JP2006237409A - 発光ダイオード及びその製造方法 - Google Patents
発光ダイオード及びその製造方法 Download PDFInfo
- Publication number
- JP2006237409A JP2006237409A JP2005052167A JP2005052167A JP2006237409A JP 2006237409 A JP2006237409 A JP 2006237409A JP 2005052167 A JP2005052167 A JP 2005052167A JP 2005052167 A JP2005052167 A JP 2005052167A JP 2006237409 A JP2006237409 A JP 2006237409A
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- light emitting
- emitting diode
- chip
- current
- resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】基板上に発光ダイオードチップを搭載し、前記同一基板上に前記発光ダイオードチップと直列にまたは並列に接続する抵抗器を形成した発光ダイオードにおいて、発光ダイオードチップ101の発光輝度を受光装置111で検出して一定の輝度になるまでレーザー装置112のレーザー照射光113で前記電流制限抵抗102をトリミングする。
【選択図】図1
Description
図6は従来例のチップ型発光ダイオードの断面図であって、600はチップ型発光ダイオード、601は発光ダイオードチップ、622はチップ基板、623、624は電極、625は導電接着層、626は接続ワイヤ、627は樹脂モールド、628、629は半田電極であって、チップ基板622の電極623上に導電接着層625により発光ダイオードチップ601のカソード側を固着導通し、前記チップ基板622の電極624と発光ダイオードチップ601のアノード側を接続ワイヤで導通している。また、電極623と電極624は前記チップ基板622端の半田電極628、629と導通している。
I≒(V−VF)÷R
である。
本発明の目的は、チップ型発光ダイオードの輝度を前記チップ型発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく一定な輝度特性を有するチップ型発光ダイオードを製造する方法と、実装上も工数と使用部品点数削減ができるチップ型発光ダイオードを提供することにある。
101、601 発光ダイオードチップ
102、402、702、702a、702b、702c 電流制限抵抗
110 輝度調整装置
111 受光装置
112 レーザー装置
113 レーザー照射光
139 定電圧電源
222、522、622 チップ基板
400 電流調整抵抗付きチップ型発光ダイオード
439、839a、839b、839c 定電流電源
530、531 チップ基板522下面に形成した電極
600、601a、601b チップ型発光ダイオード
732 マザーボード
733、734、740 マザーボード配線
901 電圧計
Claims (3)
- 基板上に発光ダイオードチップを搭載し、前記同一基板上に前記発光ダイオードチップと直列に接続する抵抗器を形成した発光ダイオードにおいて、前記直列接続した発光ダイオードチップと前記抵抗器に定電圧を印加して前記発光ダイオードチップの輝度を一定の値になるように前記抵抗器をレーザートリミングで調整することを特徴とする発光ダイオード及びその製造方法。
- 基板上に発光ダイオードチップを搭載し、前記同一基板上に前記発光ダイオードチップと並列に接続する抵抗器を形成した発光ダイオードにおいて、前記並列接続した発光ダイオードチップと前記抵抗器に定電流を印加して前記発光ダイオードチップの輝度を一定の値になるように前記抵抗器をレーザートリミングで調整することを特徴とする発光ダイオード及びその製造方法。
- 基板上に発光ダイオードチップを搭載し、前記同一基板上の裏面に前記発光ダイオードチップと直列または並列接続する抵抗器を形成したことを特徴とする請求項1乃至2項のいずれか1項に記載の発光ダイオード。
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JP2005052167A JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
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JP2005052167A JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
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JP2006237409A true JP2006237409A (ja) | 2006-09-07 |
JP4863432B2 JP4863432B2 (ja) | 2012-01-25 |
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JP2005052167A Expired - Fee Related JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008091448A (ja) * | 2006-09-29 | 2008-04-17 | Mimaki Denshi Buhin Kk | 光源装置 |
WO2008105245A1 (ja) * | 2007-02-28 | 2008-09-04 | Koa Corporation | 発光部品およびその製造法 |
JP2008211133A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品の製造法および発光部品 |
JP2008211131A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品およびその製造法 |
JP2008211132A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品 |
JP2012033600A (ja) * | 2010-07-29 | 2012-02-16 | Nichia Chem Ind Ltd | 半導体発光素子用実装基板とその実装基板を用いた半導体発光装置 |
JP2012049385A (ja) * | 2010-08-27 | 2012-03-08 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置、照明装置、表示装置及び半導体発光素子の製造方法 |
JP2012109493A (ja) * | 2010-11-19 | 2012-06-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子測定装置 |
CN102540107A (zh) * | 2010-12-03 | 2012-07-04 | 三星Led株式会社 | 托架、使用该托架的测试设备和测试方法 |
JP2013048163A (ja) * | 2011-08-29 | 2013-03-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置及び半導体発光素子の製造方法 |
EP2903038A1 (en) * | 2014-02-04 | 2015-08-05 | Excelitas Technologies Philippines, Inc. | Light emitting diode output power control |
JP2020194731A (ja) * | 2019-05-29 | 2020-12-03 | Idec株式会社 | 発光装置及び発光装置の製造方法 |
Citations (9)
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JPS5429653A (en) * | 1977-08-10 | 1979-03-05 | Tomoegawa Paper Co Ltd | Heat sensitive recording medium |
JPS58209265A (ja) * | 1982-05-31 | 1983-12-06 | Olympus Optical Co Ltd | 発光ダイオ−ドアレイ装置 |
JPS5918454A (ja) * | 1982-07-22 | 1984-01-30 | Yuji Takayama | オンカラムキヤピラリクロマトグラフ用キヤリヤ−ガス制御装置 |
JPS60179057A (ja) * | 1984-02-28 | 1985-09-12 | 雪印乳業株式会社 | 腹腔鏡用受精卵移植三重針 |
JPS6413166A (en) * | 1987-07-07 | 1989-01-18 | Canon Kk | Image forming device |
JPH0267665A (ja) * | 1988-09-02 | 1990-03-07 | Fujitsu Ltd | インタフェイス回路 |
JP2004029370A (ja) * | 2002-06-26 | 2004-01-29 | Advanced Display Inc | 面状光源装置及びそれを用いた液晶表示装置 |
JP2004235477A (ja) * | 2003-01-30 | 2004-08-19 | Ckd Corp | Ledランプ及びledランプの製造方法 |
JP2004340930A (ja) * | 2003-04-21 | 2004-12-02 | Matsushita Electric Ind Co Ltd | 経路案内提示装置 |
-
2005
- 2005-02-28 JP JP2005052167A patent/JP4863432B2/ja not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429653A (en) * | 1977-08-10 | 1979-03-05 | Tomoegawa Paper Co Ltd | Heat sensitive recording medium |
JPS58209265A (ja) * | 1982-05-31 | 1983-12-06 | Olympus Optical Co Ltd | 発光ダイオ−ドアレイ装置 |
JPS5918454A (ja) * | 1982-07-22 | 1984-01-30 | Yuji Takayama | オンカラムキヤピラリクロマトグラフ用キヤリヤ−ガス制御装置 |
JPS60179057A (ja) * | 1984-02-28 | 1985-09-12 | 雪印乳業株式会社 | 腹腔鏡用受精卵移植三重針 |
JPS6413166A (en) * | 1987-07-07 | 1989-01-18 | Canon Kk | Image forming device |
JPH0267665A (ja) * | 1988-09-02 | 1990-03-07 | Fujitsu Ltd | インタフェイス回路 |
JP2004029370A (ja) * | 2002-06-26 | 2004-01-29 | Advanced Display Inc | 面状光源装置及びそれを用いた液晶表示装置 |
JP2004235477A (ja) * | 2003-01-30 | 2004-08-19 | Ckd Corp | Ledランプ及びledランプの製造方法 |
JP2004340930A (ja) * | 2003-04-21 | 2004-12-02 | Matsushita Electric Ind Co Ltd | 経路案内提示装置 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008091448A (ja) * | 2006-09-29 | 2008-04-17 | Mimaki Denshi Buhin Kk | 光源装置 |
US8405318B2 (en) | 2007-02-28 | 2013-03-26 | Koa Corporation | Light-emitting component and its manufacturing method |
WO2008105245A1 (ja) * | 2007-02-28 | 2008-09-04 | Koa Corporation | 発光部品およびその製造法 |
JP2008211133A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品の製造法および発光部品 |
JP2008211131A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品およびその製造法 |
JP2008211132A (ja) * | 2007-02-28 | 2008-09-11 | Koa Corp | 発光部品 |
JP2012033600A (ja) * | 2010-07-29 | 2012-02-16 | Nichia Chem Ind Ltd | 半導体発光素子用実装基板とその実装基板を用いた半導体発光装置 |
JP2012049385A (ja) * | 2010-08-27 | 2012-03-08 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置、照明装置、表示装置及び半導体発光素子の製造方法 |
JP2012109493A (ja) * | 2010-11-19 | 2012-06-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子測定装置 |
CN102569549A (zh) * | 2010-11-19 | 2012-07-11 | 星和电机株式会社 | 半导体发光元件测量装置 |
CN102540107A (zh) * | 2010-12-03 | 2012-07-04 | 三星Led株式会社 | 托架、使用该托架的测试设备和测试方法 |
JP2013048163A (ja) * | 2011-08-29 | 2013-03-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置及び半導体発光素子の製造方法 |
EP2903038A1 (en) * | 2014-02-04 | 2015-08-05 | Excelitas Technologies Philippines, Inc. | Light emitting diode output power control |
CN104968068A (zh) * | 2014-02-04 | 2015-10-07 | 埃塞力达技术菲律宾有限公司 | 发光二极管输出功率控制 |
US9273995B2 (en) | 2014-02-04 | 2016-03-01 | Excelitas Technologies Philippines, Inc. | Light emitting diode output power control |
CN104968068B (zh) * | 2014-02-04 | 2018-09-21 | 埃塞力达技术菲律宾有限公司 | 发光二极管输出功率控制 |
JP2020194731A (ja) * | 2019-05-29 | 2020-12-03 | Idec株式会社 | 発光装置及び発光装置の製造方法 |
JP7341603B2 (ja) | 2019-05-29 | 2023-09-11 | Idec株式会社 | 発光装置及び発光装置の製造方法 |
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