JP2006270097A - 膜質の安定な低誘電率膜の形成方法 - Google Patents
膜質の安定な低誘電率膜の形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 239000007789 gas Substances 0.000 claims abstract description 136
- 239000010408 film Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000011261 inert gas Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 13
- 239000012495 reaction gas Substances 0.000 claims abstract description 6
- 239000000654 additive Substances 0.000 claims description 50
- 230000000996 additive effect Effects 0.000 claims description 50
- 230000006378 damage Effects 0.000 claims description 30
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 230000001590 oxidative effect Effects 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 239000004215 Carbon black (E152) Substances 0.000 claims description 24
- 229930195733 hydrocarbon Natural products 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 10
- 238000010494 dissociation reaction Methods 0.000 description 7
- 230000005593 dissociations Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】反応室と、反応室内部に設置された上部電極及び下部電極を含むプラズマCVD装置を使って、半導体基板上に薄膜を形成する方法は、下部電極上に半導体基板を載置する工程と、シリコン系炭化水素化合物の材料ガス、添加ガス、および不活性ガスから成る反応ガスを上部電極と下部電極との間に導入する工程と、上部電極と半導体基板との距離が半導体基板の中心付近の方が外周付近よりも短い状態で、上部電極または下部電極にRF電力を印加し、プラズマを生成する工程と、成膜速度を790nm/min未満に制御し、半導体基板上に低誘電率膜を成膜する工程と、から成る。
【選択図】図1
Description
で示される化合物のいずれかまたは任意の組み合わせを使うことができる。
以下、本発明の実施例を説明するが、本発明はこの実施例に制限されるものではない。各実施例の条件、および結果は以下の通りである。なお、装置は図1に示す装置を使い、凸型上部電極は図2に示すもの、凹型下部電極は図3に記載のものを使った。
被処理体:低誘電率シリコン絶縁膜
上部電極:平坦状態
下部電極:平坦状態(ウエハと全面接触)
DM-DMOS:200sccm
He:140sccm
イソプロピルアルコール:400sccm
O2:200sccm
圧力:800Pa
熱処理温度:380℃
成膜成長速度:800nm/min
誘電率:2.6
ハードネス:1.0GPa
モジュラス:6GPa
アンテナTEG歩留まり:60%
被処理体:低誘電率シリコン絶縁膜
上部電極:1mm凸型
下部電極:0.5mm凹型
DM-DMOS:200sccm
He:140sccm
イソプロピルアルコール:400sccm
O2:200sccm
圧力:800Pa
熱処理温度:380℃
成膜成長速度:790nm/min
誘電率:2.6
ハードネス:1.0GPa
モジュラス:6GPa
アンテナTEG歩留まり:80%
被処理体:低誘電率シリコン絶縁膜
上部電極:3.0mm凸型
下部電極:0.5mm凹型
DM-DMOS:200sccm
He:140sccm
イソプロピルアルコール:400sccm
O2:100sccm
圧力:600Pa
熱処理温度:380℃
誘電率:2.62
成膜成長速度:750 nm/min
ハードネス:1.1GPa
モジュラス:7GPa
アンテナTEG歩留まり:100%
被処理体:低誘電率シリコン絶縁膜
上部電極:1mm凸型
下部電極:0.5mm凹型
DM-DMOS:100sccm
He:140sccm
イソプロピルアルコール:400sccm
O2:100sccm
圧力:600Pa
熱処理温度:380℃
誘電率:2.62
成膜成長速度:450 nm/min
ハードネス:1.2GPa
モジュラス:8GPa
アンテナTEG歩留まり:100%
被処理体:低誘電率シリコン絶縁膜
上部電極:3mm凸型
下部電極:0.5mm凹型
DMOTMDS:250sccm
He:200sccm
イソプロピルアルコール:400sccm
O2:150sccm
熱処理温度:400℃
圧力:800Pa
成膜成長速度:900 nm/min
誘電率:2.5
ハードネス:1.0GPa
モジュラス:5.5GPa
アンテナTEG歩留まり:70%
被処理体:低誘電率シリコン絶縁膜
上部電極:6mm凸型
下部電極:0.5mm凹型
DMOTMDS:250sccm
He:200sccm
イソプロピルアルコール:400sccm
O2:150sccm
圧力:800Pa
熱処理温度:400℃
成膜成長速度:700 nm/min
誘電率:2.5
ハードネス:1.0GPa
モジュラス:5.5GPa
アンテナTEG歩留まり:100%
被処理体:低誘電率シリコン絶縁膜
上部電極:3mm凸型
下部電極:0.5mm凹型
DMOTMDS:125sccm
He:200sccm
イソプロピルアルコール:400sccm
O2:75sccm
圧力:600Pa
熱処理温度:400℃
成膜成長速度:640nm/min
誘電率:2.52
ハードネス:1.2GPa
モジュラス:8GPa
アンテナTEG歩留まり:100%
被処理体:低誘電率シリコン絶縁膜
上部電極:1.5mm凸型
下部電極:0.5mm凹型
DMOTMDS:63sccm
He:100sccm
イソプロピルアルコール:200sccm
O2:37sccm
圧力:600Pa
熱処理温度:400℃
成膜成長速度:450 nm/min
誘電率:2.51
ハードネス:1.1GPa
モジュラス:6GPa
アンテナTEG歩留まり:100%
Claims (25)
- 反応室と、前記反応室内部に設置された上部電極及び下部電極を含むプラズマCVD装置を使って、半導体基板上に薄膜を形成する方法であって、
前記下部電極上に前記半導体基板を載置する工程、
シリコン系炭化水素化合物の材料ガス、添加ガス、および不活性ガスから成る反応ガスを前記上部電極と前記下部電極との間に導入する工程、
前記上部電極と前記半導体基板との距離が前記半導体基板の中心付近の方が外周付近よりも短い状態で、前記上部電極または前記下部電極にRF電力を印加し、プラズマを生成する工程、
成膜速度を790nm/min未満に制御し、前記半導体基板上に低誘電率膜を成膜する工程、
から成る薄膜形成方法。 - 請求項1に記載の薄膜形成方法であって、前記半導体基板の中心付近と前記上部電極との間の距離は、前記半導体基板の外周付近と前記上部電極との間の距離の70%から99%である、ところの薄膜形成方法。
- 請求項2に記載の薄膜形成方法であって、前記上部電極の前記半導体基板に対向する面は凸状であり、凸量は0.5mmから6mmである、ところの薄膜形成方法。
- 請求項1に記載の薄膜形成方法であって、前記添加ガスは、水素/炭化水素添加ガス及び酸化性添加ガスからなる、ところの薄膜形成方法。
- 請求項4に記載の薄膜形成方法であって、前記水素/炭化水素添加ガスの流量は、前記材料ガスの流量と同量またはそれ以上である、ところの薄膜形成方法。
- 請求項5に記載の薄膜形成方法であって、前記水素/炭化水素添加ガスの流量は、前記材料ガスの流量の1.5倍以上である、ところの薄膜形成方法。
- 請求項4に記載の薄膜形成方法であって、前記酸化性ガスの流量は、前記材料ガスの流量と同量またはそれ以下である、ところの薄膜形成方法。
- 請求項4に記載の薄膜形成方法であって、反応ガスを導入する工程は、前記材料ガス、前記水素/炭化水素系添加ガス、前記酸化性添加ガス、および前記不活性ガスの流量をそれぞれA、B、C及びDとしたとき、流量比がA:B:C:D=0.25〜0.5:1〜0.5:0.25〜0.5:1となるように導入する工程から成る、ところの薄膜形成方法。
- 請求項8に記載の薄膜形成方法であって、前記材料ガスの流量は20sccmから350sccm、前記水素/炭化水素系添加ガスの流量は100sccmから900sccm、前記酸化性添加ガスの流量は25sccmから300sccm、前記不活性ガスの流量は30sccmから700sccmである、ところの薄膜形成方法。
- 請求項1に記載の薄膜形成方法であって、成膜されている前記低誘電率膜はプラズマダメージがなく、ハードネスが1.1GPa以上、モジュラスが6GPa以上である、ところの薄膜形成方法。
- 請求項1に記載の薄膜形成方法であって、前記下部電極表面は凹形状に加工処理されており、前記半導体基板の裏面の外周付近とのみ接触する、ところの薄膜形成方法。
- 請求項11に記載の薄膜形成方法であって、前記下部電極の凹量は0.5mmから2.0mmである、ところの薄膜形成方法。
- 請求項1に記載の薄膜形成方法であって、前記材料ガスは、
からなる群から選択される少なくとも一つのシリコン系炭化水素化合物である、ところの薄膜形成方法。 - 請求項4に記載の薄膜形成方法であって、前記水素/炭化水素系添加ガスは、CnH2n+2(nは1から5の整数)、CnH2n(nは1から5の整数)、CnH2n+2O(nは1から5の整数)のいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
- 請求項4に記載の薄膜形成方法であって、前記酸化性添加ガスは、O2、O3、CO2、H2Oのいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
- 請求項1に記載の薄膜形成方法であって、前記不活性ガスは、He、Ar、Kr、Xeのいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
- 反応室と、前記反応室内部に設置された上部電極及び下部電極を含むプラズマCVD装置を使って、半導体基板上に薄膜を形成する方法であって、
前記下部電極上に前記半導体基板を載置する工程、
シリコン系炭化水素化合物の材料ガス、添加ガス、および不活性ガスから成る反応ガスを前記上部電極と前記下部電極との間に導入する工程であって、それぞれの流量をA、B、C及びDとすると、流量比がA:B:C:D=0.25〜0.5:1〜0.5:0.25〜0.5:1となるように導入する工程、
前記上部電極または前記下部電極にRF電力を印加し、プラズマを生成する工程、
成膜速度を790nm/min未満に制御し、前記半導体基板上に低誘電率膜を成膜する工程、
から成る薄膜形成方法。 - 請求項17に記載の薄膜形成方法であって、前記材料ガスの流量Aは20sccmから350sccm、前記水素/炭化水素系添加ガスの流量Bは100sccmから900sccm、前記酸化性添加ガスの流量Cは25sccmから300sccm、前記不活性ガスの流量Dは30sccmから700sccmである、ところの薄膜形成方法。
- 請求項17に記載の薄膜形成方法であって、前記上部電極または前記下部電極にRF電力を印加する工程は、前記上部電極と前記半導体基板間の距離が前記半導体基板の中心付近の方が外周付近よりも短い状態において実行される、ところの薄膜形成方法。
- 請求項19に記載の薄膜形成方法であって、前記半導体基板の中心付近と前記上部電極との間の距離は、前記半導体基板の外周付近と前記上部電極との間の距離の70%から99%である、ところの薄膜形成方法。
- 請求項17に記載の薄膜形成方法であって、成膜されている前記低誘電率膜はプラズマダメージがなく、ハードネスが1.1GPa以上、モジュラスが6GPa以上である、ところの薄膜形成方法。
- 請求項17に記載の薄膜形成方法であって、前記材料ガスは、
よりなる群から選択される少なくとも一つのシリコン系炭化水素化合物である、ところの薄膜形成方法。 - 請求項17に記載の薄膜形成方法であって、前記水素/炭化水素系添加ガスは、CnH2n+2(nは1から5の整数)、CnH2n(nは1から5の整数)、CnH2n+2O(nは1から5の整数)のいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
- 請求項17に記載の薄膜形成方法であって、前記酸化性添加ガスは、O2、O3、CO2、H2Oのいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
- 請求項17に記載の薄膜形成方法であって、前記不活性ガスは、He、Ar、Kr、Xeのいずれか、またはこれらの組み合わせから選択される、ところの薄膜形成方法。
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