JP2006332654A5 - - Google Patents
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- Publication number
- JP2006332654A5 JP2006332654A5 JP2006139772A JP2006139772A JP2006332654A5 JP 2006332654 A5 JP2006332654 A5 JP 2006332654A5 JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006139772 A JP2006139772 A JP 2006139772A JP 2006332654 A5 JP2006332654 A5 JP 2006332654A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- foil
- euv
- radiation system
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011888 foil Substances 0.000 claims description 110
- 230000005855 radiation Effects 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 43
- 238000011109 contamination Methods 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000000356 contaminant Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 22
- 230000000694 effects Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/133,460 US7233010B2 (en) | 2005-05-20 | 2005-05-20 | Radiation system and lithographic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006332654A JP2006332654A (ja) | 2006-12-07 |
| JP2006332654A5 true JP2006332654A5 (enExample) | 2009-10-15 |
Family
ID=37447506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006139772A Pending JP2006332654A (ja) | 2005-05-20 | 2006-05-19 | 放射システム及びリソグラフィ装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7233010B2 (enExample) |
| JP (1) | JP2006332654A (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| TWI230847B (en) * | 2002-12-23 | 2005-04-11 | Asml Netherlands Bv | Contamination barrier with expandable lamellas |
| SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
| SG123767A1 (en) | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, illumination system and filter system |
| JP4366358B2 (ja) * | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
| US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
| US7231017B2 (en) * | 2005-07-27 | 2007-06-12 | Physical Optics Corporation | Lobster eye X-ray imaging system and method of fabrication thereof |
| US20070115443A1 (en) * | 2005-11-23 | 2007-05-24 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| US7332731B2 (en) * | 2005-12-06 | 2008-02-19 | Asml Netherlands, B.V. | Radiation system and lithographic apparatus |
| US7465943B2 (en) * | 2005-12-08 | 2008-12-16 | Asml Netherlands B.V. | Controlling the flow through the collector during cleaning |
| US7468521B2 (en) * | 2005-12-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
| US7368733B2 (en) * | 2006-03-30 | 2008-05-06 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
| US7442948B2 (en) * | 2006-05-15 | 2008-10-28 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus |
| US7696493B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| US8071963B2 (en) * | 2006-12-27 | 2011-12-06 | Asml Netherlands B.V. | Debris mitigation system and lithographic apparatus |
| US7724349B2 (en) * | 2007-05-02 | 2010-05-25 | Asml Netherlands B.V. | Device arranged to measure a quantity relating to radiation and lithographic apparatus |
| US7839482B2 (en) * | 2007-05-21 | 2010-11-23 | Asml Netherlands B.V. | Assembly comprising a radiation source, a reflector and a contaminant barrier |
| US7700930B2 (en) * | 2007-09-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus with rotation filter device |
| EP2215527A2 (en) * | 2007-11-22 | 2010-08-11 | Philips Intellectual Property & Standards GmbH | Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device |
| NL1036613A1 (nl) * | 2008-03-03 | 2009-09-07 | Asml Netherlands Bv | Lithographic apparatus, plasma source, and reflecting method. |
| NL1036768A1 (nl) | 2008-04-29 | 2009-10-30 | Asml Netherlands Bv | Radiation source. |
| EP2157481A3 (en) * | 2008-08-14 | 2012-06-13 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
| EP2170021B1 (en) * | 2008-09-25 | 2015-11-04 | ASML Netherlands B.V. | Source module, radiation source and lithographic apparatus |
| US8232537B2 (en) * | 2008-12-18 | 2012-07-31 | Asml Netherlands, B.V. | Radiation source, lithographic apparatus and device manufacturing method |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| WO2011033447A1 (en) | 2009-09-18 | 2011-03-24 | Koninklijke Philips Electronics N.V. | Foil trap device with improved heat resistance |
| JP2011198609A (ja) * | 2010-03-19 | 2011-10-06 | Ushio Inc | 極端紫外光光源装置における照度分布検出方法および集光光学手段の位置調整方法 |
| US8395079B2 (en) | 2010-07-12 | 2013-03-12 | Lawrence Livermore National Security, Llc | Method and system for high power reflective optical elements |
| US9036781B1 (en) * | 2012-10-12 | 2015-05-19 | The Boeing Company | Amplified backscatter x-ray inspection system |
| CN107632501A (zh) * | 2017-09-21 | 2018-01-26 | 武汉华星光电技术有限公司 | 一种烘烤装置及烘烤方法 |
| US12158706B2 (en) | 2019-07-09 | 2024-12-03 | Asml Netherlands B.V. | Lithographic apparatus and method with improved contaminant particle capture |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3601089B2 (ja) * | 1994-12-08 | 2004-12-15 | 株式会社ニコン | Ｘ線装置 |
| US6541786B1 (en) * | 1997-05-12 | 2003-04-01 | Cymer, Inc. | Plasma pinch high energy with debris collector |
| NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| US6459472B1 (en) * | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
| US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
| DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
| EP1532639A2 (en) | 2002-07-26 | 2005-05-25 | Bede Plc | Optical device for high energy radiation |
| KR100748447B1 (ko) * | 2002-08-23 | 2007-08-10 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어 |
| SG129259A1 (en) * | 2002-10-03 | 2007-02-26 | Asml Netherlands Bv | Radiation source lithographic apparatus, and device manufacturing method |
| US6982133B2 (en) * | 2002-12-21 | 2006-01-03 | Intel Corporation | Damage-resistant coatings for EUV lithography components |
| EP1434098B1 (en) | 2002-12-23 | 2006-03-08 | ASML Netherlands B.V. | Contamination barrier with expandable lamellas |
| TWI230847B (en) * | 2002-12-23 | 2005-04-11 | Asml Netherlands Bv | Contamination barrier with expandable lamellas |
| US7049614B2 (en) * | 2003-03-10 | 2006-05-23 | Intel Corporation | Electrode in a discharge produced plasma extreme ultraviolet source |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| EP1491963A3 (en) | 2003-06-27 | 2005-08-17 | ASML Netherlands B.V. | Laser produced plasma radiation system with contamination barrier |
| EP1624467A3 (en) * | 2003-10-20 | 2007-05-30 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
| US7030958B2 (en) * | 2003-12-31 | 2006-04-18 | Asml Netherlands B.V. | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
| US7567379B2 (en) * | 2004-04-29 | 2009-07-28 | Intel Corporation | Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
| US7307263B2 (en) * | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
| US7145132B2 (en) * | 2004-12-27 | 2006-12-05 | Asml Netherlands B.V. | Lithographic apparatus, illumination system and debris trapping system |
| US7414251B2 (en) * | 2004-12-28 | 2008-08-19 | Asml Netherlands B.V. | Method for providing an operable filter system for filtering particles out of a beam of radiation, filter system, apparatus and lithographic apparatus comprising the filter system |
| SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
| US7453645B2 (en) * | 2004-12-30 | 2008-11-18 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
| US7106832B2 (en) * | 2005-01-10 | 2006-09-12 | Asml Netherlands B.V. | Apparatus including a radiation source, a filter system for filtering particles out of radiation emitted by the source, and a processing system for processing the radiation, a lithographic apparatus including such an apparatus, and a method of filtering particles out of radiation emitting and propagating from a radiation source |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
| US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
-
2005
- 2005-05-20 US US11/133,460 patent/US7233010B2/en not_active Expired - Fee Related
-
2006
- 2006-05-19 JP JP2006139772A patent/JP2006332654A/ja active Pending
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