JP2006332654A - 放射システム及びリソグラフィ装置 - Google Patents
放射システム及びリソグラフィ装置 Download PDFInfo
- Publication number
- JP2006332654A JP2006332654A JP2006139772A JP2006139772A JP2006332654A JP 2006332654 A JP2006332654 A JP 2006332654A JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006332654 A JP2006332654 A JP 2006332654A
- Authority
- JP
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- Prior art keywords
- radiation
- silver film
- euv
- radiation system
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 135
- 229910052709 silver Inorganic materials 0.000 claims abstract description 128
- 239000004332 silver Substances 0.000 claims abstract description 128
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 127
- 238000011109 contamination Methods 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000356 contaminant Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000059 patterning Methods 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052718 tin Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 104
- 230000003287 optical effect Effects 0.000 description 22
- 230000000694 effects Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- FSVVWABMXMMPEE-UHFFFAOYSA-N molybdenum silver Chemical compound [Mo][Ag][Mo] FSVVWABMXMMPEE-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Nanotechnology (AREA)
- Health & Medical Sciences (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/133,460 US7233010B2 (en) | 2005-05-20 | 2005-05-20 | Radiation system and lithographic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006332654A true JP2006332654A (ja) | 2006-12-07 |
| JP2006332654A5 JP2006332654A5 (enExample) | 2009-10-15 |
Family
ID=37447506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006139772A Pending JP2006332654A (ja) | 2005-05-20 | 2006-05-19 | 放射システム及びリソグラフィ装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7233010B2 (enExample) |
| JP (1) | JP2006332654A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194590A (ja) * | 2005-11-23 | 2007-08-02 | Asml Netherlands Bv | 放射システムおよびリソグラフィ装置 |
| JP2008166772A (ja) * | 2006-12-27 | 2008-07-17 | Asml Netherlands Bv | デブリ低減システム及びリソグラフィ装置 |
| JP2008288590A (ja) * | 2007-05-21 | 2008-11-27 | Asml Netherlands Bv | 放射源、反射器及び汚染物バリアを備えるアセンブリ |
| JP2008294436A (ja) * | 2007-05-02 | 2008-12-04 | Asml Netherlands Bv | 放射に関する量を測定するデバイスおよびリソグラフィ装置 |
| JP2009267407A (ja) * | 2008-04-29 | 2009-11-12 | Asml Netherlands Bv | 放射源 |
| JP2010093249A (ja) * | 2008-09-25 | 2010-04-22 | Asml Netherlands Bv | ソースモジュール、放射ソースおよびリソグラフィ装置 |
| JP2010514157A (ja) * | 2006-12-13 | 2010-04-30 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射システムおよびリソグラフィ装置 |
| JP2010514156A (ja) * | 2006-12-13 | 2010-04-30 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射システム及びリソグラフィ装置 |
| JP2010153857A (ja) * | 2008-12-18 | 2010-07-08 | Asml Netherlands Bv | 放射源、リソグラフィ装置及びデバイス製造方法 |
| JP2010539699A (ja) * | 2007-09-14 | 2010-12-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 回転フィルタデバイスを有するリソグラフィ装置 |
| JP2013505573A (ja) * | 2009-09-18 | 2013-02-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された耐熱性を持つホイルトラップ装置 |
| CN101971100B (zh) * | 2008-03-03 | 2013-10-16 | Asml荷兰有限公司 | 光刻设备、等离子体源以及反射方法 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| TWI230847B (en) * | 2002-12-23 | 2005-04-11 | Asml Netherlands Bv | Contamination barrier with expandable lamellas |
| SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
| SG123767A1 (en) | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, illumination system and filter system |
| JP4366358B2 (ja) * | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
| US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
| US7231017B2 (en) * | 2005-07-27 | 2007-06-12 | Physical Optics Corporation | Lobster eye X-ray imaging system and method of fabrication thereof |
| US7332731B2 (en) * | 2005-12-06 | 2008-02-19 | Asml Netherlands, B.V. | Radiation system and lithographic apparatus |
| US7465943B2 (en) * | 2005-12-08 | 2008-12-16 | Asml Netherlands B.V. | Controlling the flow through the collector during cleaning |
| US7468521B2 (en) * | 2005-12-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
| US7368733B2 (en) * | 2006-03-30 | 2008-05-06 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
| US7442948B2 (en) * | 2006-05-15 | 2008-10-28 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus |
| EP2215527A2 (en) * | 2007-11-22 | 2010-08-11 | Philips Intellectual Property & Standards GmbH | Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device |
| EP2157481A3 (en) * | 2008-08-14 | 2012-06-13 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| JP2011198609A (ja) * | 2010-03-19 | 2011-10-06 | Ushio Inc | 極端紫外光光源装置における照度分布検出方法および集光光学手段の位置調整方法 |
| US8395079B2 (en) | 2010-07-12 | 2013-03-12 | Lawrence Livermore National Security, Llc | Method and system for high power reflective optical elements |
| US9036781B1 (en) * | 2012-10-12 | 2015-05-19 | The Boeing Company | Amplified backscatter x-ray inspection system |
| CN107632501A (zh) * | 2017-09-21 | 2018-01-26 | 武汉华星光电技术有限公司 | 一种烘烤装置及烘烤方法 |
| US12158706B2 (en) | 2019-07-09 | 2024-12-03 | Asml Netherlands B.V. | Lithographic apparatus and method with improved contaminant particle capture |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08159991A (ja) * | 1994-12-08 | 1996-06-21 | Nikon Corp | X線装置 |
| JP2001042098A (ja) * | 1999-03-15 | 2001-02-16 | Cymer Inc | プラズマフォーカス高エネルギフォトン源 |
| JP2002319537A (ja) * | 2001-01-23 | 2002-10-31 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 波長が193nm以下の照明光学系のための集光器 |
| JP2005129936A (ja) * | 2003-10-20 | 2005-05-19 | Asml Netherlands Bv | リソグラフィ機器で使用するミラー上での上部層の使用、リソグラフィ機器で使用するミラー、このようなミラーを備えるリソグラフィ機器、及びデバイスの製造方法 |
| US20050244572A1 (en) * | 2004-04-29 | 2005-11-03 | Robert Bristol | Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| US6459472B1 (en) * | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
| US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
| DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
| EP1532639A2 (en) | 2002-07-26 | 2005-05-25 | Bede Plc | Optical device for high energy radiation |
| KR100748447B1 (ko) * | 2002-08-23 | 2007-08-10 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어 |
| SG129259A1 (en) * | 2002-10-03 | 2007-02-26 | Asml Netherlands Bv | Radiation source lithographic apparatus, and device manufacturing method |
| US6982133B2 (en) * | 2002-12-21 | 2006-01-03 | Intel Corporation | Damage-resistant coatings for EUV lithography components |
| EP1434098B1 (en) | 2002-12-23 | 2006-03-08 | ASML Netherlands B.V. | Contamination barrier with expandable lamellas |
| TWI230847B (en) * | 2002-12-23 | 2005-04-11 | Asml Netherlands Bv | Contamination barrier with expandable lamellas |
| US7049614B2 (en) * | 2003-03-10 | 2006-05-23 | Intel Corporation | Electrode in a discharge produced plasma extreme ultraviolet source |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| EP1491963A3 (en) | 2003-06-27 | 2005-08-17 | ASML Netherlands B.V. | Laser produced plasma radiation system with contamination barrier |
| US7030958B2 (en) * | 2003-12-31 | 2006-04-18 | Asml Netherlands B.V. | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
| US7307263B2 (en) * | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
| US7145132B2 (en) * | 2004-12-27 | 2006-12-05 | Asml Netherlands B.V. | Lithographic apparatus, illumination system and debris trapping system |
| US7414251B2 (en) * | 2004-12-28 | 2008-08-19 | Asml Netherlands B.V. | Method for providing an operable filter system for filtering particles out of a beam of radiation, filter system, apparatus and lithographic apparatus comprising the filter system |
| SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
| US7453645B2 (en) * | 2004-12-30 | 2008-11-18 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
| US7106832B2 (en) * | 2005-01-10 | 2006-09-12 | Asml Netherlands B.V. | Apparatus including a radiation source, a filter system for filtering particles out of radiation emitted by the source, and a processing system for processing the radiation, a lithographic apparatus including such an apparatus, and a method of filtering particles out of radiation emitting and propagating from a radiation source |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
| US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
-
2005
- 2005-05-20 US US11/133,460 patent/US7233010B2/en not_active Expired - Fee Related
-
2006
- 2006-05-19 JP JP2006139772A patent/JP2006332654A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08159991A (ja) * | 1994-12-08 | 1996-06-21 | Nikon Corp | X線装置 |
| JP2001042098A (ja) * | 1999-03-15 | 2001-02-16 | Cymer Inc | プラズマフォーカス高エネルギフォトン源 |
| JP2002319537A (ja) * | 2001-01-23 | 2002-10-31 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 波長が193nm以下の照明光学系のための集光器 |
| JP2005129936A (ja) * | 2003-10-20 | 2005-05-19 | Asml Netherlands Bv | リソグラフィ機器で使用するミラー上での上部層の使用、リソグラフィ機器で使用するミラー、このようなミラーを備えるリソグラフィ機器、及びデバイスの製造方法 |
| US20050244572A1 (en) * | 2004-04-29 | 2005-11-03 | Robert Bristol | Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194590A (ja) * | 2005-11-23 | 2007-08-02 | Asml Netherlands Bv | 放射システムおよびリソグラフィ装置 |
| JP2010514157A (ja) * | 2006-12-13 | 2010-04-30 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射システムおよびリソグラフィ装置 |
| JP2012109613A (ja) * | 2006-12-13 | 2012-06-07 | Asml Netherlands Bv | 放射システム及びリソグラフィ装置 |
| JP2010514156A (ja) * | 2006-12-13 | 2010-04-30 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射システム及びリソグラフィ装置 |
| JP2008166772A (ja) * | 2006-12-27 | 2008-07-17 | Asml Netherlands Bv | デブリ低減システム及びリソグラフィ装置 |
| JP2008294436A (ja) * | 2007-05-02 | 2008-12-04 | Asml Netherlands Bv | 放射に関する量を測定するデバイスおよびリソグラフィ装置 |
| JP2008288590A (ja) * | 2007-05-21 | 2008-11-27 | Asml Netherlands Bv | 放射源、反射器及び汚染物バリアを備えるアセンブリ |
| JP2010539699A (ja) * | 2007-09-14 | 2010-12-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 回転フィルタデバイスを有するリソグラフィ装置 |
| CN101971100B (zh) * | 2008-03-03 | 2013-10-16 | Asml荷兰有限公司 | 光刻设备、等离子体源以及反射方法 |
| JP2009267407A (ja) * | 2008-04-29 | 2009-11-12 | Asml Netherlands Bv | 放射源 |
| JP2012074388A (ja) * | 2008-04-29 | 2012-04-12 | Asml Netherlands Bv | 放射源 |
| US8242471B2 (en) | 2008-04-29 | 2012-08-14 | Asml Netherlands B.V. | Radiation source and lithographic apparatus including a contamination trap |
| JP2010093249A (ja) * | 2008-09-25 | 2010-04-22 | Asml Netherlands Bv | ソースモジュール、放射ソースおよびリソグラフィ装置 |
| JP2010153857A (ja) * | 2008-12-18 | 2010-07-08 | Asml Netherlands Bv | 放射源、リソグラフィ装置及びデバイス製造方法 |
| JP2013505573A (ja) * | 2009-09-18 | 2013-02-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された耐熱性を持つホイルトラップ装置 |
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| Publication number | Publication date |
|---|---|
| US20060261290A1 (en) | 2006-11-23 |
| US7233010B2 (en) | 2007-06-19 |
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