ATE387012T1 - Kontaktierungsstruktur einer integrierten leistungsschaltung - Google Patents

Kontaktierungsstruktur einer integrierten leistungsschaltung

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Publication number
ATE387012T1
ATE387012T1 AT01000318T AT01000318T ATE387012T1 AT E387012 T1 ATE387012 T1 AT E387012T1 AT 01000318 T AT01000318 T AT 01000318T AT 01000318 T AT01000318 T AT 01000318T AT E387012 T1 ATE387012 T1 AT E387012T1
Authority
AT
Austria
Prior art keywords
contact pads
power
transistor
active components
metals
Prior art date
Application number
AT01000318T
Other languages
English (en)
Inventor
Taylor R Efland
Sameer Pendharkar
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of ATE387012T1 publication Critical patent/ATE387012T1/de

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT01000318T 2000-07-27 2001-07-27 Kontaktierungsstruktur einer integrierten leistungsschaltung ATE387012T1 (de)

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