KR100699833B1 - 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자 - Google Patents

균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자 Download PDF

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Publication number
KR100699833B1
KR100699833B1 KR1020050006101A KR20050006101A KR100699833B1 KR 100699833 B1 KR100699833 B1 KR 100699833B1 KR 1020050006101 A KR1020050006101 A KR 1020050006101A KR 20050006101 A KR20050006101 A KR 20050006101A KR 100699833 B1 KR100699833 B1 KR 100699833B1
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KR
South Korea
Prior art keywords
resistance
length
width
resistance element
temperature
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Expired - Fee Related
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KR1020050006101A
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English (en)
Korean (ko)
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KR20060085122A (ko
Inventor
이창훈
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삼성전자주식회사
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050006101A priority Critical patent/KR100699833B1/ko
Priority to US11/312,982 priority patent/US7551055B2/en
Priority to JP2006011278A priority patent/JP2006203209A/ja
Publication of KR20060085122A publication Critical patent/KR20060085122A/ko
Application granted granted Critical
Publication of KR100699833B1 publication Critical patent/KR100699833B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H01C13/02—Structural combinations of resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050006101A 2005-01-22 2005-01-22 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자 Expired - Fee Related KR100699833B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050006101A KR100699833B1 (ko) 2005-01-22 2005-01-22 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자
US11/312,982 US7551055B2 (en) 2005-01-22 2005-12-20 Resistor having uniform resistance and semiconductor device using the same
JP2006011278A JP2006203209A (ja) 2005-01-22 2006-01-19 均一な抵抗値を有する抵抗素子及びそれを用いた半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050006101A KR100699833B1 (ko) 2005-01-22 2005-01-22 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자

Publications (2)

Publication Number Publication Date
KR20060085122A KR20060085122A (ko) 2006-07-26
KR100699833B1 true KR100699833B1 (ko) 2007-03-27

Family

ID=36696175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050006101A Expired - Fee Related KR100699833B1 (ko) 2005-01-22 2005-01-22 균일한 저항값을 가진 저항소자 및 이를 이용한 반도체 소자

Country Status (3)

Country Link
US (1) US7551055B2 (https=)
JP (1) JP2006203209A (https=)
KR (1) KR100699833B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4337904B2 (ja) * 2007-04-12 2009-09-30 セイコーエプソン株式会社 集積回路装置および電子機器
IT1392556B1 (it) 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura
US20180102318A1 (en) * 2016-10-12 2018-04-12 Globalfoundries Inc. Compound resistor structure for semiconductor device
CN111489873B (zh) * 2020-04-17 2021-11-09 西安神电电器有限公司 直流输电工程用电阻器及组合、系统与阻值偏差消除方法
US12249603B2 (en) 2021-10-29 2025-03-11 Samsung Electronics Co., Ltd. Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121692A (ja) 1997-10-17 1999-04-30 Sony Corp 抵抗の製造方法
KR100194596B1 (ko) * 1995-11-08 1999-06-15 정선종 반도체 소자의 저항 제조방법
KR20010054511A (ko) * 1999-12-07 2001-07-02 박종섭 반도체장치의 저항 및 그 제조방법
KR100313412B1 (ko) 1993-03-24 2002-04-06 블레이어 에프.모리슨 집적회로용저항기의형성방법
KR100319021B1 (ko) 1993-03-09 2002-06-20 나시모토 류조 반도체장치및그제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154551A (ja) 1984-01-23 1985-08-14 Mitsubishi Electric Corp 半導体装置用抵抗体装置
JPS6373550A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置
JPS63273347A (ja) 1987-05-01 1988-11-10 Oki Electric Ind Co Ltd 抵抗器
JPH03166757A (ja) 1989-11-27 1991-07-18 Fujitsu Ltd 半導体装置
JP2658570B2 (ja) 1990-02-28 1997-09-30 株式会社デンソー 半導体装置及びその製造方法
BE1007868A3 (nl) * 1993-12-10 1995-11-07 Koninkl Philips Electronics Nv Elektrische weerstand.
JPH07211867A (ja) * 1994-01-24 1995-08-11 Fuji Electric Co Ltd 抵抗素子
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
JP3401994B2 (ja) * 1995-05-29 2003-04-28 松下電工株式会社 半導体抵抗素子及びその製造方法
JPH0936310A (ja) * 1995-07-14 1997-02-07 Sony Corp 半導体装置
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100319021B1 (ko) 1993-03-09 2002-06-20 나시모토 류조 반도체장치및그제조방법
KR100313412B1 (ko) 1993-03-24 2002-04-06 블레이어 에프.모리슨 집적회로용저항기의형성방법
KR100194596B1 (ko) * 1995-11-08 1999-06-15 정선종 반도체 소자의 저항 제조방법
JPH11121692A (ja) 1997-10-17 1999-04-30 Sony Corp 抵抗の製造方法
KR20010054511A (ko) * 1999-12-07 2001-07-02 박종섭 반도체장치의 저항 및 그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1001945960000 *

Also Published As

Publication number Publication date
US20060164202A1 (en) 2006-07-27
US7551055B2 (en) 2009-06-23
KR20060085122A (ko) 2006-07-26
JP2006203209A (ja) 2006-08-03

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