JP2006522226A5 - - Google Patents

Download PDF

Info

Publication number
JP2006522226A5
JP2006522226A5 JP2006509300A JP2006509300A JP2006522226A5 JP 2006522226 A5 JP2006522226 A5 JP 2006522226A5 JP 2006509300 A JP2006509300 A JP 2006509300A JP 2006509300 A JP2006509300 A JP 2006509300A JP 2006522226 A5 JP2006522226 A5 JP 2006522226A5
Authority
JP
Japan
Prior art keywords
reactive compound
transport
location
reactive
reducing degradation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006509300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006522226A (ja
Filing date
Publication date
Priority claimed from US10/396,795 external-priority patent/US20040188272A1/en
Application filed filed Critical
Publication of JP2006522226A publication Critical patent/JP2006522226A/ja
Publication of JP2006522226A5 publication Critical patent/JP2006522226A5/ja
Pending legal-status Critical Current

Links

JP2006509300A 2003-03-25 2004-03-25 輸送中の反応性化合物の劣化を低減する方法 Pending JP2006522226A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/396,795 US20040188272A1 (en) 2003-03-25 2003-03-25 Method for reducing degradation of reactive compounds during transport
PCT/US2004/009186 WO2004088004A1 (en) 2003-03-25 2004-03-25 Method for reducing degradation of reactive compounds during transport

Publications (2)

Publication Number Publication Date
JP2006522226A JP2006522226A (ja) 2006-09-28
JP2006522226A5 true JP2006522226A5 (enExample) 2007-06-14

Family

ID=32988852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006509300A Pending JP2006522226A (ja) 2003-03-25 2004-03-25 輸送中の反応性化合物の劣化を低減する方法

Country Status (10)

Country Link
US (1) US20040188272A1 (enExample)
EP (1) EP1606437A1 (enExample)
JP (1) JP2006522226A (enExample)
KR (1) KR20050114680A (enExample)
CN (1) CN1761774A (enExample)
CA (1) CA2514527A1 (enExample)
RU (1) RU2005132824A (enExample)
TW (1) TW200500166A (enExample)
WO (1) WO2004088004A1 (enExample)
ZA (1) ZA200505303B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110002017A (ko) * 2008-03-31 2011-01-06 제온 코포레이션 플라즈마 에칭 방법
US8590705B2 (en) * 2010-06-11 2013-11-26 Air Products And Chemicals, Inc. Cylinder surface treated container for monochlorosilane
CN104388938A (zh) * 2014-11-05 2015-03-04 辽宁石油化工大学 一种铝合金焊丝的电化学抛光液及电化学抛光方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2138539B1 (enExample) * 1971-05-27 1973-05-25 Alsthom
US3998180A (en) * 1975-04-07 1976-12-21 Union Carbide Corporation Vapor deposition apparatus including fluid transfer means
DE3614290A1 (de) * 1986-04-26 1987-10-29 Messer Griesheim Gmbh Druckgasbehaelter aus einer austenitischen stahllegierung
DE3617092A1 (de) * 1986-05-21 1987-11-26 Poligrat Gmbh Innenoberflaeche einer gasflasche und verfahren zu deren herstellung
JPH01261208A (ja) * 1988-04-11 1989-10-18 Mitsui Toatsu Chem Inc 三弗化窒素ガスの精製方法
US5009963A (en) * 1988-07-20 1991-04-23 Tadahiro Ohmi Metal material with film passivated by fluorination and apparatus composed of the metal material
EP1069610A2 (en) * 1990-01-08 2001-01-17 Lsi Logic Corporation Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus
US5085745A (en) * 1990-11-07 1992-02-04 Liquid Carbonic Corporation Method for treating carbon steel cylinder
JPH0666400A (ja) * 1992-08-21 1994-03-08 Mitsui Toatsu Chem Inc フルオロシランガスの充填容器
US6557593B2 (en) * 1993-04-28 2003-05-06 Advanced Technology Materials, Inc. Refillable ampule and method re same
JPH07197158A (ja) * 1993-12-28 1995-08-01 Mitsubishi Materials Corp Ni基合金とそれを用いた半導体製造装置用部材及び液晶製造装置用部材
JP2893081B2 (ja) * 1994-09-20 1999-05-17 岩谷産業株式会社 オゾンガス貯蔵容器
JP3010138U (ja) * 1994-10-13 1995-04-25 有限会社字多精密工業 ステンレス製ボンベ
GB9724168D0 (en) * 1997-11-14 1998-01-14 Air Prod & Chem Gas control device and method of supplying gas
US6514346B1 (en) * 1998-03-25 2003-02-04 Neuco, Inc. Method and apparatus for inserting and propelling a coating device into and through live gas pipeline
US6343476B1 (en) * 1998-04-28 2002-02-05 Advanced Technology Materials, Inc. Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein
JP2000070705A (ja) * 1998-08-28 2000-03-07 Iwatani Internatl Corp フッ素含有ガスの供給ラインでの腐食生成物低減方法
US6374860B2 (en) * 1998-10-16 2002-04-23 Daniel Industries, Inc. Integrated valve design for gas chromatograph
US6523615B2 (en) * 2000-03-31 2003-02-25 John Gandy Corporation Electropolishing method for oil field tubular goods and drill pipe

Similar Documents

Publication Publication Date Title
EP1399382B1 (en) Production of high-purity fluorine gas and method for analyzing trace impurities in high-purity fluorine gas
JP3878972B2 (ja) 反応器の内部をクリーニングするため、ならびにケイ素含有化合物の膜をエッチングするためのガス組成物
US20030163008A1 (en) Process for producing perfluorocarbons and use thereof
JP3045576B2 (ja) ステンレス鋼の不動態膜形成方法及びステンレス鋼
TW201715603A (zh) 乾蝕刻方法、半導體元件之製造方法以及腔室清潔方法
JPS5915081B2 (ja) ニトロジントリフルオライド含有ガスを精製する方法
JP2006522226A5 (enExample)
JP2018107438A (ja) 金属部材の表面処理方法及び半導体素子の製造方法
JP4744017B2 (ja) 高純度フッ素ガス中の微量不純物の分析方法
JP2867376B2 (ja) フッ化不動態膜が形成された金属材料、その金属材料を用いたガス装置、並びに該フッ化不動態膜の形成方法
JP3030351B2 (ja) フッ化不働態膜が形成されたステンレス鋼、その製造方法並びにそのステンレスを用いた装置
RU2005132824A (ru) Способ снижения деградации активных соединений при транспортировке
JP3955294B2 (ja) 半導体加工装置用部材の耐食処理方法およびその処理部材
JPH02175855A (ja) フッ化不働態膜が形成された金属材料並びにその金属材料を用いた装置
JP4320389B2 (ja) Cvdチャンバーのクリーニング方法およびそれに用いるクリーニングガス
JP3084306B2 (ja) フッ化不動態膜の形成方法
JP3049553B1 (ja) 腐食性ガス移送系での不動態化処理方法
JP2004360066A (ja) 耐食性材料およびその製造方法
RU2003108772A (ru) Способ получения порошков тугоплавких металлов
Wyse et al. Cylinder, purifier technologies for controlling: contamination in CO.(Gases/Gas Handling)
WO2021241143A1 (ja) ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
TWI798872B (zh) 已填充氣體之填充容器及(e)-1,1,1,4,4,4-六氟-2-丁烯之保管方法
WO2023282152A1 (ja) モリブデンの一フッ化物から五フッ化物の除去方法及び半導体デバイスの製造方法
JP2000070705A (ja) フッ素含有ガスの供給ラインでの腐食生成物低減方法
KR950012809B1 (ko) 불화부동태막이 형성된 금속재료 및 그 금속재료를 사용한 장치