JP2006352139A5 - - Google Patents

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Publication number
JP2006352139A5
JP2006352139A5 JP2006167635A JP2006167635A JP2006352139A5 JP 2006352139 A5 JP2006352139 A5 JP 2006352139A5 JP 2006167635 A JP2006167635 A JP 2006167635A JP 2006167635 A JP2006167635 A JP 2006167635A JP 2006352139 A5 JP2006352139 A5 JP 2006352139A5
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JP
Japan
Prior art keywords
active region
memory device
dielectric layer
oxide layer
region
Prior art date
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Granted
Application number
JP2006167635A
Other languages
English (en)
Japanese (ja)
Other versions
JP5114023B2 (ja
JP2006352139A (ja
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Publication date
Priority claimed from KR1020050052757A external-priority patent/KR100715228B1/ko
Application filed filed Critical
Publication of JP2006352139A publication Critical patent/JP2006352139A/ja
Publication of JP2006352139A5 publication Critical patent/JP2006352139A5/ja
Application granted granted Critical
Publication of JP5114023B2 publication Critical patent/JP5114023B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006167635A 2005-06-18 2006-06-16 曲面構造を有するソノスメモリ素子 Active JP5114023B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050052757A KR100715228B1 (ko) 2005-06-18 2005-06-18 곡면 구조를 갖는 소노스 메모리 소자 및 그 제조방법
KR10-2005-0052757 2005-06-18

Publications (3)

Publication Number Publication Date
JP2006352139A JP2006352139A (ja) 2006-12-28
JP2006352139A5 true JP2006352139A5 (enExample) 2009-07-09
JP5114023B2 JP5114023B2 (ja) 2013-01-09

Family

ID=37572565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006167635A Active JP5114023B2 (ja) 2005-06-18 2006-06-16 曲面構造を有するソノスメモリ素子

Country Status (3)

Country Link
US (2) US7560764B2 (enExample)
JP (1) JP5114023B2 (enExample)
KR (1) KR100715228B1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843244B1 (ko) * 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2007251132A (ja) * 2006-02-16 2007-09-27 Toshiba Corp Ｍｏｎｏｓ型不揮発性メモリセル、不揮発性メモリおよびその製造方法
US8772858B2 (en) * 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US7811890B2 (en) 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US7851848B2 (en) * 2006-11-01 2010-12-14 Macronix International Co., Ltd. Cylindrical channel charge trapping devices with effectively high coupling ratios
KR100855992B1 (ko) * 2007-04-02 2008-09-02 삼성전자주식회사 경사진 측벽을 갖는 활성 필라를 구비하는 비휘발성 메모리트랜지스터, 이를 구비하는 비휘발성 메모리 어레이 및상기 비휘발성 메모리 트랜지스터의 제조방법
JP2009016615A (ja) * 2007-07-05 2009-01-22 Toshiba Corp 半導体記憶装置
KR101566921B1 (ko) * 2009-01-05 2015-11-09 삼성전자주식회사 전하 트랩형 비휘발성 메모리 장치의 제조방법
US8860124B2 (en) * 2009-01-15 2014-10-14 Macronix International Co., Ltd. Depletion-mode charge-trapping flash device
KR20100095263A (ko) 2009-02-20 2010-08-30 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
KR20100111163A (ko) * 2009-04-06 2010-10-14 삼성전자주식회사 비휘발성 메모리 소자
KR101399610B1 (ko) * 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
US8471328B2 (en) 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
US8345526B2 (en) * 2010-12-29 2013-01-01 General Electric Company Non-binary holograms for increased capacity
US8772057B1 (en) 2011-05-13 2014-07-08 Cypress Semiconductor Corporation Inline method to monitor ONO stack quality
CN102280377B (zh) * 2011-08-26 2015-11-11 上海华虹宏力半导体制造有限公司 Sonos结构及其制作方法
CN102280387B (zh) * 2011-08-31 2016-05-04 上海华虹宏力半导体制造有限公司 Sonos结构和sonos存储器的形成方法
CN102280378B (zh) * 2011-08-31 2016-06-29 上海华虹宏力半导体制造有限公司 Sonos结构的形成方法
US8497171B1 (en) * 2012-07-05 2013-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET method and structure with embedded underlying anti-punch through layer
KR102003276B1 (ko) * 2013-02-14 2019-07-24 삼성전자 주식회사 반도체 소자 제조 방법
US9666449B2 (en) * 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9275905B1 (en) 2015-01-28 2016-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming semiconductor structure with anti-punch through structure
US9728646B2 (en) 2015-08-28 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Flat STI surface for gate oxide uniformity in Fin FET devices
CN115332346B (zh) 2018-01-05 2025-11-04 联华电子股份有限公司 半导体元件及其制作方法
US10727323B2 (en) * 2018-01-08 2020-07-28 International Business Machines Corporation Three-dimensional (3D) tunneling field-effect transistor (FET)
US10720444B2 (en) 2018-08-20 2020-07-21 Sandisk Technologies Llc Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903639B2 (ja) * 1990-05-28 1999-06-07 住友電気工業株式会社 酸化防止剤およびこれを含有する高分子組成物
JP3125353B2 (ja) * 1990-09-26 2001-01-15 松下電器産業株式会社 半導体記憶装置およびその製造方法
DE10129958B4 (de) * 2001-06-21 2006-07-13 Infineon Technologies Ag Speicherzellenanordnung und Herstellungsverfahren
JP3957482B2 (ja) * 2001-06-22 2007-08-15 富士雄 舛岡 半導体記憶装置
KR100431489B1 (ko) 2001-09-04 2004-05-12 한국과학기술원 플래쉬 메모리 소자 및 제조방법
JP2003218242A (ja) * 2002-01-24 2003-07-31 Hitachi Ltd 不揮発性半導体記憶装置およびその製造方法
KR100475081B1 (ko) * 2002-07-09 2005-03-10 삼성전자주식회사 Sonos형 eeprom 및 그 제조방법
US6963104B2 (en) * 2003-06-12 2005-11-08 Advanced Micro Devices, Inc. Non-volatile memory device
US7250651B2 (en) * 2004-08-19 2007-07-31 Infineon Technologies Ag Semiconductor memory device comprising memory cells with floating gate electrode and method of production
KR100612718B1 (ko) * 2004-12-10 2006-08-17 경북대학교 산학협력단 안장형 플래시 메모리 소자 및 제조방법

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