JP2006515956A5 - - Google Patents

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Publication number
JP2006515956A5
JP2006515956A5 JP2005501099A JP2005501099A JP2006515956A5 JP 2006515956 A5 JP2006515956 A5 JP 2006515956A5 JP 2005501099 A JP2005501099 A JP 2005501099A JP 2005501099 A JP2005501099 A JP 2005501099A JP 2006515956 A5 JP2006515956 A5 JP 2006515956A5
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JP
Japan
Prior art keywords
runners
source
semiconductor device
elements
power mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005501099A
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English (en)
Japanese (ja)
Other versions
JP4641259B2 (ja
JP2006515956A (ja
Filing date
Publication date
Priority claimed from US10/601,121 external-priority patent/US6972464B2/en
Application filed filed Critical
Publication of JP2006515956A publication Critical patent/JP2006515956A/ja
Publication of JP2006515956A5 publication Critical patent/JP2006515956A5/ja
Application granted granted Critical
Publication of JP4641259B2 publication Critical patent/JP4641259B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005501099A 2002-10-08 2003-10-06 パワーｍｏｓｆｅｔ Expired - Lifetime JP4641259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41694202P 2002-10-08 2002-10-08
US10/601,121 US6972464B2 (en) 2002-10-08 2003-06-19 Power MOSFET
PCT/US2003/031603 WO2004034432A2 (en) 2002-10-08 2003-10-06 Power mosfet

Publications (3)

Publication Number Publication Date
JP2006515956A JP2006515956A (ja) 2006-06-08
JP2006515956A5 true JP2006515956A5 (enExample) 2006-12-14
JP4641259B2 JP4641259B2 (ja) 2011-03-02

Family

ID=32096175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005501099A Expired - Lifetime JP4641259B2 (ja) 2002-10-08 2003-10-06 パワーｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US6972464B2 (enExample)
JP (1) JP4641259B2 (enExample)
KR (1) KR101022867B1 (enExample)
AU (1) AU2003284004A1 (enExample)
WO (1) WO2004034432A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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WO2005057626A2 (en) * 2003-12-04 2005-06-23 Great Wall Semiconductor Corporation System and method to reduce metal series resistance of bumped chip
WO2005059957A2 (en) * 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Metal interconnect system and method for direct die attachment
US7612418B2 (en) 2003-12-12 2009-11-03 Great Wall Semiconductor Corporation Monolithic power semiconductor structures including pairs of integrated devices
US7560808B2 (en) * 2005-10-19 2009-07-14 Texas Instruments Incorporated Chip scale power LDMOS device
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
JP4814770B2 (ja) * 2006-12-01 2011-11-16 パナソニック株式会社 半導体集積回路
JP2008218442A (ja) * 2007-02-28 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその製造方法
WO2008155086A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Halbleiterbauelement mit ringförmig geschlossener kontaktierung
JP5326151B2 (ja) * 2007-12-26 2013-10-30 セイコーＮｐｃ株式会社 パワーｍｏｓトランジスタ
US8138787B2 (en) * 2008-07-13 2012-03-20 Altera Corporation Apparatus and method for input/output module that optimizes frequency performance in a circuit
US8648449B2 (en) * 2009-01-29 2014-02-11 International Rectifier Corporation Electrical connectivity for circuit applications
US9070670B2 (en) 2009-01-29 2015-06-30 International Rectifier Corporation Electrical connectivity of die to a host substrate
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9029866B2 (en) 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US8399912B2 (en) * 2010-02-16 2013-03-19 International Rectifier Corporation III-nitride power device with solderable front metal
US8692360B1 (en) * 2010-07-06 2014-04-08 International Rectifier Corporation Electrical connectivity for circuit applications
US8581343B1 (en) * 2010-07-06 2013-11-12 International Rectifier Corporation Electrical connectivity for circuit applications
US9006099B2 (en) * 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
JP6208740B2 (ja) * 2012-03-26 2017-10-04 ラヴァル エイ．シー．エス．リミテッドＲＡＶＡＬ Ａ．Ｃ．Ｓ．Ｌｔｄ． 燃料蒸気弁システムおよびその構成要素
AU2013305471C1 (en) * 2012-08-22 2018-08-23 Newsouth Innovations Pty Ltd A method of forming a contact for a photovoltaic cell
US9972624B2 (en) 2013-08-23 2018-05-15 Qualcomm Incorporated Layout construction for addressing electromigration
US9786663B2 (en) 2013-08-23 2017-10-10 Qualcomm Incorporated Layout construction for addressing electromigration
JP6295065B2 (ja) 2013-11-20 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置
US9324819B1 (en) 2014-11-26 2016-04-26 Delta Electronics, Inc. Semiconductor device
CN107851583B (zh) * 2015-08-21 2021-04-02 日立汽车系统株式会社 半导体装置、半导体集成电路以及负载驱动装置
TWI748233B (zh) * 2018-08-29 2021-12-01 美商高效電源轉換公司 具有降低導通電阻之橫向功率元件
US11749670B2 (en) * 2020-05-18 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Power switch for backside power distribution
WO2022244700A1 (ja) * 2021-05-17 2022-11-24 株式会社村田製作所 半導体装置
WO2023272674A1 (en) 2021-07-01 2023-01-05 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based multi-channel switching semiconductor device and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
JP3405508B2 (ja) * 1997-05-30 2003-05-12 富士通株式会社 半導体集積回路
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6683380B2 (en) * 2000-07-07 2004-01-27 Texas Instruments Incorporated Integrated circuit with bonding layer over active circuitry
US20020071293A1 (en) * 2000-07-13 2002-06-13 Eden Richard C. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor
ATE387012T1 (de) * 2000-07-27 2008-03-15 Texas Instruments Inc Kontaktierungsstruktur einer integrierten leistungsschaltung

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