JP2006352139A - 曲面構造を有するソノスメモリ素子及びその製造方法 - Google Patents
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- 238000005530 etching Methods 0.000 claims description 32
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
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- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Abstract
【解決手段】アクティブ領域120とフィールド領域200とを有する半導体基板100と、アクティブ領域120の上部に一定の距離で離隔されて形成されたソース領域及びドレイン領域と、前記離隔された距離を含み、前記ソース領域及びドレイン領域上の一部に第1の酸化物層320a、窒化物層340、及び第2の酸化物層360が順次に形成された多重誘電層300と、多重誘電層300の上部に形成されたゲート400とから構成されたソノスメモリ素子において、アクティブ領域120の上部の表面は、曲面形状を有し、多重誘電層300は、アクティブ領域120の上部の表面の形状に沿って曲面形状を有し、ゲート400は、前記曲面形状の前記第2の酸化物層360を覆うようにする。
【選択図】図11c
Description
Dig. Symp. VLSI Tech., 1997, pp. 113−114 Ext. Abst. Int’l Conf.Solid State Dev. Materials, 2002,pp. 162−163 Tech. Dig. Int’l Electron Dev. Meet., 2003, pp. 613−616
前記アクティブ領域の上部の表面は曲面形状を有し、前記多重誘電層も前記アクティブ領域の上部の表面の形状に沿って曲面形状を有し、前記ゲートは、前記曲面形状の第2の酸化物層を覆うことを特徴とする。
120、120a アクティブ領域、
200、200a フィールド領域、
300 多重誘電層(ONO層)、
320、320a、320b 第1の酸化物層(トンネル酸化膜)、
340 窒化物層、
340a、340b 窒化膜、
360 第2の酸化物層(ブロッキング酸化膜)、
380 ハードマスク、
400 ゲート(コントロールゲート)。
Claims (12)
- アクティブ領域とフィールド領域とを有する半導体基板と、前記アクティブ領域の上部に一定の距離で離隔されて形成されたソース領域及びドレイン領域と、前記離隔された距離を含み、前記ソース領域及びドレイン領域上の一部に第1の酸化物層、窒化物層、及び第2の酸化物層が順次に形成された多重誘電層と、前記多重誘電層の上部に形成されたゲートとから構成されたソノス(SONOS)メモリ素子において、
前記アクティブ領域の上部の表面は、曲面形状を有し、
前記多重誘電層は、前記アクティブ領域の上部の表面の形状に沿って曲面形状を有し、
前記ゲートは、前記曲面形状の前記第2の酸化物層を覆うことを特徴とするソノスメモリ素子。 - 前記曲面形状は、円筒型であることを特徴とする請求項1に記載のソノスメモリ素子。
- 前記アクティブ領域の上部の表面の曲率半径は50nm以下であることを特徴とする請求項1または2に記載のソノスメモリ素子。
- 前記第2の酸化物層の上部の表面の曲率半径は、前記アクティブ領域の上部の表面の曲率半径より2倍以上であることを特徴とする請求項1または2に記載のソノスメモリ素子。
- 半導体基板の上部に絶縁膜を蒸着し、エッチングして所定のアクティブ領域を形成するためのマスクを形成する第1のステップと、
前記マスクを利用し、基板をエッチングしてフィン形状のアクティブ領域を作り、酸化膜で前記アクティブ領域の周辺にフィールド領域を形成する第2のステップと、
前記アクティブ領域とフィールド領域との上部を平坦化させ、前記アクティブ領域のフィン形状の一部が露出されるように、前記フィールド領域の酸化膜の一部をエッチングする第3のステップと、
前記一部突出したアクティブ領域のフィン形状を円筒型とするためのアニーリング工程を行う第4のステップと、
前記円筒型のアクティブ領域の上部と前記フィールド領域の上部に第1の酸化物層、窒化物層、及び第2の酸化物層を順次に積層して多重誘電層を形成し、前記多重誘電層の上部にゲート物質を蒸着し、エッチングしてコントロールゲートを形成する第5のステップと、
を含むことを特徴とするソノスメモリ素子の製造方法。 - 第1のステップにおいて、前記絶縁膜は窒化膜とし、
第3のステップにおいて、前記平坦化工程はCMPとし、前記窒化膜のマスクが一部露出されるように前記フィールド領域の酸化膜の一部をエッチングし、
第4のステップにおいては、前記アニーリング工程の代わりに酸化工程でアクティブ領域の上部の形状を円筒型とし、前記窒化膜と前記フィールド領域の酸化膜の一部をエッチングし、前記円筒型のアクティブ領域の上部が露出されるようにすることを特徴とする請求項5に記載のソノスメモリ素子の製造方法。 - 第1のステップにおいて、前記絶縁膜を蒸着する前に、前記半導体基板の上部に先ず酸化膜を薄く形成して、前記酸化膜の上部に前記絶縁膜として窒化膜を蒸着し、
第2のステップにおいては、先ず酸化工程でアクティブ領域となる上段を曲面とした後、前記マスクを利用し、前記半導体基板をエッチングしてフィン形状のアクティブ領域を作り、酸化膜で前記アクティブ領域の周辺にフィールド領域を作り、
第3のステップの前記平坦化工程はCMPとし、
第4のステップの前記アニーリング工程は、第2のステップの酸化工程に代替されることを特徴とする請求項5に記載のソノスメモリ素子の製造方法。 - 第3のステップにおいて、前記平坦化工程はCMPとし、前記平坦化工程後のフィールド領域の酸化膜の一部をエッチングする前に、前記アクティブ領域の上部に先ずハードマスクを形成し、前記ハードマスクと前記フィールド領域の酸化膜の一部をエッチングしてアクティブ領域のフィン形状を突出させ、
第4のステップにおいて、前記アニーリング工程を行う前に、前記ハードマスクを先ず除去することを特徴とする請求項5に記載のソノスメモリ素子の製造方法。 - 第3のステップの前記ハードマスクと前記フィールド領域の酸化膜のエッチング工程は、等方性エッチング方式を利用して前記アクティブ領域のフィン形状の突出がなく、
第4のステップの前記アニーリング工程と前記ハードマスクの除去工程の代わりに、前記フィールド領域の酸化膜の一部をエッチングする工程に代替されることを特徴とする請求項8に記載のソノスメモリ素子の製造方法。 - 第1のステップの前に、前記半導体基板の上部に絶縁膜を蒸着してエッチングし、先ずチャンネル長さと同じ幅を有する微細パターンのマスクを形成し、ソース及びドレインの形成のためのイオンドーピングを行うステップを更に含むことを特徴とする請求項5〜9のいずれか一項に記載のソノスメモリ素子の製造方法。
- 第5のステップにおけるコントロールゲートの形成時のエッチング工程は、前記多重誘電層の上部に蒸着されたゲート物質だけでなく、エッチングされる前記ゲート物質の下部にある多重誘電層も共にエッチングされることを特徴とする請求項5乃至9のいずれかに記載のソノスメモリ素子の製造方法。
- 第5のステップにおけるエッチング工程で露出されたアクティブ領域及びフィールド領域の上部と前記コントロールゲートの上部にイオン注入工程を更に含むことを特徴とする請求項11に記載のソノスメモリ素子の製造方法。
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US20060284245A1 (en) | 2006-12-21 |
US7560764B2 (en) | 2009-07-14 |
KR20060132418A (ko) | 2006-12-21 |
JP5114023B2 (ja) | 2013-01-09 |
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US7838365B2 (en) | 2010-11-23 |
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