JP2006278661A - 光半導体素子及びその製造方法並びに光半導体装置 - Google Patents

光半導体素子及びその製造方法並びに光半導体装置 Download PDF

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Publication number
JP2006278661A
JP2006278661A JP2005094854A JP2005094854A JP2006278661A JP 2006278661 A JP2006278661 A JP 2006278661A JP 2005094854 A JP2005094854 A JP 2005094854A JP 2005094854 A JP2005094854 A JP 2005094854A JP 2006278661 A JP2006278661 A JP 2006278661A
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layer
ridge
semiconductor substrate
contact layer
semiconductor
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JP2005094854A
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Japanese (ja)
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JP2006278661A5 (https=
Inventor
Kazunori Saito
和徳 斉藤
Hiroshi Hamada
博 濱田
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Opnext Japan Inc
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Opnext Japan Inc
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Priority to JP2005094854A priority Critical patent/JP2006278661A/ja
Priority to US11/349,172 priority patent/US7463662B2/en
Publication of JP2006278661A publication Critical patent/JP2006278661A/ja
Publication of JP2006278661A5 publication Critical patent/JP2006278661A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2005094854A 2005-03-29 2005-03-29 光半導体素子及びその製造方法並びに光半導体装置 Pending JP2006278661A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005094854A JP2006278661A (ja) 2005-03-29 2005-03-29 光半導体素子及びその製造方法並びに光半導体装置
US11/349,172 US7463662B2 (en) 2005-03-29 2006-02-08 Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005094854A JP2006278661A (ja) 2005-03-29 2005-03-29 光半導体素子及びその製造方法並びに光半導体装置

Related Child Applications (1)

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JP2011161996A Division JP5292443B2 (ja) 2011-07-25 2011-07-25 光半導体素子の製造方法

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JP2006278661A true JP2006278661A (ja) 2006-10-12
JP2006278661A5 JP2006278661A5 (https=) 2007-11-08

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192846A (ja) * 2007-02-05 2008-08-21 Hamamatsu Photonics Kk 半導体発光素子および半導体発光素子製造方法
JP2008294252A (ja) * 2007-05-25 2008-12-04 Opnext Japan Inc 半導体レーザ素子及びその製造方法並びに光半導体装置の製造方法
JP2009049371A (ja) * 2007-07-26 2009-03-05 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2011222973A (ja) * 2010-03-25 2011-11-04 Nichia Chem Ind Ltd 半導体レーザ素子及びその製造方法
JP2015167263A (ja) * 2009-06-03 2015-09-24 日亜化学工業株式会社 半導体レーザ素子
JP6406477B1 (ja) * 2017-11-17 2018-10-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2024053222A1 (ja) * 2022-09-08 2024-03-14 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
JP5347236B2 (ja) * 2007-05-08 2013-11-20 三菱電機株式会社 半導体光素子の製造方法
CN113314952B (zh) * 2021-07-30 2021-11-09 华芯半导体研究院(北京)有限公司 具有斜坡pia结构的vcsel芯片及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5977222A (ja) * 1982-10-26 1984-05-02 Ishikawajima Harima Heavy Ind Co Ltd 焼却炉への給泥装置
JP2000076682A (ja) * 1998-09-01 2000-03-14 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2003046193A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004063711A (ja) * 2002-07-29 2004-02-26 Renesas Technology Corp 半導体レーザ素子及び半導体レーザ装置
JP2005064328A (ja) * 2003-08-18 2005-03-10 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法

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US5208821A (en) * 1992-01-24 1993-05-04 At&T Bell Laboratories Buried heterostructure lasers using MOCVD growth over patterned substrates
JP2000011417A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
DE60027949T2 (de) * 1999-02-23 2007-01-04 Mitsubishi Chemical Corp. Optische Halbleitervorrichtung
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
JP2003218469A (ja) 2002-01-22 2003-07-31 Toshiba Corp 窒化物系半導体レーザ装置
US7215886B2 (en) * 2002-02-04 2007-05-08 Hitachi, Ltd. Optical communication module
JP2004335530A (ja) * 2003-04-30 2004-11-25 Mitsubishi Electric Corp リッジ導波路型半導体レーザ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5977222A (ja) * 1982-10-26 1984-05-02 Ishikawajima Harima Heavy Ind Co Ltd 焼却炉への給泥装置
JP2000076682A (ja) * 1998-09-01 2000-03-14 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2003046193A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004063711A (ja) * 2002-07-29 2004-02-26 Renesas Technology Corp 半導体レーザ素子及び半導体レーザ装置
JP2005064328A (ja) * 2003-08-18 2005-03-10 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192846A (ja) * 2007-02-05 2008-08-21 Hamamatsu Photonics Kk 半導体発光素子および半導体発光素子製造方法
JP2008294252A (ja) * 2007-05-25 2008-12-04 Opnext Japan Inc 半導体レーザ素子及びその製造方法並びに光半導体装置の製造方法
JP2009049371A (ja) * 2007-07-26 2009-03-05 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP2015167263A (ja) * 2009-06-03 2015-09-24 日亜化学工業株式会社 半導体レーザ素子
JP2011222973A (ja) * 2010-03-25 2011-11-04 Nichia Chem Ind Ltd 半導体レーザ素子及びその製造方法
JP6406477B1 (ja) * 2017-11-17 2018-10-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2019097687A1 (ja) * 2017-11-17 2019-05-23 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2024053222A1 (ja) * 2022-09-08 2024-03-14 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

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US7463662B2 (en) 2008-12-09

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