JP2006203209A - 均一な抵抗値を有する抵抗素子及びそれを用いた半導体素子 - Google Patents

均一な抵抗値を有する抵抗素子及びそれを用いた半導体素子 Download PDF

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Publication number
JP2006203209A
JP2006203209A JP2006011278A JP2006011278A JP2006203209A JP 2006203209 A JP2006203209 A JP 2006203209A JP 2006011278 A JP2006011278 A JP 2006011278A JP 2006011278 A JP2006011278 A JP 2006011278A JP 2006203209 A JP2006203209 A JP 2006203209A
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JP
Japan
Prior art keywords
resistance
resistance element
length
width
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006011278A
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English (en)
Japanese (ja)
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JP2006203209A5 (https=
Inventor
Chang-Houn Rhee
昌勳 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006203209A publication Critical patent/JP2006203209A/ja
Publication of JP2006203209A5 publication Critical patent/JP2006203209A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H01C13/02—Structural combinations of resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006011278A 2005-01-22 2006-01-19 均一な抵抗値を有する抵抗素子及びそれを用いた半導体素子 Pending JP2006203209A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050006101A KR100699833B1 (ko) 2005-01-22 2005-01-22 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자

Publications (2)

Publication Number Publication Date
JP2006203209A true JP2006203209A (ja) 2006-08-03
JP2006203209A5 JP2006203209A5 (https=) 2009-03-05

Family

ID=36696175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006011278A Pending JP2006203209A (ja) 2005-01-22 2006-01-19 均一な抵抗値を有する抵抗素子及びそれを用いた半導体素子

Country Status (3)

Country Link
US (1) US7551055B2 (https=)
JP (1) JP2006203209A (https=)
KR (1) KR100699833B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4337904B2 (ja) * 2007-04-12 2009-09-30 セイコーエプソン株式会社 集積回路装置および電子機器
IT1392556B1 (it) 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura
US20180102318A1 (en) * 2016-10-12 2018-04-12 Globalfoundries Inc. Compound resistor structure for semiconductor device
CN111489873B (zh) * 2020-04-17 2021-11-09 西安神电电器有限公司 直流输电工程用电阻器及组合、系统与阻值偏差消除方法
US12249603B2 (en) 2021-10-29 2025-03-11 Samsung Electronics Co., Ltd. Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373550A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置
JPH07211867A (ja) * 1994-01-24 1995-08-11 Fuji Electric Co Ltd 抵抗素子
JPH08330514A (ja) * 1995-05-29 1996-12-13 Matsushita Electric Works Ltd 半導体抵抗素子及びその製造方法
JPH0936310A (ja) * 1995-07-14 1997-02-07 Sony Corp 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154551A (ja) 1984-01-23 1985-08-14 Mitsubishi Electric Corp 半導体装置用抵抗体装置
JPS63273347A (ja) 1987-05-01 1988-11-10 Oki Electric Ind Co Ltd 抵抗器
JPH03166757A (ja) 1989-11-27 1991-07-18 Fujitsu Ltd 半導体装置
JP2658570B2 (ja) 1990-02-28 1997-09-30 株式会社デンソー 半導体装置及びその製造方法
JP3404064B2 (ja) 1993-03-09 2003-05-06 株式会社日立製作所 半導体装置及びその製造方法
CA2092370C (en) 1993-03-24 1997-03-18 John M. Boyd Forming resistors for integrated circuits
BE1007868A3 (nl) * 1993-12-10 1995-11-07 Koninkl Philips Electronics Nv Elektrische weerstand.
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
KR100194596B1 (ko) * 1995-11-08 1999-06-15 정선종 반도체 소자의 저항 제조방법
JP3890702B2 (ja) 1997-10-17 2007-03-07 ソニー株式会社 抵抗の製造方法および抵抗
KR20010054511A (ko) * 1999-12-07 2001-07-02 박종섭 반도체장치의 저항 및 그 제조방법
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373550A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置
JPH07211867A (ja) * 1994-01-24 1995-08-11 Fuji Electric Co Ltd 抵抗素子
JPH08330514A (ja) * 1995-05-29 1996-12-13 Matsushita Electric Works Ltd 半導体抵抗素子及びその製造方法
JPH0936310A (ja) * 1995-07-14 1997-02-07 Sony Corp 半導体装置

Also Published As

Publication number Publication date
US20060164202A1 (en) 2006-07-27
KR100699833B1 (ko) 2007-03-27
US7551055B2 (en) 2009-06-23
KR20060085122A (ko) 2006-07-26

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