004-05-13 Substrate polishing apparatus

Publications (2)

Publication Number Publication Date
JP2006525878A true JP2006525878A (ja) 2006-11-16
JP2006525878A5 JP2006525878A5 (enExample) 2007-06-28

Family

ID=33458361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006519155A Pending JP2006525878A (ja) 2003-05-16 2004-05-13 基板研磨装置

Country Status (7)

Country Link
US (3) US20040242121A1 (enExample)
EP (1) EP1641597A4 (enExample)
JP (1) JP2006525878A (enExample)
KR (1) KR20060009327A (enExample)
CN (1) CN1791490B (enExample)
TW (1) TWI338605B (enExample)
WO (1) WO2004101223A1 (enExample)

Cited By (6)

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WO2020137653A1 (ja) * 2018-12-26 2020-07-02 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
JP2021003761A (ja) * 2019-06-26 2021-01-14 株式会社荏原製作所 光学式表面監視装置の洗浄方法
JP2021030408A (ja) * 2019-08-29 2021-03-01 株式会社荏原製作所 研磨装置および研磨方法
JP2022002870A (ja) * 2017-07-24 2022-01-11 株式会社荏原製作所 研磨方法
KR20220100110A (ko) * 2016-09-15 2022-07-14 어플라이드 머티어리얼스, 인코포레이티드 화학 기계적 폴리싱 스마트 링
KR20250019583A (ko) 2023-08-01 2025-02-10 가부시키가이샤 에바라 세이사꾸쇼 연마 장치

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KR20220100110A (ko) * 2016-09-15 2022-07-14 어플라이드 머티어리얼스, 인코포레이티드 화학 기계적 폴리싱 스마트 링
JP2022002870A (ja) * 2017-07-24 2022-01-11 株式会社荏原製作所 研磨方法
JP7316785B2 (ja) 2018-12-26 2023-07-28 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
WO2020137653A1 (ja) * 2018-12-26 2020-07-02 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
KR20210106479A (ko) * 2018-12-26 2021-08-30 가부시키가이샤 에바라 세이사꾸쇼 광학식 막 두께 측정 시스템의 세정 방법
KR102815099B1 (ko) * 2018-12-26 2025-06-04 가부시키가이샤 에바라 세이사꾸쇼 광학식 막 두께 측정 시스템의 세정 방법
TWI843783B (zh) * 2018-12-26 2024-06-01 日商荏原製作所股份有限公司 光學式膜厚量測系統之清洗方法
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JP2021003761A (ja) * 2019-06-26 2021-01-14 株式会社荏原製作所 光学式表面監視装置の洗浄方法
JP7596438B2 (ja) 2019-06-26 2024-12-09 株式会社荏原製作所 光学式表面監視装置の洗浄方法
JP7638617B2 (ja) 2019-06-26 2025-03-04 株式会社荏原製作所 光学式表面監視装置の洗浄方法
WO2021039401A1 (ja) * 2019-08-29 2021-03-04 株式会社荏原製作所 研磨装置および研磨方法
JP7403998B2 (ja) 2019-08-29 2023-12-25 株式会社荏原製作所 研磨装置および研磨方法
KR20220049596A (ko) * 2019-08-29 2022-04-21 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법
JP2021030408A (ja) * 2019-08-29 2021-03-01 株式会社荏原製作所 研磨装置および研磨方法
KR102846970B1 (ko) 2019-08-29 2025-08-18 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법
KR20250019583A (ko) 2023-08-01 2025-02-10 가부시키가이샤 에바라 세이사꾸쇼 연마 장치

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US20060105679A1 (en) 2006-05-18
KR20060009327A (ko) 2006-01-31
CN1791490A (zh) 2006-06-21
US20040242121A1 (en) 2004-12-02
TWI338605B (en) 2011-03-11
WO2004101223A1 (en) 2004-11-25
EP1641597A4 (en) 2007-10-31
US20070173177A1 (en) 2007-07-26
CN1791490B (zh) 2010-12-08
TW200507984A (en) 2005-03-01
US7214122B2 (en) 2007-05-08
US7507144B2 (en) 2009-03-24

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