JPS5992537A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5992537A
JPS5992537A JP57201953A JP20195382A JPS5992537A JP S5992537 A JPS5992537 A JP S5992537A JP 57201953 A JP57201953 A JP 57201953A JP 20195382 A JP20195382 A JP 20195382A JP S5992537 A JPS5992537 A JP S5992537A
Authority
JP
Japan
Prior art keywords
film
electrode
copper
aluminum
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57201953A
Other languages
English (en)
Inventor
Toru Kawanobe
川野辺　徹
Keiji Miyamoto
宮本　圭二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57201953A priority Critical patent/JPS5992537A/ja
Publication of JPS5992537A publication Critical patent/JPS5992537A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/05147—Copper [Cu] as principal constituent
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    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、半導体装置の電極（ポンディングパッド）に
関する。
半導体装置の電極は、一般に第１図の如く、シリコン基
板１１上にＳｉｎ、膜１２を介して設けられたアルミニ
ウム又は、その合金１４からなっている。しかしアルミ
ニウムは、耐食性におとり、レジンモールドされた装置
では、アルミニウム電極の腐食が大きな問題となってい
る。これを防止するためには、電極を耐食性ある金属で
形成することが考えられる。その−例として、ベル研究
所のビームリード法、これを改良したＲＣＡ社のトライ
メタル電極（第２図参照：Ａ形１４−Ｐｔ１５−Ａｕ１
６の三層構造）が知られている。しかし、これらはいず
れも工程が複雑で材料費も多くかかるために、一般には
あまり普及していない。
本発明は、安価で耐食性の良い電極を有する半導体装置
を提供することを目的とする。本発明によれば、電極金
属の保護膜の主材料として安価な銅等を用い、この金属
が酸化してボンディング性の劣化することを防ぐために
、薄い金等の貴金属膜を表面に形成している。
シリコン基板１１上にシリコン酸化膜（Ｓｉｎ。
膜）１２を介して、アルミニウム又はアルミニウム合金
１４の電極が形成されている。この上に形成された保護
膜１３上に、真空蒸着、スパッタ法により形成された第
１層としてのチタン膜２５、第２層としての銅膜２６が
ある。さらにこの上に化学メッキにより形成された第３
層としての金膜２７がある。電極部以外のチタン膜２５
．銅膜２６゜金膜２７はホトエツチングにより除去する
。このように形成された電極は、下層として比較的軟質
のアルミニウム層、＠層があるためボンディングの荷重
によるクラック発生が防止できる。また、最上層が酸化
しにくい貴金属層なので、金線等とのボンディング性が
よい。又、腐食しやすいアルミニウム層が、耐食性が大
きい金属でおおわれているため腐食にも強い。一方、加
工費も、材料費が少なく、工程も若干増えるだけである
ので、さほど上らない。
これまでチタン、＠、金の組合せについて説明したが、
第１層の金属は、アルミニウムと第２層の保腹膜との接
着層であり、チタンの他クロム。
タングステン、モリブデン等のアルミニウムと反応性の
少ない金属を使用することも出来る。第２層の金属は、
第１層金属を通してアルミニウムと反応しにく（かつ比
較的耐食性のよい金属として、銅の他に鉄、ニッケル等
を使用することが可能である。第３層の金属は、第２層
金属の酸化を防ぎ、ボンディング性を保持、向上させる
目的のものであり、金の他銀、パラジウム等も用いるこ
とができる〇
【図面の簡単な説明】
第１図はアルミニウム又はアルミニウム合金により形成
された電極、 第２図はトライメタル電極、 第３図は本発明の実施例の電極を示す。 尚、図面に使用している符号は、 １１・・・シリコン基板、１２・・・シリコン酸化膜、
１３・・・表面保護膜、１４・・・アルミニウム又はア
ルミニウム合金パッド、２５・・・第１層保護膜、２６
・・・第２層保護膜、２７・・・第３層保護膜である。 ＝１７

Claims (1)

  1. 【特許請求の範囲】 １、アルミニウム又はその合金膜と、その上のこれと反
    応性の少ない第１の金属膜と、その上の銅。 鉄、ニッケル又はこれ等の合金より選んだ第２の金属膜
    と、さらにその上の貴金属膜とからなる電極を有するこ
    とを特徴とする半導体装置。 ２、前記第１層の金属としてチタン、クロム又はその合
    金、前記第２１金属として銅、前記第３層の金属として
    金又は銀を夫々用いたことを特徴とする特許請求の範囲
    第１項記載の半導体装置。
JP57201953A 1982-11-19 1982-11-19 半導体装置 Pending JPS5992537A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57201953A JPS5992537A (ja) 1982-11-19 1982-11-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57201953A JPS5992537A (ja) 1982-11-19 1982-11-19 半導体装置

Publications (1)

Publication Number Publication Date
JPS5992537A true JPS5992537A (ja) 1984-05-28

Family

ID=16449505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57201953A Pending JPS5992537A (ja) 1982-11-19 1982-11-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS5992537A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
US5783485A (en) * 1996-07-19 1998-07-21 Motorola, Inc. Process for fabricating a metallized interconnect
EP1176640A3 (en) * 2000-07-27 2004-03-17 Texas Instruments Incorporated Contact structure of an integrated power circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
US5783485A (en) * 1996-07-19 1998-07-21 Motorola, Inc. Process for fabricating a metallized interconnect
EP1176640A3 (en) * 2000-07-27 2004-03-17 Texas Instruments Incorporated Contact structure of an integrated power circuit

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