JP2006500781A5 - - Google Patents

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Publication number
JP2006500781A5
JP2006500781A5 JP2004539866A JP2004539866A JP2006500781A5 JP 2006500781 A5 JP2006500781 A5 JP 2006500781A5 JP 2004539866 A JP2004539866 A JP 2004539866A JP 2004539866 A JP2004539866 A JP 2004539866A JP 2006500781 A5 JP2006500781 A5 JP 2006500781A5
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JP
Japan
Prior art keywords
etching
depth
rate
etch
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004539866A
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English (en)
Japanese (ja)
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JP2006500781A (ja
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Publication date
Priority claimed from US10/256,251 external-priority patent/US6939811B2/en
Application filed filed Critical
Publication of JP2006500781A publication Critical patent/JP2006500781A/ja
Publication of JP2006500781A5 publication Critical patent/JP2006500781A5/ja
Pending legal-status Critical Current

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JP2004539866A 2002-09-25 2003-09-18 エッチング深度を制御する装置及び方法 Pending JP2006500781A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/256,251 US6939811B2 (en) 2002-09-25 2002-09-25 Apparatus and method for controlling etch depth
PCT/US2003/030117 WO2004030050A2 (en) 2002-09-25 2003-09-18 Apparatus and method for controlling etch depth

Publications (2)

Publication Number Publication Date
JP2006500781A JP2006500781A (ja) 2006-01-05
JP2006500781A5 true JP2006500781A5 (enExample) 2006-10-26

Family

ID=32041765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004539866A Pending JP2006500781A (ja) 2002-09-25 2003-09-18 エッチング深度を制御する装置及び方法

Country Status (10)

Country Link
US (1) US6939811B2 (enExample)
EP (1) EP1543547B1 (enExample)
JP (1) JP2006500781A (enExample)
KR (1) KR101116589B1 (enExample)
CN (1) CN100449706C (enExample)
AT (1) ATE499701T1 (enExample)
AU (1) AU2003275221A1 (enExample)
DE (1) DE60336150D1 (enExample)
TW (1) TWI324356B (enExample)
WO (1) WO2004030050A2 (enExample)

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US7521332B2 (en) * 2007-03-23 2009-04-21 Alpha & Omega Semiconductor, Ltd Resistance-based etch depth determination for SGT technology
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JP5308080B2 (ja) * 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
CN102044431A (zh) * 2009-10-20 2011-05-04 中芯国际集成电路制造(上海)有限公司 刻蚀方法和刻蚀系统
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
US12226301B2 (en) * 2011-05-09 2025-02-18 Vactronix Scientific, Llc Method of making topographical features and patterns on a surface of a medical device
US9050394B2 (en) * 2011-05-09 2015-06-09 Palmaz Scientific, Inc. Method for making topographical features on a surface of a medical device
JP5792613B2 (ja) * 2011-12-28 2015-10-14 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5724945B2 (ja) * 2012-05-18 2015-05-27 株式会社デンソー 炭化珪素半導体装置の製造方法
US9275916B2 (en) * 2013-05-03 2016-03-01 Infineon Technologies Ag Removable indicator structure in electronic chips of a common substrate for process adjustment
CN104377141B (zh) * 2013-08-16 2017-05-03 无锡华润华晶微电子有限公司 检测晶片深沟槽结构的实际关键尺寸及是否过刻蚀的方法
US9484214B2 (en) 2014-02-19 2016-11-01 Lam Research Corporation Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
US20160181111A1 (en) * 2014-12-19 2016-06-23 Lam Research Corporation Silicon etch and clean
US11107738B2 (en) 2016-11-16 2021-08-31 Nova Ltd. Layer detection for high aspect ratio etch control
CN110574397B (zh) * 2018-12-29 2021-04-27 共达电声股份有限公司 Mems声音传感器、mems麦克风及电子设备
CN111341656A (zh) * 2020-03-19 2020-06-26 常州星海电子股份有限公司 光阻玻璃芯片全自动腐蚀工艺
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply

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