JP2009076540A5 - - Google Patents

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Publication number
JP2009076540A5
JP2009076540A5 JP2007242011A JP2007242011A JP2009076540A5 JP 2009076540 A5 JP2009076540 A5 JP 2009076540A5 JP 2007242011 A JP2007242011 A JP 2007242011A JP 2007242011 A JP2007242011 A JP 2007242011A JP 2009076540 A5 JP2009076540 A5 JP 2009076540A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
diode region
diode
base contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007242011A
Other languages
English (en)
Japanese (ja)
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JP2009076540A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007242011A priority Critical patent/JP2009076540A/ja
Priority claimed from JP2007242011A external-priority patent/JP2009076540A/ja
Priority to US12/232,074 priority patent/US7956409B2/en
Priority to CN2008101497393A priority patent/CN101393915B/zh
Publication of JP2009076540A publication Critical patent/JP2009076540A/ja
Publication of JP2009076540A5 publication Critical patent/JP2009076540A5/ja
Pending legal-status Critical Current

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JP2007242011A 2007-09-19 2007-09-19 半導体装置 Pending JP2009076540A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007242011A JP2009076540A (ja) 2007-09-19 2007-09-19 半導体装置
US12/232,074 US7956409B2 (en) 2007-09-19 2008-09-10 Semiconductor device having trench gate structure
CN2008101497393A CN101393915B (zh) 2007-09-19 2008-09-19 具有沟槽栅极结构的半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007242011A JP2009076540A (ja) 2007-09-19 2007-09-19 半導体装置

Publications (2)

Publication Number Publication Date
JP2009076540A JP2009076540A (ja) 2009-04-09
JP2009076540A5 true JP2009076540A5 (enExample) 2010-09-16

Family

ID=40453518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007242011A Pending JP2009076540A (ja) 2007-09-19 2007-09-19 半導体装置

Country Status (3)

Country Link
US (1) US7956409B2 (enExample)
JP (1) JP2009076540A (enExample)
CN (1) CN101393915B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431484B2 (en) 2011-07-29 2016-08-30 Infineon Technologies Austria Ag Vertical transistor with improved robustness
CN103904124B (zh) * 2014-04-10 2016-08-17 电子科技大学 具有u型延伸栅的soi槽型ldmos器件
US10312233B2 (en) 2014-09-30 2019-06-04 Mitsubishi Electric Corporation Semiconductor device
US9905558B1 (en) * 2016-12-22 2018-02-27 Texas Instruments Incorporated Conductivity modulated drain extended MOSFET
US12068312B2 (en) 2019-03-22 2024-08-20 Hitachi Energy Ltd Reverse conducting insulated gate power semiconductor device having low conduction losses
JP7451981B2 (ja) 2019-12-10 2024-03-19 富士電機株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69617098T2 (de) * 1995-06-02 2002-04-18 Siliconix Inc Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer Anordnung
US5998837A (en) 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
US6204533B1 (en) * 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
US6351009B1 (en) 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
JP4059846B2 (ja) * 2003-12-26 2008-03-12 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2006012967A (ja) * 2004-06-23 2006-01-12 Toshiba Corp 半導体装置

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