KR101022867B1 - 파워 ｍｏｓｆｅｔ - Google Patents

파워 ｍｏｓｆｅｔ Download PDF

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Publication number
KR101022867B1
KR101022867B1 KR1020057006029A KR20057006029A KR101022867B1 KR 101022867 B1 KR101022867 B1 KR 101022867B1 KR 1020057006029 A KR1020057006029 A KR 1020057006029A KR 20057006029 A KR20057006029 A KR 20057006029A KR 101022867 B1 KR101022867 B1 KR 101022867B1
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South Korea
Prior art keywords
source
connecting plates
layer
drain
elements
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Expired - Fee Related
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KR1020057006029A
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English (en)
Korean (ko)
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KR20050075351A (ko
Inventor
쉔 쟁
Original Assignee
그레이트 웰 세미컨덕터
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Publication of KR20050075351A publication Critical patent/KR20050075351A/ko
Application granted granted Critical
Publication of KR101022867B1 publication Critical patent/KR101022867B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020057006029A 2002-10-08 2003-10-06 파워 ｍｏｓｆｅｔ Expired - Fee Related KR101022867B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41694202P 2002-10-08 2002-10-08
US60/416,942 2002-10-08
US10/601,121 2003-06-19
US10/601,121 US6972464B2 (en) 2002-10-08 2003-06-19 Power MOSFET

Publications (2)

Publication Number Publication Date
KR20050075351A KR20050075351A (ko) 2005-07-20
KR101022867B1 true KR101022867B1 (ko) 2011-03-16

Family

ID=32096175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057006029A Expired - Fee Related KR101022867B1 (ko) 2002-10-08 2003-10-06 파워 ｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US6972464B2 (enExample)
JP (1) JP4641259B2 (enExample)
KR (1) KR101022867B1 (enExample)
AU (1) AU2003284004A1 (enExample)
WO (1) WO2004034432A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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WO2005057626A2 (en) * 2003-12-04 2005-06-23 Great Wall Semiconductor Corporation System and method to reduce metal series resistance of bumped chip
WO2005059958A2 (en) 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Monolithic power semiconductor structures
WO2005059957A2 (en) * 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Metal interconnect system and method for direct die attachment
US7560808B2 (en) * 2005-10-19 2009-07-14 Texas Instruments Incorporated Chip scale power LDMOS device
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
JP4814770B2 (ja) * 2006-12-01 2011-11-16 パナソニック株式会社 半導体集積回路
JP2008218442A (ja) * 2007-02-28 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその製造方法
JP5586025B2 (ja) * 2007-06-18 2014-09-10 ミクロガン ゲーエムベーハー 基板の平面を全面に渡って覆うバスを備えた半導体部品、その製造方法、及び半導体部品を備えた装置
JP5326151B2 (ja) * 2007-12-26 2013-10-30 セイコーＮｐｃ株式会社 パワーｍｏｓトランジスタ
US8138787B2 (en) * 2008-07-13 2012-03-20 Altera Corporation Apparatus and method for input/output module that optimizes frequency performance in a circuit
US8648449B2 (en) * 2009-01-29 2014-02-11 International Rectifier Corporation Electrical connectivity for circuit applications
US9070670B2 (en) 2009-01-29 2015-06-30 International Rectifier Corporation Electrical connectivity of die to a host substrate
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
WO2011014951A1 (en) 2009-08-04 2011-02-10 John Roberts Island matrixed gallium nitride microwave and power switching transistors
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US8399912B2 (en) * 2010-02-16 2013-03-19 International Rectifier Corporation III-nitride power device with solderable front metal
US8581343B1 (en) * 2010-07-06 2013-11-12 International Rectifier Corporation Electrical connectivity for circuit applications
US8692360B1 (en) 2010-07-06 2014-04-08 International Rectifier Corporation Electrical connectivity for circuit applications
US9006099B2 (en) 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
EP2830904B1 (en) * 2012-03-26 2017-12-06 Raval A.C.S. LTD Fuel-vapour valve system and components therefor
WO2014028964A1 (en) * 2012-08-22 2014-02-27 Newsouth Innovations Pty Ltd A method of forming a contact for a photovoltaic cell
US9786663B2 (en) 2013-08-23 2017-10-10 Qualcomm Incorporated Layout construction for addressing electromigration
US9972624B2 (en) 2013-08-23 2018-05-15 Qualcomm Incorporated Layout construction for addressing electromigration
JP6295065B2 (ja) 2013-11-20 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置
US9324819B1 (en) 2014-11-26 2016-04-26 Delta Electronics, Inc. Semiconductor device
CN107851583B (zh) * 2015-08-21 2021-04-02 日立汽车系统株式会社 半导体装置、半导体集成电路以及负载驱动装置
TWI748233B (zh) * 2018-08-29 2021-12-01 美商高效電源轉換公司 具有降低導通電阻之橫向功率元件
US11749670B2 (en) * 2020-05-18 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Power switch for backside power distribution
WO2022244700A1 (ja) * 2021-05-17 2022-11-24 株式会社村田製作所 半導体装置
CN114097080B (zh) 2021-07-01 2023-12-22 英诺赛科(苏州)科技有限公司 氮化物基多通道开关半导体器件和其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US20030036256A1 (en) * 2000-07-07 2003-02-20 Efland Taylor R. Integrated circuit with bonding layer over active circuitry

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
JP3405508B2 (ja) * 1997-05-30 2003-05-12 富士通株式会社 半導体集積回路
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6710441B2 (en) * 2000-07-13 2004-03-23 Isothermal Research Systems, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
DE60132855T2 (de) * 2000-07-27 2009-02-26 Texas Instruments Inc., Dallas Kontaktierungsstruktur einer integrierten Leistungsschaltung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US20030036256A1 (en) * 2000-07-07 2003-02-20 Efland Taylor R. Integrated circuit with bonding layer over active circuitry

Also Published As

Publication number Publication date
WO2004034432A9 (en) 2005-11-17
JP4641259B2 (ja) 2011-03-02
US20050017299A1 (en) 2005-01-27
KR20050075351A (ko) 2005-07-20
WO2004034432A2 (en) 2004-04-22
AU2003284004A8 (en) 2004-05-04
AU2003284004A1 (en) 2004-05-04
JP2006515956A (ja) 2006-06-08
US6972464B2 (en) 2005-12-06
WO2004034432A3 (en) 2005-04-28

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