JP2006332654A - 放射システム及びリソグラフィ装置 - Google Patents

放射システム及びリソグラフィ装置 Download PDF

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Publication number
JP2006332654A
JP2006332654A JP2006139772A JP2006139772A JP2006332654A JP 2006332654 A JP2006332654 A JP 2006332654A JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006332654 A JP2006332654 A JP 2006332654A
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Prior art keywords
radiation
silver film
euv
radiation system
source
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Japanese (ja)
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JP2006332654A5 (enExample
Inventor
Herpen Maarten Marinus Johannes Wilhelmus Van
マリヌス ヨハネス ウィルヘルムス ファン ヘルペン マールテン
Yevgenyevich Banine Vadim
イェフゲンイェフィチ バニーネ ファディム
Arnoud Cornelis Wassink
コーネリス ヴァッシンク アーノウド
Derk Jan Wilfred Klunder
ヤン ヴィルフレッド クルンデル デルク
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2006332654A publication Critical patent/JP2006332654A/ja
Publication of JP2006332654A5 publication Critical patent/JP2006332654A5/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70166Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006139772A 2005-05-20 2006-05-19 放射システム及びリソグラフィ装置 Pending JP2006332654A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/133,460 US7233010B2 (en) 2005-05-20 2005-05-20 Radiation system and lithographic apparatus

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JP2006332654A true JP2006332654A (ja) 2006-12-07
JP2006332654A5 JP2006332654A5 (enExample) 2009-10-15

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JP2006139772A Pending JP2006332654A (ja) 2005-05-20 2006-05-19 放射システム及びリソグラフィ装置

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JP (1) JP2006332654A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194590A (ja) * 2005-11-23 2007-08-02 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
JP2008166772A (ja) * 2006-12-27 2008-07-17 Asml Netherlands Bv デブリ低減システム及びリソグラフィ装置
JP2008288590A (ja) * 2007-05-21 2008-11-27 Asml Netherlands Bv 放射源、反射器及び汚染物バリアを備えるアセンブリ
JP2008294436A (ja) * 2007-05-02 2008-12-04 Asml Netherlands Bv 放射に関する量を測定するデバイスおよびリソグラフィ装置
JP2009267407A (ja) * 2008-04-29 2009-11-12 Asml Netherlands Bv 放射源
JP2010093249A (ja) * 2008-09-25 2010-04-22 Asml Netherlands Bv ソースモジュール、放射ソースおよびリソグラフィ装置
JP2010514157A (ja) * 2006-12-13 2010-04-30 エーエスエムエル ネザーランズ ビー.ブイ. 放射システムおよびリソグラフィ装置
JP2010514156A (ja) * 2006-12-13 2010-04-30 エーエスエムエル ネザーランズ ビー.ブイ. 放射システム及びリソグラフィ装置
JP2010153857A (ja) * 2008-12-18 2010-07-08 Asml Netherlands Bv 放射源、リソグラフィ装置及びデバイス製造方法
JP2010539699A (ja) * 2007-09-14 2010-12-16 エーエスエムエル ネザーランズ ビー.ブイ. 回転フィルタデバイスを有するリソグラフィ装置
JP2013505573A (ja) * 2009-09-18 2013-02-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 改善された耐熱性を持つホイルトラップ装置
CN101971100B (zh) * 2008-03-03 2013-10-16 Asml荷兰有限公司 光刻设备、等离子体源以及反射方法

Families Citing this family (21)

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NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
TWI230847B (en) * 2002-12-23 2005-04-11 Asml Netherlands Bv Contamination barrier with expandable lamellas
SG123770A1 (en) * 2004-12-28 2006-07-26 Asml Netherlands Bv Lithographic apparatus, radiation system and filt er system
SG123767A1 (en) 2004-12-28 2006-07-26 Asml Netherlands Bv Lithographic apparatus, illumination system and filter system
JP4366358B2 (ja) * 2004-12-29 2009-11-18 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法
US7397056B2 (en) * 2005-07-06 2008-07-08 Asml Netherlands B.V. Lithographic apparatus, contaminant trap, and device manufacturing method
US7231017B2 (en) * 2005-07-27 2007-06-12 Physical Optics Corporation Lobster eye X-ray imaging system and method of fabrication thereof
US7332731B2 (en) * 2005-12-06 2008-02-19 Asml Netherlands, B.V. Radiation system and lithographic apparatus
US7465943B2 (en) * 2005-12-08 2008-12-16 Asml Netherlands B.V. Controlling the flow through the collector during cleaning
US7468521B2 (en) * 2005-12-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7453071B2 (en) * 2006-03-29 2008-11-18 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
US7368733B2 (en) * 2006-03-30 2008-05-06 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
US7442948B2 (en) * 2006-05-15 2008-10-28 Asml Netherlands B.V. Contamination barrier and lithographic apparatus
EP2215527A2 (en) * 2007-11-22 2010-08-11 Philips Intellectual Property & Standards GmbH Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device
EP2157481A3 (en) * 2008-08-14 2012-06-13 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP2011198609A (ja) * 2010-03-19 2011-10-06 Ushio Inc 極端紫外光光源装置における照度分布検出方法および集光光学手段の位置調整方法
US8395079B2 (en) 2010-07-12 2013-03-12 Lawrence Livermore National Security, Llc Method and system for high power reflective optical elements
US9036781B1 (en) * 2012-10-12 2015-05-19 The Boeing Company Amplified backscatter x-ray inspection system
CN107632501A (zh) * 2017-09-21 2018-01-26 武汉华星光电技术有限公司 一种烘烤装置及烘烤方法
US12158706B2 (en) 2019-07-09 2024-12-03 Asml Netherlands B.V. Lithographic apparatus and method with improved contaminant particle capture

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JPH08159991A (ja) * 1994-12-08 1996-06-21 Nikon Corp X線装置
JP2001042098A (ja) * 1999-03-15 2001-02-16 Cymer Inc プラズマフォーカス高エネルギフォトン源
JP2002319537A (ja) * 2001-01-23 2002-10-31 Carl Zeiss Semiconductor Manufacturing Technologies Ag 波長が193nm以下の照明光学系のための集光器
JP2005129936A (ja) * 2003-10-20 2005-05-19 Asml Netherlands Bv リソグラフィ機器で使用するミラー上での上部層の使用、リソグラフィ機器で使用するミラー、このようなミラーを備えるリソグラフィ機器、及びデバイスの製造方法
US20050244572A1 (en) * 2004-04-29 2005-11-03 Robert Bristol Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system

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NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
US6459472B1 (en) * 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
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DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren
EP1532639A2 (en) 2002-07-26 2005-05-25 Bede Plc Optical device for high energy radiation
KR100748447B1 (ko) * 2002-08-23 2007-08-10 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
US6982133B2 (en) * 2002-12-21 2006-01-03 Intel Corporation Damage-resistant coatings for EUV lithography components
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US7049614B2 (en) * 2003-03-10 2006-05-23 Intel Corporation Electrode in a discharge produced plasma extreme ultraviolet source
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US7030958B2 (en) * 2003-12-31 2006-04-18 Asml Netherlands B.V. Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
US7307263B2 (en) * 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
US7145132B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and debris trapping system
US7414251B2 (en) * 2004-12-28 2008-08-19 Asml Netherlands B.V. Method for providing an operable filter system for filtering particles out of a beam of radiation, filter system, apparatus and lithographic apparatus comprising the filter system
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US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
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Publication number Priority date Publication date Assignee Title
JPH08159991A (ja) * 1994-12-08 1996-06-21 Nikon Corp X線装置
JP2001042098A (ja) * 1999-03-15 2001-02-16 Cymer Inc プラズマフォーカス高エネルギフォトン源
JP2002319537A (ja) * 2001-01-23 2002-10-31 Carl Zeiss Semiconductor Manufacturing Technologies Ag 波長が193nm以下の照明光学系のための集光器
JP2005129936A (ja) * 2003-10-20 2005-05-19 Asml Netherlands Bv リソグラフィ機器で使用するミラー上での上部層の使用、リソグラフィ機器で使用するミラー、このようなミラーを備えるリソグラフィ機器、及びデバイスの製造方法
US20050244572A1 (en) * 2004-04-29 2005-11-03 Robert Bristol Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194590A (ja) * 2005-11-23 2007-08-02 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
JP2010514157A (ja) * 2006-12-13 2010-04-30 エーエスエムエル ネザーランズ ビー.ブイ. 放射システムおよびリソグラフィ装置
JP2012109613A (ja) * 2006-12-13 2012-06-07 Asml Netherlands Bv 放射システム及びリソグラフィ装置
JP2010514156A (ja) * 2006-12-13 2010-04-30 エーエスエムエル ネザーランズ ビー.ブイ. 放射システム及びリソグラフィ装置
JP2008166772A (ja) * 2006-12-27 2008-07-17 Asml Netherlands Bv デブリ低減システム及びリソグラフィ装置
JP2008294436A (ja) * 2007-05-02 2008-12-04 Asml Netherlands Bv 放射に関する量を測定するデバイスおよびリソグラフィ装置
JP2008288590A (ja) * 2007-05-21 2008-11-27 Asml Netherlands Bv 放射源、反射器及び汚染物バリアを備えるアセンブリ
JP2010539699A (ja) * 2007-09-14 2010-12-16 エーエスエムエル ネザーランズ ビー.ブイ. 回転フィルタデバイスを有するリソグラフィ装置
CN101971100B (zh) * 2008-03-03 2013-10-16 Asml荷兰有限公司 光刻设备、等离子体源以及反射方法
JP2009267407A (ja) * 2008-04-29 2009-11-12 Asml Netherlands Bv 放射源
JP2012074388A (ja) * 2008-04-29 2012-04-12 Asml Netherlands Bv 放射源
US8242471B2 (en) 2008-04-29 2012-08-14 Asml Netherlands B.V. Radiation source and lithographic apparatus including a contamination trap
JP2010093249A (ja) * 2008-09-25 2010-04-22 Asml Netherlands Bv ソースモジュール、放射ソースおよびリソグラフィ装置
JP2010153857A (ja) * 2008-12-18 2010-07-08 Asml Netherlands Bv 放射源、リソグラフィ装置及びデバイス製造方法
JP2013505573A (ja) * 2009-09-18 2013-02-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 改善された耐熱性を持つホイルトラップ装置

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US7233010B2 (en) 2007-06-19

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