JP2006310637A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006310637A JP2006310637A JP2005132761A JP2005132761A JP2006310637A JP 2006310637 A JP2006310637 A JP 2006310637A JP 2005132761 A JP2005132761 A JP 2005132761A JP 2005132761 A JP2005132761 A JP 2005132761A JP 2006310637 A JP2006310637 A JP 2006310637A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000003990 capacitor Substances 0.000 claims abstract description 83
- 230000001681 protective effect Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 59
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 16
- 238000000231 atomic layer deposition Methods 0.000 abstract description 28
- 239000010408 film Substances 0.000 description 293
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 34
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 19
- 229910052697 platinum Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000001603 reducing effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- -1 IrO 2 Chemical compound 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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Abstract
【解決手段】半導体基板(S)と、この半導体基板の上方に設けられた、誘電体膜(300)を下部電極(200)と上部電極(400)とで挟んでなるキャパシタと、このキャパシタを覆うよう形成された厚さ5nm以上50nm以下の酸化膜(125)と、この酸化膜の上側にALD法により形成された保護膜(126)と、を備えている。
【選択図】 図1
Description
図1の(a)〜(c)は、本第1の実施の形態に係るFeRAMの製造プロセスを示す断面図である。本第1の実施の形態では、キャパシタ下に位置するプラグ材にタングステンを用いたCOP型FeRAMセルについて述べる。
図2は、本第2の実施の形態に係るFeRAMの製造プロセスを示す断面図である。図2において図1の(a)〜(c)と同一な部分には同符号を付してある。
この半導体基板の上方に設けられた、誘電体膜を下部電極と上部電極とで挟んでなるキャパシタと、
このキャパシタを覆うよう形成された厚さ5nm以上50nm以下の酸化膜と、
この酸化膜の上側にALD法により形成された保護膜と、
を備えた半導体装置。
この半導体基板の上方に設けられた、誘電体膜を下部電極と上部電極とで挟んでなるキャパシタと、
前記上部電極の上方に形成された第1の酸化膜と、
前記第1の酸化膜の上側にALD法により形成された第1の保護膜と、
この第1の保護膜、前記第1の酸化膜、及び前記キャパシタを覆うよう形成された第2の酸化膜と、
この第2の酸化膜の上側にALD法により形成された第2の保護膜と、
を備えた半導体装置。
このキャパシタを覆うよう厚さ5nm以上50nm以下の酸化膜を形成し、
この酸化膜の上側にALD法により保護膜を形成する半導体装置の製造方法。
Claims (5)
- 半導体基板と、
この半導体基板の上方に設けられた、誘電体膜を下部電極と上部電極とで挟んでなるキャパシタと、
このキャパシタを覆うよう形成された厚さ5nm以上50nm以下の酸化膜と、
この酸化膜の上側にALD法により形成された保護膜と、
を備えたことを特徴とする半導体装置。 - 前記保護膜はAl酸化物からなることを特徴とする請求項1に記載の半導体装置。
- 前記酸化膜は、O3とTEOSを含むことを特徴とする請求項1または2に記載の半導体装置。
- 前記キャパシタと前記酸化膜との間に形成された密着層を備えることを特徴とする請求項1乃至3のいずれかに記載の半導体装置。
- 半導体基板と、
この半導体基板の上方に設けられた、誘電体膜を下部電極と上部電極とで挟んでなるキャパシタと、
前記上部電極の上方に形成された第1の酸化膜と、
前記第1の酸化膜の上側にALD法により形成された第1の保護膜と、
この第1の保護膜、前記第1の酸化膜、及び前記キャパシタを覆うよう形成された第2の酸化膜と、
この第2の酸化膜の上側にALD法により形成された第2の保護膜と、
を備えたことを特徴とする半導体装置。
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US11/170,316 US7573120B2 (en) | 2005-04-28 | 2005-06-30 | Semiconductor device and method of manufacturing the same |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006148061A (ja) * | 2004-10-19 | 2006-06-08 | Seiko Epson Corp | 強誘電体メモリおよびその製造方法 |
US7754501B2 (en) | 2007-05-24 | 2010-07-13 | Seiko Epson Corporation | Method for manufacturing ferroelectric capacitor |
US7812385B2 (en) | 2007-09-18 | 2010-10-12 | Seiko Epson Corporation | Ferroelectric capacitor device and method with optimum hysteresis characteristics |
US8039884B2 (en) | 2007-09-18 | 2011-10-18 | Seiko Epson Corporation | Semiconductor device having a contact hole with a curved cross-section and its manufacturing method |
US11164936B2 (en) | 2019-02-01 | 2021-11-02 | Fujitsu Semiconductor Memory Solution Limited | Semiconductor device fabrication method and semiconductor device |
Families Citing this family (1)
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US8395196B2 (en) | 2010-11-16 | 2013-03-12 | International Business Machines Corporation | Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001036026A (ja) * | 1999-05-14 | 2001-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2001111007A (ja) * | 1999-09-10 | 2001-04-20 | Samsung Electronics Co Ltd | キャパシタ保護膜を含む半導体メモリ素子及びその製造方法 |
JP2002100742A (ja) * | 2000-08-11 | 2002-04-05 | Samsung Electronics Co Ltd | 同一な物質よりなる二重膜を含む多重膜としてカプセル化されたキャパシタを備えた半導体メモリ素子及びその製造方法 |
JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002314047A (ja) * | 2001-04-17 | 2002-10-25 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2002353414A (ja) * | 2001-05-22 | 2002-12-06 | Oki Electric Ind Co Ltd | 誘電体キャパシタおよびその製造方法 |
JP2004349474A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
JP2005327847A (ja) * | 2004-05-13 | 2005-11-24 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3683972B2 (ja) * | 1995-03-22 | 2005-08-17 | 三菱電機株式会社 | 半導体装置 |
JP3027941B2 (ja) * | 1996-05-14 | 2000-04-04 | 日本電気株式会社 | 誘電体容量素子を用いた記憶装置及び製造方法 |
KR100269306B1 (ko) | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
US6509601B1 (en) * | 1998-07-31 | 2003-01-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor protection layer and method for manufacturing the same |
KR20020004539A (ko) | 2000-07-06 | 2002-01-16 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
US6617178B1 (en) * | 2002-07-02 | 2003-09-09 | Agilent Technologies, Inc | Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors |
JP4522088B2 (ja) * | 2003-12-22 | 2010-08-11 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-04-28 JP JP2005132761A patent/JP2006310637A/ja active Pending
- 2005-06-30 US US11/170,316 patent/US7573120B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001036026A (ja) * | 1999-05-14 | 2001-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2001111007A (ja) * | 1999-09-10 | 2001-04-20 | Samsung Electronics Co Ltd | キャパシタ保護膜を含む半導体メモリ素子及びその製造方法 |
JP2002100742A (ja) * | 2000-08-11 | 2002-04-05 | Samsung Electronics Co Ltd | 同一な物質よりなる二重膜を含む多重膜としてカプセル化されたキャパシタを備えた半導体メモリ素子及びその製造方法 |
JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002314047A (ja) * | 2001-04-17 | 2002-10-25 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2002353414A (ja) * | 2001-05-22 | 2002-12-06 | Oki Electric Ind Co Ltd | 誘電体キャパシタおよびその製造方法 |
JP2004349474A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
JP2005327847A (ja) * | 2004-05-13 | 2005-11-24 | Toshiba Corp | 半導体装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006148061A (ja) * | 2004-10-19 | 2006-06-08 | Seiko Epson Corp | 強誘電体メモリおよびその製造方法 |
JP4497312B2 (ja) * | 2004-10-19 | 2010-07-07 | セイコーエプソン株式会社 | 強誘電体メモリの製造方法 |
US7754501B2 (en) | 2007-05-24 | 2010-07-13 | Seiko Epson Corporation | Method for manufacturing ferroelectric capacitor |
US7812385B2 (en) | 2007-09-18 | 2010-10-12 | Seiko Epson Corporation | Ferroelectric capacitor device and method with optimum hysteresis characteristics |
US8039884B2 (en) | 2007-09-18 | 2011-10-18 | Seiko Epson Corporation | Semiconductor device having a contact hole with a curved cross-section and its manufacturing method |
US11164936B2 (en) | 2019-02-01 | 2021-11-02 | Fujitsu Semiconductor Memory Solution Limited | Semiconductor device fabrication method and semiconductor device |
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US20060244022A1 (en) | 2006-11-02 |
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